- B、Conference Papers (會議論文)
[2014]
- [B1] Y. S. Lin, and G. H. Li, "A W-Band Down-Conversion Mixer in 90 nm CMOS with Excellent Matching and Port-to-Port Isolation for Automotive Radars," 2014 Eleventh International Symposium on Wireless Communication Systems (ISWCS), Barcelona, Spain.
- [B2] Y. S. Lin, C. C. Wang, W. C. Wen, and T. M. Tsai, "A 12.1 mW 50~67 GHz Up-Conversion Mixer with 6 dB Conversion Gain and 30.7 dB LO-RF Isolation in 90 nm CMOS," 2014 IEEE Radio and Wireless Symposium, Newport Beach, California, USA.
- [B3] Y. S. Lin, C. C. Wang, and J. H. Lee, "A 9.96 mW 3.24±0.5 dB NF 1.9~22.5 GHz Wideband Low-Noise Amplifier Using 90 nm CMOS Technology," 2014 IEEE Radio and Wireless Symposium, Newport Beach, California, USA.
- [B4] Y. S. Lin, G. L. Lee, C. C. Wang, and C. C. Chen, "A 21.1 mW 6.2 dB NF 77~81 GHz CMOS Low-Noise Amplifier with 13.5±0.5 dB S21 and Excellent Input and Output Matching for Automotive Radars," 2014 IEEE Radio and Wireless Symposium, Newport Beach, California, USA.
- [B5] Y. S. Lin, C. Y. Lee, C. C. Wang, and C. C. Chen, "A 10 mW 8.1 dB NF 77~81 GHz CMOS Low-Noise Amplifier with 11.3±0.5 dB S21 and Excellent Input and Output Matching for Automotive Radars," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-04, Hsinchu, Taiwan.
- [B6] G. H. Li, Y. S. Lin, and C. C. Chen, "A 79 GHz Down-Conversion Mixer with Negative Resistance Compensation in 90 nm CMOS," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-08, Hsinchu, Taiwan.
- [B7] L. C. Liu, and Y. S. Lin, "Design and Implementation of a High-Performance W-Band Up-Conversion Mixer in 90 nm CMOS," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-09, Hsinchu, Taiwan.
- [B8] Y. S. Lin, F. C. Liu, W. C. Wen, and C. C. Wang, "Design and Implementation of Squared W-Band CMOS Marchand Balun for W-Band Communication Systems," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-10, Hsinchu, Taiwan.
- [B9] B. H. Liu, Y. S. Lin, and C. C. Wang, "Design of Sigma-Delta DAC for Intra-Body Communication (IBC) Platform Application," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-11, Hsinchu, Taiwan.
- [B10] K. L. Lin, and Y. S. Lin, "Filterless Class-D Audio Power Amplifier (PA) with Multi-Level Converter for Implementation of Intra-Body Communication (IBC) Hub/Alarm Unit in IBC Platform for Fall Prevention System," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-13, Hsinchu, Taiwan.
- [B11] R. C. Liu, Y. S. Lin, W. C. Wen, and C. C. Wang, "Design and Implementation of a High-Performance 79 GHz Up-Conversion Mixer in 90 nm CMOS," 2013 National Symposium on Telecommunications, E4-3, Tainan, Taiwan.
- [B12] Y. S. Lin, C. C. Wang, Y. C. Liao, and S. S. Lu, "BFSK Receiver, and Audio DAC and PA in Hub/Alarm Unit of Intra-Body Communication (IBC) Platform for Fall Prevention System," The 12th International Conference on Automation Technology, pp. 131-138, Tainan, Taiwan.
- [B13] J. F. Chang, Y. S. Lin, and C. C. Wang, "A High-Voltage Driving 60 GHz Power Amplifier with Psat of 13 dBm and PAE of 9.1% in 90 nm CMOS for IEEE 802.11ad Communication Systems," 2013 IEEE International Symposium on Electromagnetic Compatibility, Denver, Colorado, USA.
- [B14] C. C. Wang, T. M. Tsai, Y. S. Lin, and W. C. Wen, " A Low Power and High Conversion Gain 60-GHz CMOS Up-Conversion Mixer Using Current Injection and Dual Negative Resistance Compensation Techniques," 2013 IEEE International Symposium on Electromagnetic Compatibility, Denver, Colorado, USA.
- [B15] C. C. Wang, Y. S. Lin, and J. H. Lee, "60 GHz CMOS Down-Conversion Mixer with 15.46 dB Gain and 64.7 dB LO-RF Isolation," 2013 IEEE International Symposium on Antennas and Propagation and USNC-URSI National Radio Science Meeting, Orlando, Florida, USA.
- [B16] J. H. Lee, and Y. S. Lin, "A 3.88-dB NF 60-GHz CMOS UWB LNA with 14.1-mW DC Power Consumption," 2013 IEEE International Symposium on Antennas and Propagation and USNC-URSI National Radio Science Meeting, Orlando, Florida, USA.
- [B17] P. Y. Yin, Y. H. Chen, C. W. Lu, S. S. Shyu, C. L. Lee, T. C. Ou, and Y. S. Lin, "A Multi-Stage Fault-Tolerant Multiplier with Triple Module Redundancy (TMR) Technique," IEEE Fourth International Conference on Intelligent Systems, Modelling and Simulation (ISMS), Bangkok, Thailand.
- [B18] P. Y. Yin, C. W. Lu, C. Y. Hsu, and Y. S. Lin, "An 11-bit Two-Stage Hybrid-DAC for TFT LCD Column Drivers," IEEE Fourth International Conference on Intelligent Systems, Modelling and Simulation (ISMS), Bangkok, Thailand.
- [B19] Y. S. Lin, and C. C. Wang, "A 24-GHz Power Amplifier with Psat of 15.9 dBm and PAE of 14.6% Using Standard 0.18 μm CMOS Technology," Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT), HF-01, Hsinchu, Taiwan.
- [B20] J. N. Chang, Y. S. Lin, and C. C. Wang, "A High-Performance CMOS Power Amplifier for 60 GHz Short-Range Communication Systems," Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT), HF-02, Hsinchu, Taiwan.
- [B21] C. H. Wu, Y. S. Lin, and C. C. Wang, "A 3.1~10.6 GHz Current-Reused CMOS Ultra-Wideband Low-Noise Amplifier Using Self-Forward Body Bias and Forward Combining Techniques," Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT), HF-03, Hsinchu, Taiwan.
- [B22] Y. H. Wang, C. C. Wang, and Y. S. Lin, "A 3.1-10.6 GHz CMOS Wide Band LNA Using Standard 0.18 μm CMOS Technology," Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT), HF-04, Hsinchu, Taiwan.
- [B23] C. H. Wu, Y. S. Lin, J. H. Lee, C. C. Wang, "A 2.87±0.19 dB NF 3.1-10.6 GHz Ultra-Wideband Low-Noise Amplifier Using 0.18 m CMOS Technology," 2012 IEEE Radio and Wireless Symposium, Santa Clara, California, USA, pp. 227-230.
- [B24] J. F. Chang, Y. S. Lin, J. H. Lee, C. C. Wang, "A Low-Power 3.2-9.7 GHz Ultra-Wideband Low Noise Amplifier with Excellent Stop-Band Rejection Using 0.18 mm CMOS Technology," 2012 IEEE Radio and Wireless Symposium, Santa Clara, California, USA, pp. 199-202.
- [B25] J. H. Lee, T. M. Tsai, and Y. S. Lin, "15.1 mW 60 GHz Up-Conversion Mixer with 4.5 dB Gain and 57.5 dB LO-RF Isolation," 2012 National Symposium Telecommunications, Section S1-5, paper 1142, Changhua, Taiwan.
- [B26] J. H. Lee, Y. C. Chen, Y. S. Lin, and S. S. Lu, "A 21-27 GHz CMOS Receiver Front-End with a Novel Double-Balanced Mixer and Integrated Balun for Automotive Radar Systems," Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT), HF-02, Hsinchu, Taiwan.
- [B27] C. C. Wang, Y. S. Lin, and P. W. Yu, "A 28/56 GHz Dual-Band CMOS VCO Using Reversely Tunable LC Source-Degeneration and the Push-Push Technique," Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT), HF-02, Hsinchu, Taiwan.
- [B28] J. H. Lee, J. F. Chang, and Y. S. Lin, "A 3.15 dB NF, 7.2 mW 3~9 GHz Ultra-Wideband Receiver Front-End for UWB Systems Using 0.18 mm CMOS Technology," Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT), HF-02, Hsinchu, Taiwan.
- [B29] C. C. Wang, Y. S. Lin, and P. W. Yu, "A Miniature and Low-Power 24 GHz CMOS VCO Using Tunable LC Source-Degeneration and Transformer Feedback Techniques for Automotive Radars," Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT), HF-02, Hsinchu, Taiwan.
- [B30] C. C Wang, C. Y. Lin, C. H. Cheng, and Y. S. Lin, "1-dB Insertion-Loss 1~14.3 GHz Ultra-Wideband Bandpass Filter Using Standard 0.18-mm CMOS Technology," 2011 International Conference on Electrical and Control Engineering, Yichang, China, pp. 1-4.
- [B31] S. L. Huang, Y. S. Lin, and J. H. Lee, "A Low-Power and Low-Noise 21~29 GHz Ultra-Wideband Receiver Front-End in 0.18 m CMOS Technology," 2011 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, pp. 1-4.
- [B32] J. F. Chang, and Y. S. Lin, "A DC-10.5-GHz CMOS Distributed Amplifier with 3.2±0.3 dB NF, 10.5±1.4 dB Gain and ±13.8 ps Group Delay Variation," to appear in Proceedings of 2011 IEEE Radio and Wireless Symposium (2011 IEEE RWS), Phoenix, Arizona, USA, pp. 307-310.
- [B33] J. F. Chang, and Y. S. Lin, "2.76 mW, 3-10 GHz Ultra-Wideband LNA Using 0.18 μm CMOS Technology," Proceedings of 2011 IEEE VLSI Design, Automation and Test (2011 VLSI DAT), Hsin-Chu, Taiwan, pp. 188-191.
- [B34] C. Z. Wang, C. C. Wang, Y. S. Lin, and G. W. Huang, "A 2.28 mW 80.8 GHz CMOS Divide-by-4 DILFD with 18.24% Locking Range Using Tunable LC Source-Degeneration," Proceedings of 2011 IEEE VLSI Design, Automation and Test (2011 VLSI DAT), Hsin-Chu, Taiwan, pp. 307-310.
- [B35] C. C. Chen, Y. S. Lin, J. H. Lee, and J. F. Chang, "A V-band CMOS Sub-Harmonic Mixer with Integrated Frequency Doubler and 180o Out-of-Phase Splitter," Proceedings of 2011 IEEE VLSI Design, Automation and Test (2011 VLSI DAT), Hsin-Chu, Taiwan, pp. 192-195.
- [B36] J. F. Chang, and Y. S. Lin, "A 0.99 mW 3-10 GHz CG CMOS UWB LNA Using T-match Input Network and Self-Body-Bias Technique," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-02, Hsinchu, Taiwan.
- [B37] C. C. Wang, C. Z. Chen, and Y. S. Lin, "A 3.55 mW 80 GHz CMOS Direct Injection-Locked Frequency Divider with 26.3% Locking Range Using Distributed LC Tank and Body Bias Techniques," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-04, Hsinchu, Taiwan.
- [B38] J. F. Chang, and Y. S. Lin, "A 3.9 dB NF, 24.5 dB Gain 0.3~10.5 GHz Distributed Amplifier Using Dual-Inductive-Peaking Cascade Gain Cell for UWB Systems in 0.18 mm CMOS," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-05, Hsinchu, Taiwan.
- [B39] T. E. Hsu, Y. S. Lin, and S. L. Huang, "A Low-Power and High-Gain K-Band Receiver Front-End in 0.18 mm RF CMOS Technology," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-10, Hsinchu, Taiwan.
- [B40] C. C. Wang, C. Z. Chen, and Y. S. Lin, "A Wide-Locking-Range Divide-by-3 Injection-Locked Frequency Divider Using Differential-Injection Linear Mixers and Dual Frequency-Tuning," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-13, Hsinchu, Taiwan.
- [B41] Y. C. Chen, C. H. Wang, and Y. S. Lin, "Design and Implementation of Front-End for 24 GHz Adaptive Cruise Control Radar System Application," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-18, Hsinchu, Taiwan.
- [B42] T. Y. Kuo, and Y. S. Lin, "UHF 915 MHz OOK Demodulator for RFID Transponder Applications," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-26, Hsinchu, Taiwan.
- [B43] Y. H. Chen, Y. R. Chen, J. C. Liu, J. W. Lin, K. H. Hung, C. Y. Hsu, Y. S. Lin, "Enhancement Performance of Amorphous SiGe Single Junction Solar Cells by Post-deposition Thermal Annealing to Overcome S-curve Character," TACT 2011 International Thin Films Conference, Nov. 20-23, Kenting, Taiwan.
- [B44] C. C. Chen, Y. S. Lin, P. L. Huang, J. F. Chang, and S. S. Lu, "A 4.9-dB NF 53.5-62-GHz Micro-machined CMOS Wideband LNA with Small Group-Delay-Variation," Proceedings of 2010 IEEE International Microwave Symposium (2010 IEEE IMS), Anaheim, California, USA, pp. 489-492.
- [B45] C. C. Chen, J. H. Lee, and Y. S. Lin, "A 60 GHz CMOS Receiver Front-End with Integrated 180o Out-of-Phase Wilkinson Power Divider," Proceedings of 2010 IEEE Radio Frequency Integrated Circuits Symposium (2010 IEEE RFIC Symposium), Anaheim, California, USA, pp. 373-376.
- [B46] Y. T. Chiu, Y. S. Lin, and J. F. Chang, "A 18.85 mW 20-29 GHz Wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB Gain," Proceedings of 2010 IEEE Radio Frequency Integrated Circuits Symposium (2010 IEEE RFIC Symposium), Anaheim, California, USA, pp. 381-384.
- [B47] J. G. Chen, C. C. Chen, and Y. S. Lin, "An OOK Transmitter for Bio-Sensor WSN Application," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), pp. 76, Hsinchu, Taiwan.
- [B48] C. C. Chen, Y. S. Lin, and G. W. Huang, "A Low Power and High Gain 21 GHz Receiver Front-End in 0.18 mm RF CMOS Technology," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), pp. 78, Hsinchu, Taiwan.
- [B49] C. Z. Chen, W. L. Hsu, Y. S. Lin, and G. W. Huang, "Q-Band Divide-by-3 Direct Injection-Locked Frequency Divider in CMOS 0.13-mm Technology," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-08, Hsinchu, Taiwan.
- [B50] C. Z. Chen, C. C. Wang, Y. S. Lin, and G. W. Huang, "1 V Ka-Band Low-Power and Wide-Locking Range CMOS Divide-by-4 Direct Injection- Locked Frequency Dividers," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-16, Hsinchu, Taiwan.
- [B51] S. L. Hwang, C. C. Chen, Y. S. Lin, and G. W. Hwang, "A 21-29 GHz CMOS Wideband LNA with 3.2-4.5 dB Noise Figure Using Standard 0.13 mm Technology," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-02, Hsinchu, Taiwan.
- [B52] C. C. Wang, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A Ka-Band Low-Voltage and Wide-Locking Range CMOS Divide-by-4 Direct Injection-Locked Frequency Dividers in CMOS 0.18-mm Technology," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), pp. 41, Hsinchu, Taiwan.
- [B53] C. H. Wang, Y. T. Chiu, and Y. S. Lin, "A 3.2 dB NF 21-29 GHz Wideband LNA Using Current-Reuse technique," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-03, Hsinchu, Taiwan.
- [B54] C. H. Wang, H. Y. Yang, C. C. Chen, and Y. S. Lin, "Application of RF Receiver Front-End for 24 GHz Short-Range Radar System," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-17, Hsinchu, Taiwan.
- [B55] W. L. Hsu, C. Z. Chen, Y. S. Lin, and C. C. Chen, "A 2 mW, 55.8-GHz CMOS Injection-Locked Frequency Divider with 7.1-GHz Locking Range," Proceedings of 2009 IEEE Radio and Wireless Symposium (2009 IEEE RWS), San Diego, California, USA, pp. 582-585.
- [B56] C. C. Chen, H. Y. Yang, and Y. S. Lin, "A 21-27 GHz CMOS Wideband LNA with 9.3±1.3 dB Gain and 103.9±8.1 ps Group-Delay Using Standard 0.18 μm CMOS Technology," Proceedings of 2009 IEEE Radio and Wireless Symposium (2009 IEEE RWS), San Diego, California, USA, pp. 586-589.
- [B57] Y. S. Lin, T. H. Chang, C. Z. Chen, C. C. Chen, H. Y. Yang, and S. S. Wong, "Low-Power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz Dual-Conversion Receiver," Proceedings of 2009 IEEE VLSI Design, Automation and Test (2009 VLSI DAT), Hsin-Chu, Taiwan, pp. 88-91.
- [B58] C. W. Tsou, C. C. Chen, and Y. S. Lin, "A 57-GHz CMOS VCO with 56% Tuning-Range Enhancement Using Tunable Capacitive Source- Degeneration Technique," Proceedings of 2009 IEEE VLSI Design, Automation and Test (2009 VLSI DAT), Hsin-Chu, Taiwan, pp. 146-149.
- [B59] M. C. Lu, J. F. Chang, L. C. Lu, and Y. S. Lin, "Miniature 60-GHz-Band Bandpass Filter with 2.55-dB Insertion-Loss Using Standard 0.13 mm CMOS Technology," Proceedings of 2009 IEEE VLSI Design, Automation and Test (2009 VLSI DAT), Hsin-Chu, Taiwan, pp. 92-95.
- [B60] J. F. Chang, Y. S. Lin, P. L. Huang, and S. S. Lu, "A Micromachined V-Band CMOS Bandpass Filter with 2-dB Insertion-Loss Department," Proceedings of 2009 IEEE Electronic Components and Technology Conference (2009 IEEE ECTC), San Diego, California, USA, pp. 1590-1593.
- [B61] W. L. Hsu, C. Z. Chen, Y. S. Lin, and J. F. Chang, "A 9.3-GHz-Tuning-Range, 58-GHz CMOS Direct Injection-Locked Frequency Divider Using Input-Power-Matching Technique," Proceedings of 2009 IEEE Electronic Components and Technology Conference (2009 IEEE ECTC), San Diego, California, USA, pp. 1846-1849.
- [B62] M. C. Lu, J. F. Chang, L. C. Lu, and Y. S. Lin, "1.75-dB Insertion-Loss UWB BP-Filter with Finite Transmission Zeros Using Standard 0.18 μm CMOS Technology," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B63] Y. T. Chiu, J. F. Chang, and Y. S. Lin, "X-Band Low Noise Amplifier using 0.18 μm CMOS Technology," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B64] C. Z. Chen, T. Y. Chen, Y. S. Lin, and G. W. Huang, "A Low-Power Excellent Sensitivity 64.76 GHz CMOS Injection-Locked Frequency Divider Using Shunt-Peaking Technique," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B65] A. C. Hsu, C. C. Chen, and Y. S. Lin, "A 24 GHz Down Conversion Mixer Using 0.18 mm CMOS Technology," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B66] C. W. Tsou, C. C. Chen, and Y. S. Lin, "An Ultra Wideband Double-Balanced Mixer in 0.13 mm RF CMOS Technology," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B67] H. C. Chung, C. C. Chen, and Y. S. Lin, "0.18 m CMOS UWB LNA with high gain and 3.5-4.7 dB noise figure", Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B68] J. F. Chang, Y. S. Lin, C. C. Chen, C. Z. Chen, T. Wang, and S. S. Lu, "A Miniature Micro-machined Millimeter-wave Bandpass Filter By CMOS Compatible ICP Deep-Trench Technology," Proceedings of 2008 IEEE Radio and Wireless Symposium (2008 IEEE RWS), Orlando, Florida, USA, pp. 399-402.
- [B69] A. Chen, H. B. Liang, Y. Baeyens, Y. K. Chen, and Y. S. Lin, "A Broadband Millimeter-Wave Low-Noise Amplifier in SiGe BiCMOS," Proceedings of 2008 IEEE Si Monolithic Integrated Circuits in RF Systems, Orlando, Florida, USA, pp. 86-89.
- [B70] J. H. Lee, C. C. Chen, H. Y. Yang, and Y. S. Lin, "A 2.5-dB NF 3.1-10.6-GHz CMOS UWB LNA with Small Group-Delay-Variation," Proceedings of 2008 IEEE Radio Frequency Integrated Circuits Symposium (2008 IEEE RFIC Symposium), Atlanta, Georgia, USA., 501-504.
- [B71] A. Chen, H. B. Liang, Y. Baeyens, J. Lin, Y. K. Chen, and Y. S. Lin, "Wideband Mixed Lumped-distributed-element 90° and 180° Power Splitters on Silicon Substrate for Millimeter-wave Applications," Proceedings of 2008 IEEE Radio Frequency Integrated Circuits Symposium (2008 IEEE RFIC Symposium), Atlanta, Georgia, USA, pp. 449-452.
- [B72] H. Y. Yang, Y. S. Lin, C. C. Chen, and S. S. Wong, "A Low-Power V-Band CMOS Low-Noise Amplifier Using Current-Sharing Technique," Proceedings of 2008 IEEE International Symposium on Circuits and Systems (2008 IEEE ISCAS), Seattle, Washington, USA, pp. 964-967.
- [B73] P. K. Tsai, T. H. Huang, and Y. S. Lin, "Integration of CMOS VCO and frequency divider for ku-band low-power frequency synthesizer," 3rd International Conf. on Innovative Computing, Information and Control (ICICIC2008), Dalian, China, Jun. 2008, pp. 235-238.
- [B74] C. C. Hsiao, C. Z. Chen, and Y. S. Lin, "A Low-Power CDR for Wireless Sensor Network Applications", Proceedings of 2008 RFID Conference, Taipei, Taiwan.
- [B75] C. C. Chen, Y. H. Chou, Y. S. Lin, and J. G. Chen, "A CMOS OOK Transceiver for RFID Applications", Proceedings of 2008 RFID Conference, Taipei, Taiwan.
- [B76] W. L. Hsu, C. Z. Chen, and Y. S. Lin, "A Ka-band Injection-Locked Frequency Divider Using Shunt-Peaking Technique," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B77] F. C. Chang, C. Z. Chen, and Y. S. Lin, "Ka band Wide Locked Range Frequency Divider," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B78] C. C. Hsiao, C. Z. Chen, and Y. S. Lin, "A Low Data Rate CDR for bio-sensor receiver application," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B79] T. H. Chang, C. Z. Chen, and Y. S. Lin, "On the use of inversion-mode MOS Varactors for Ka band VCO," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B80] J. H. Lee, C. C. Chen, Y. S. Lin, T. Wang, and S. S. Lu, "A 5.8GHz Fully Integrated Low-Phase-Noise CMOS VCO," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B81] J. H. Lee, C. C. Chen, and Y. S. Lin, "A High-Performance Wideband CMOS Low-Noise Amplifier Using Inductive Series and Parallel Peaking Techniques," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B82] C. C. Chen, Y. S. Lin, J. F. Chang, and J. H. Lee, "A K-Band Low-Noise Amplifier Using Shunt RC-Feedback and Series Inductive-Peaking Techniques," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B83] P. K. Tsai, T. H. Huang, and Y. S. Lin, "Integration of CMOS VCO and Frequency Divider for Ku-band Low-Power Frequency Synthesizer," The Third International Conference on Innovative Computing, Information and Control, Dalian, China.
- [B84] C. Z. Chen, J. H. Lee, C. C. Chen, and Y. S. Lin, "An Excellent Phase-Linearity 3.1-10.6 GHz CMOS UWB LNA Using Standard 0.18 mm CMOS Technology," Proceedings of 2008 IEEE Asia-Pacific Microwave Conference, Bangkok, Thailand, pp. 1-4.
- [B85] J. F. Chang, Y. S. Lin, C. Z. Chen, C. C. Chen, P. F. Yeh, P. L. Huang, T. Wang, and S. S. Lu, "Ultra-Low-Loss and Broadband Micromachined Inductors and Transformers for 30-100 GHz CMOS RFIC Applications by CMOS-Compatible ICP Deep Trench Technology," Proceedings of 2007 IEEE Radio and Wireless Symposium (2007 IEEE RWS), Long Beach, California, USA, pp. 225-228.
- [B86] Y. S. Lin, C. C. Chen, C. Z. Chen, and P. F. Yeh, "High-Coupling and Ultra-Low-Loss Interlaced Stacked Transformers for 60-100 GHz CMOS RFIC Applications," Proceedings of 2007 IEEE Radio and Wireless Symposium (2007 IEEE RWS), Long Beach, California, USA, pp. 357-360.
- [B87] Y. H. Tsou, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A CPGS Inductor for RFIC Applications," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B88] H. Y. Fang, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A 5GHz Fully Integrated Low Power CMOS VCO," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B89] Y. C. Lin, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A study of Intra-Body Signal Transmission For Instantaneous Health-Monitor-System Applications," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B90] P. K. Tsai, C. Z. Chen, Y. S. Lin, and G. W. Huang, "Ku-band Voltage-Controlled Oscillator and Injection-Locked Frequency Divider for Frequency Synthesizer Application," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B91] J. H. Lee, C. C. Chen, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A 3.1-10.6-GHz Ultra-Wideband CMOS Low-Noise Amplifier Utilizing Inductive Series And Shunt Peaking Techniques," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B92] S. H. Yen Y. S. Lin, and C. C. Chen, "A Ka-Band Low Noise Amplifier Using Standard 0.18 mm CMOS Technology for Ka-Bnad Communication System Applications," Proceedings of 2006 IEEE Asia-Pacific Microwave Conference (2006 IEEE APMC), Yokohama, Japan, pp. 317-319.
- [B93] Y. S. Lin, C. C. Chen, H. B. Liang, T. Wang, and S. S. Lu, "An Ultra-Low-Loss Micromachined RF Monolithic Transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC Applications," Proceedings of 2006 IEEE Asia-Pacific Microwave Conference (2006 IEEE APMC), Yokohama, Japan, pp. 1421-1424.
- [B94] Y. S. Lin, C. C. Chen, H. B. Liang, T. Wang, and S. S. Lu, "High-Quality-Factor and Low-Power-Loss Micromachined RF Bifilar Transformer for UWB RFIC Applications," Proceedings of 2006 International Solid-State Devices and Materials Conference (2006 SSDM), Yokohama, Japan, pp. 798-799.
- [B95] Y. S. Lin, C. C. Chen, Y. R. Tzeng, and H. B. Liang , "An Analysis of Layout and Temperature Effects on Magnetic-Coupling Factor, Resistive- Coupling Factor, and Power Gain Performances of RF Transformers for RFIC Applications," Proceedings of 2006 International Solid-State Devices and Materials Conference (2006 SSDM), Yokohama, Japan, pp. 522-523.
- [B96] Y. S. Lin, Z. H. Yang, C. C. Chen, and T. C. Chao, "Design and Implementation of a Miniaturized +8 dBm IIP3 3-5 GHz UWB CMOS LNA," Proceedings of 2007 National Communication Conference, Kaohsiung county, Taiwan, pp.127.
- [B97] Y. S. Lin, C. C. Chen, H. B. Liang, and M. S. Huang, "Analyses and Wideband Modeling (DC-to- 50GHz) of Various Dummy Devices For Accurate RF Devices and ICs De-embedding Applications," Proceedings of 2007 National Communication Conference, Kaohsiung county, Taiwan, pp.261.
- [B98] H. B. Liang, Y. S. Lin, C. C. Chen, and J. H. Lee, "Optimization of PGS Pattern of Transformers/Inductors in Standard RF BiCMOS Technology for RFIC Applications," Proceedings of 2006 IEEE Radio Frequency Integrated Circuits Symposium (2006 IEEE RFIC Symposium), San Francisco, USA, pp. 11-14.
- [B99] Y. S. Lin, H. B. Liang, T. Wang, and S. S. Lu, "An Analysis of Perfect-Magnetic-Coupling Ultra-Low-Loss Micromachined SMIS RF Transformers for RFIC Applications," Proceedings of 2006 IEEE Radio and Wireless Symposium (2006 IEEE RWS), pp. 55-58, San Diego, USA.
- [B100] Y. S. Lin, and S. C. Chen, and S. B. Chang, "Analysis and Design of LNA and VCO With Transformer Feedback Loop," Proceedings of 2006 IEEE International Symposium on VLSI Design, Automation, and Test (VLSI-DAT), Hsin-chu, Taiwan, pp. 299-300.
- [B101] S. H. Yen, and Y. S. Lin, "Design and Implementation of a DC-to-17-GHz UWB SiGe LNA with a Peaking Inductor," Proceedings of 2006 IEEE International Symposium on VLSI Design, Automation, and Test (VLSI-DAT), Hsin-chu, Taiwan, pp. 87-88.
- [B102] W. S. Liao, Y. S. Lin, T. C. Chao, C. H. Chen, and S. S. Lu, "A 1-to-12 GHz Distributed Amplifier Designed by Micromachined Inductors," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), p. 119, Hsin-chu, Taiwan.
- [B103] S. H. Yen, Y. S. Lin, and G. W. Huang, "An Ultra-Wideband (3.1 – 10.6 GHz) Matched SiGe LNA Using Multiple Feedback-Loops, Transistor’s Intrinsic Base-Collector Capacitor, and Inductive Peaking Technique," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 114, Hsin-chu, Taiwan.
- [B104] Z. H. Yang, Y. S. Lin, and Y. R. Tzeng, "A low-power 0.18 mm CMOS LNA for Ultra- Wideband Frontends," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 119, Hsin-chu,Taiwan.
- [B105] Z. H. Yang, Y. S. Lin, and Y. R. Tzeng, "Design and Implementation of a 3-5 GHz UWB CMOS LNA," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 118, Hsin-chu, Taiwan.
- [B106] P. F. Yeh, Y. S. Lin, and G. W. Huang, "Single-turn Multiple-layer Interlaced Stacked (SMIS) Transformer for Millimeter Wave Application," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 117, Hsin-chu, Taiwan.
- [B107] P. F. Yeh, and Y. S. Lin, "A Wide Variable Inductance Inductor for 2-4 GHz VCO Applications," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 117, Hsin-chu, Taiwan.
- [B108] M. H. Huang, and Y. S. Lin, "A 3-5 GHz CMOS Ultra-Wideband Low-Noise Amplifier Using Inductive Peaking Technique," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 115, Hsin-chu, Taiwan.
- [B109] J. F. Chang, and Y. S. Lin, "Miniaturized Inductors for Millimeter Wave Applications," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 120, Hsin-chu, Taiwan.
- [B110] M. H. Huang, and Y. S. Lin, "An Analysis of High-Coupling Factor Interlaced-Stacked Transformers with Various Turn Ratio for RFIC Applications," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 116, Hsin-chu, Taiwan.
- [B111] S. B. Chang, Y. S. Lin, and G. W. Huang, "Study of achievable optimized performance of variable inductance inductor with cantilever-beam," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 56, Hsin-chu, Taiwan.
- [B112] Y. S. Lin, H. B. Liang, and Y. R. Tzeng, "Implementation of Perfect-Magnetic-Coupling Ultra-Low-Loss Transformer in Standard RFCMOS Technology," Proceedings of 2005 IEEE Electron Device and Solid-State Circuits (2005 EDSSC), pp. 435-438, Hong-Kong, China.
- [B113] Y. S. Lin, H. B. Liang, H. W. Chiu, K. Liu, H. H. Wu, S. S. Lu, and M. S. Lin, "Wideband Modeling of Temperature and Substrate Effects in RF Inductors on Silicon for 3.1-10.6 GHz UWB System Applications," Proceedings of 2005 IEEE Electron Device and Solid-State Circuits (2005 EDSSC), pp. 47-50, Hong-Kong, China.
- [B114] Y. S. Lin, H. B. Liang, J. L. Chen, K. H. Chen, and S. S. Lu, "Variable Inductance Planar Spiral Inductors and CMOS Wideband Amplifiers with Inductive Peaking," Proceedings of 2005 IEEE Electron Device and Solid-State Circuits (2005 EDSSC), pp. 63-66, Hong-Kong, China.
- [B115] Y. R. Tzeng, Y. S. Lin, and H. B. Liang, "Characterization and Modeling of High-Coupling- Factor Low-Loss Stacked 3-D Transformers," Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS), pp. 44, Kaohsiung, Taiwan.
- [B116] Y. S. Lin, C. C. Chen, and H. B. Liang, "Temperature and Size Effects on the Performances of RF S-Parameters, and Noise and Power Parameters of GaInP-GaAs HBTs for 3.1-10.6 GHz UWB Applications," Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS), pp. 58, Kaohsiung, Taiwan.
- [B117] S. H. Yen, Y. S. Lin, and H. B. Liang, "An Analysis of Silicon Substrate Effects in LNA for 60 GHz WLAN Applications," Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS), pp. 34, Kaohsiung, Taiwan.
- [B118] Y. S. Lin, H. B. Liang, S. C. Chen, and M. S. Huang, "An Analysis of Layout on the Noise Figure and Q-factor Performances of Circular Planar Spiral Inductors," Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS), pp. 21, Kaohsiung, Taiwan.
- [B119] Y. S. Lin, H. B. Liang, T. Wang, and S. S. Lu, "MEMS 3-D Stacked RF Transformers Fabricated by 0.18 mm MS/RF CMOS technology With Improved Power Loss and Noise Figure Performances," Solid-Stae Devices and Materials Conference, Kobe, Japan, pp. 606-607, 2005.
- [B120] Y. S. Lin, H. B. Liang, C. C. Chen, J. L. Chen, and S. S. Lu, "Small-Signal Intrinsic Base Resistance Effect on InP-InGaAs, InGaP-GaAs, and SiGe HBTs," Proceedings of 2005 IEEE Device Research Conference (2005 IEEE DRC), Santa Barbara, California, USA, pp. 65-66, 2005.
- [B121] S. S. Lu, T. Wang, and Y. S. Lin, "High-performance Fully Integrated 4 GHz CMOS LC VCO in Standard 0.25-mm CMOS Technology," Proceedings of The 5th Emerging Information Technology Conference (EITC 2005), Taipei, Taiwan, pp. 157-160, 2005.
- [B122] H. B. Liang, Y. S. Lin, and G. W. Huang, "Wide-band Modeling and an Analysis of Noise Figure of Monolithic RF Inductors on Silicon Substrate," Proceedings of 2005 Symposium on Nano-Device Technology, Hsin-Chu, Taiwan, pp. 249-252, 2005.
- [B123] H. B. Liang, Y. S. Lin, J. N. Yeh, G. W. Huang, and S. S. Lu, "Wide-Band Modeling of Temperature Effect on Differentially Symmetrical 4-port Transformer on Silicon," Proceedings of 2005 Symposium on Nano-Device Technology, Hsin-Chu, Taiwan, pp. 253-256, 2005.
- [B124] J. L. Chen, Y. S. Lin, K. H. Chen, and G. W. Huang, "An Analysis of Substrate Resistance Effects on S-Parameters, fT, fmax, and NF Performances of 0.18 mm RF MOSFETs," Proceedings of 2005 Symposium on Nano-Device Technology, Hsin-Chu, Taiwan, pp. 245-248, 2005.
- [B125] K. N. Liao, Y. S. Lin, and H. B. Liang, "A 2.4/5.7 GHz Concurrent Dual-Band SiGe BiCMOS LNA," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 291-296, 2004.
- [B126] C. C. Chen, Y. S. Lin, K. N. Liao, and W. H. Liao, "A 5 GHz Mixer for WLAN Application Using SiGe Technology," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 347-350, 2004.
- [B127] K. N. Liao, Y. S. Lin, and S. C. Chen, "A Low-Power and Low-Phase-Noise SiGe VCO at 5-GHz Band Frequencies," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 407-410, 2004.
- [B128] H. B. Liang, Y. S. Lin, J. L. Chen, and W. H. Liao, "Optimization of RF Stacked Spiral Inductors, Two-in-One Planar Inductor and Their Applications to Wireless Circuit Design," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 373-378, 2004.
- [B129] K. H. Chen, Y. S. Lin, J. L. Chen, and K. N. Liao, "A CMOS Wideband Amplifier with Capacitive and Inductive Peaking Technique for WLAN Applications," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 214-217, 2004.
- [B130] C. C. Chen, Y. S. Lin, and W. H. Liao, "The Switched Multi-Band LNA in 0.18 mm CMOS Technology," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 379-384, 2004.
- [B131] Y. S. Lin, C. C. Chen, S. C. Chen, and S. S. Lu, "A Miniaturized Monolithic Low Noise Amplifier for 2.4/5.2/5.7 GHz WLAN Applications Using InGaP/GaAs HBT Technology," 2004 IEEE Asia-Pacific Conference on Advanced System Integrated Circuits (AP-ASIC 2004), pp. 292-295, Fukuoka, Japan.
- [B132] Y. S. Lin, H. B. Liang, and S. S. Lu, "An Analysis of the Bias Dependence of Scattering Parameters S11 and S22 of SiGe Heterojunction Bipolar Transistors (HBTs)," 2004 IEEE Radio Frequency Integrated Circuits Symposium, pp. 611-614, Fort Woth, Texas, USA.
- [B133] Y. S. Lin, T. Wang, and S. S. Lu, "Temperature-Dependence of Noise Figure of Monolithic RF Transformers on a Thin (20 mm) Silicon Substrate," IEEE 2004 Radio and Wireless Conference, pp. 103-106, Atlanta, USA.
- [B134] Y. S. Lin, Jien-Nan Yeh, and Si-Chang Chen, "An Analysis of Small-Signal Source-Body Resistance Effect on RF Power MOSFETs for 5-GHz Band WLAN Applications," IEEE 2004 Radio and Wireless Conference, pp. 99-102, Atlanta, USA.
- [B135] Y. S. Lin, H. B. Liang, and G. W. Huang, "Temperature Induced Substrate Effect in Monolithic RF Active and Passive Devices on Silicon," 4th International Conference on Microwave and Millimeter Wave Technology (ICMMT-2004), Beijing, China, pp. 101-104.
- [B136] Y. S. Lin, and S. H. Wu, "Temperature and Substrate Thickness Dependence of Q and NF in High-Q Broadband Spiral Inductors for CMOS RF MEMSOC Applications," 4th International Conference on Microwave and Millimeter Wave Technology (ICMMT-2004), Beijing, China, pp. 105-108.
- [B137] K. N. Liaw, and Y. S. Lin, "A Monolithic Differential VCO for 5 GHz-Band Applications using InGap/GaAs HBT Techology," 2004 Cross Strait Triple Radio & Wireless Conference (CSTRW04), Hsin-Feng, Taiwan, pp. 11-14.
- [B138] K. N. Liaw, and Y. S. Lin, "S-band/C-band Current Dual-Band LNA with 0.35 mm SiGe BiCMOS Technology," 2004 Cross Strait Triple Radio & Wireless Conference (CSTRW04), Hsin-Feng, Taiwan, pp. 15-18.
- [B139] T. H. Lee, Y. S. Lin, and G. W. Huang, "Characterization and Modeling of High-Performance Monolithic Inductors with Halo Substrate Contact Pattern Shield," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp.210-213.
- [B140] T. H. Lee, and Y. S. Lin, "Study of Monolithic Symmetric Inductors on Silicon with Various Tapered Line Widths," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 325-328.
- [B141] S. H. Wu, H. B. Liang, and Y. S. Lin, "Area-Efficient 3D Inductors with 6μm-Thick Top Metal for RF-IC Applications," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 364-367.
- [B142] K. N. Liao, Y. S. Lin, and G. W. Huang, "A Comprehensive Study of Temperature (-25 ~ 175oC) Effect on 2.4/5.7 GHz Concurrent Dual-Band InGaP/GaAs LNA," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 360-363.
- [B143] K. H. Chen, Y. S. Lin, and J. L. Chen, "Temperature and Bias Effect of Silicon Substrate Resistance Effect in 4-T RF CMOS," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 337-340.
- [B144] C. C. Chen, and Y. S. Lin, "Study of Temperature Effect on an InGaP/GaAs HBT LNA suitable for 0.9/1.8/2.4 Multi-Band applications," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 334-336.
- [B145] T. H. Lee and Y. S. Lin, "A 3 mW Concurrent Dual-Band Low Noise Amplifier for WLAN in 0.18 mm CMOS," National Symposium on Telecommunications, Taoyuan, Taiwan, R.O.C, 2003.
- [B146] H. B. Liang and Y. S. Lin, "A 5.2 GHz Low Noise Amplifier with Substrate Thinning and Thick Gold-Plated Inductor," National Symposium on Telecommunications, Taoyuan, Taiwan, R.O.C, 2003.
- [B147] T. H. Lee, Y. S. Lin, and S. S. Lu, "Analysis and Design of CMOS Wide-BAND Amplifier With Multiple Feedback Loops," 2003 National Symposium on Telecommunications, Taoyuan, Taiwan, R.O.C., 2003.
- [B148] Y. S. Lin, T. H. Lee, and H. B. Liang, "A Comprehensive Analysis of the Temperature Effects on the Scattering parameters and Gain Performances of a 100 nm RF nMOSFET," 2003 Electron Devices and Materials Symposium, Keelung, Taiwan, R.O.C, pp. 140-141.
- [B149] Y. S. Lin, "An Analysis of RF Scattering Parameters, Noise and Power Performances of RF Power MOS in 0.15 mm CMOS Technology for RF SOC Applications," 2003 Electron Devices and Materials Symposium, Keelung, Taiwan, R.O.C, pp. 104-105.
- [B150] T. H. Lee, Y. S. Lin, H. Y. Tu, D. S. Chou, and S. S. Lu, "Temperature- Dependence of DC and RF Characteristics of E-mode Ga0.51In0.49P/ In0.15Ga0.85As pHEMTs," 2003 Electron Devices and Materials Symposium, Keelung, Taiwan, R.O.C, 261-264.
- [B151] Y. S. Lin, H. W. Chiu, S. H. Wu, and S. S. Lu, "Characterization and Modeling of High Q-Factor, High Resonant Frequency Spiral Inductors with 6 m thick Top-Metal for RF-IC Applications," Proceedings of the Solid-Stae Devices and Materials, Tokyo, Japan, 2003.
- [B152] Y. S. Lin, H. Y. Tu, D. S. Chou, and S. S. Lu, "DC, and RF Scattering Parameters, Noise and Power Characteristics of Enhancement-Mode In0.51Ga0.49P/In0.15Ga0.85As/ GaAs Power pHEMT’s," Proceedings of IEEE 2003 International Symposium on Compound Semiconductors, pp. 223-224, San Diego, USA.
- [B153] Y. S. Lin, K. N. Liao, and S. S. Lu, "Characterization and Modeling of the Anomalous Dip in Scattering Parameter S11 of InGaP/GaAs HBTs," Proceedings of IEEE 2003 International Symposium on Compound Semiconductors, pp. 209-210, San Diego, USA.
- [B154] Y. S. Lin, H. Y. Tu, H. W. Chiu, and S. S. Lu, "Characterization and Modeling of Size Effect on the Performances of 0.10 mm RF MOSFETs for SOC Applications," Proceedings of 2003 IEEE Radio-Frequency Integrated- Circuits, pp. 543-546, Philadelphia, USA.
- [B155] Y. S. Lin, T. H. Lee, H. B. Liang, and S. S. Lu, "Characterization and Modeling of 100 nm RF Generic CMOS and 500 nm RF Power CMOS," Proceedings of IEEE VLSI Technology, System and Applications, Hsin-Chu, Taiwan, R.O.C., 2003.
- [B156] Y. S. Lin, S. S. Lu, T. H. Lee, and H. B. Liang, "Characterization and Modeling of Small-Signal Substrate Resistance Effect in RF CMOS," IEEE Radio Frequency Integrated Circuits Symposium, Seattle, U.S.A., pp. 315-318, 2002.
- [B157] Y. S. Lin, H. B. Liang, and S. S. Lu, "An Analysis of Small-Signal Gate-Drain Resistance Effect on RF Power MOSFETs for SOC Applications," International Electron Devices and Materials Symposium, Taipei, Taiwan, R.O.C., pp. 211-214, 2002.
- [B158] Y. S. Lin, C. C. Wu, C. S. Chang, R. P. Yang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "Low-leakage 0.11 mm CMOS for Low-Power RF-ICs and SRAMs Applications," Solid-State Device Meeting (SSDM), Nagoya, Japan, 2002.
- [B159] Y. S. Lin, H. Y. Tu, and S. S. Lu, "A Comprehensive Analysis of the Kink Phenomenon in Scattering Parameter S22 and S21 of GaInP/GaAs HBTs," Solid-State Device Meeting (SSDM), Nagoya, Japan, 2002.
- [B160] Y. S. Lin, S. S. Lu and C. C. Chen, "Characterization and Modeling of High-Output- Power Microwave Ga0.51In0.49P/InxGa1-xAs/GaAs Doped- Channel FETs," 2002 Taiwan-Japan Symposium on SQUID & Communication Electronics, Yuanlin, Taiwan, R.O.C.
- [B161] Y. S. Lin and T. H. Lee, "High Performance Micro-machined Tapered Spiral Inductors with Resonant Frequency of 17 GHz," 2002 Taiwan-Japan Symposium on SQUID & Communication Electronics, Yuanlin, Taiwan, R.O.C.
- [B162] Y. S. Lin, H. B. Liang, and S. S. Lu, "An Analysis of the Kink Effect of Scattering Parameter S22 in RF Power MOSFETs for System-On-Chip (SOC) Applications," 2002 Taiwan-Japan Symposium on SQUID & Communication Electronics, Yuanlin, Taiwan, R.O.C.
- [B163] T. H. Lee and Y. S. Lin, "A High-Performance 5.2 GHz CMOS LNA with Novel Substrate Contact Structure and Shield Pads," 2002 National Symposium on Telecommunications, vol. II, pp.252-257, Puli, Taiwan, R.O.C.
- [B164] H. M. Hsu, J. G. Su, Y. S. Lin, M. H. Tseng, J. C. H. Lin, J. Y. C. Sun, D. Tang, T. T. Yang, T. S. Tu, L. F. Lin, "High Q Broadband Copper Spiral Inductors with Q=45 on Proton-bombarded Semi-insulating Silicon Substrate," IEEE Asia-Pacific Microwave Conference, pp. 113-116, 2002.
- [B165] Y. S. Lin, H. M. Hsu, T. H. Lee, and H. B. Liang, "Effects of Geometric Structure and Temperature on the Performance of Spiral Inductors," Electron Device and Material Conference, Kaohsiung, Taiwan, pp. 475-476, 2001.
- [B166] Y. S. Lin, H. T. Huang, C. C. Wu, Y. K. Leung, H. Y. Pan, T. E. Chang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "On the SiO2 Based Gate-Dielectric Scaling Limit for Low-Standby Power Applications in the Context of a 0.13 mm CMOS Logic Technology," 9TH International Symposium on Integrated Circuits, Devices & Systems, Singapore, 2001.
- [B167] S. S. Lu, and Y. S. Lin, "Single-Voltage-supply Operation of GaInP/InGaAs Doped Channel FET's for Wireless Communication," IEEE 25th International Symposium on Compound Semiconductors, Nara, Japan, October 1998.
- [B168] Y. S. Lin, and S. S.Lu, "High-Power High-Speed Ga0.51In0.49P/InxGa1-xAs Doped Channel FET’s," 9TH IEEE International Conference on Indium- Phosphide and Related Materials, Hyannis, Massachusetts, U.S.A., 1997.
- [B169] S. S. Lu and Y. S. Lin, "Fabrication and Simulation of Ga0.51In0.49P/InxGa1-xAs Doped Channel FET’s and MMIC Amplifiers Grown by GSMBE," IEEE Device Research Conference, Colorado, U.S.A., 1997.
- [B170] Y. S. Lin and S. S. Lu, "High-Breakdown-Voltage High-Speed Ga0.51In0.49P/ In0.2Ga0.8As Doped Channel FET’s Using Triple-Recessed Gate Structure," 24TH IEEE International Symposium on Compound Semiconductors, San Diego, U.S.A., 1997.
- [B171] Y. S. Lin , Y. J. Wang, S. S. Lu and C. C. Meng, "Simulation and Fabrication of High Performance Ga0.51In0.49P/GaAs MISFET’s Grown by GSMBE," IEEE GaAs IC Symposium, Orlando, U.S.A, 1996.
- [B172] Y. S. Lin and S. S. Lu, "High-Frequency High-Breakdown-Voltage Ga0.51In0.49P Channel MISFET’s Grown by GSMBE," 21TH International Infrared and Millimeter Waves Conference, Berlin, Germany, 1996.
- [B173] Y. S. Lin and S. S. Lu, "Study of Influence of Extrinsic Capacitances on High-Frequency Performance of Ga0.51In0.49P/GaAs MISFETs," IEEE International Semiconductor Conference, Sinaia, Romania, 1996.
- [B174] Y. S. Lin, S. S. Lu and T. P. Sun, "Ga0.51In0.49P/GaAs Differential Amplifier for High Frequency Application," 20TH International Infrared and Millimeter Waves Conference, Orlando, U.S.A., 1995.
- [B175] S. S. Lu and Y. S. Lin, "High-Power Ga0.51In0.49P/GaAs Airbridge Gate MISFET Grown by GSMBE," IEEE International Semiconductor Conference, Sinaia, Romania, 1995.
- [B176]Y. S. Lin, G. Y. Wu and K. M. Hung, "Theoretical Study of Hole Tunneling Under a Transverse Magnetic Field," Annual Meeting of R.O.C. Physical Society, 1993