Publication List
A、Journal Papers (期刊論文)
[2014]
[2014]
- [A1] Y. S. Lin, W. C. Wen, and C. C. Wang, "13.6 mW 79 GHz CMOS Up-Conversion Mixer with 2.1 dB Gain and 35.9 dB LO-RF Isolation," IEEE Microwave and Wireless Components Letters, vol. 24, no. 2, pp. 126-128, Feb. 2014.
- [A2] Y. S. Lin, C. C. Wang, G. L. Lee, and C. C. Chen, "High-Performance Wideband Low-Noise Amplifier Using Enhanced p-Match Input Network," IEEE Microwave and Wireless Components Letters, vol. 24, no. 3, pp. 200-202, Mar. 2014.
- [A3] Y. S. Lin, G. L. Lee, and C. C. Wang, "Low-Power 77~81 GHz CMOS LNA with Excellent Matching for Automotive Radars," IET Electronics Letters, vol. 50, no. 3, pp. 207-209, 2014.
- [A4] Y. S. Lin, and G. H. Li, "13 mW 80 GHz Down-Conversion Mixer with 1.5 dB Gain and 49.2 dB LO-RF Isolation," to appear in IET Electronics Letters, vol. 50, no. xx, 2014.
- [A5] Y. S. Lin, and J. N. Chang, "A 24-GHz Power Amplifier with Psat of 15.9 dBm and PAE of 14.6% Using Standard 0.18 mm CMOS Technology," Analog Integrated Circuits & Signal Processing, vol. 79, no. 2, pp. 427-435, May 2014.
- [A6] Y. S. Lin, W. C. Wen, and T. M. Tsai, "A 12.1 mW 50~67 GHz CMOS Up-Conversion Mixer with 6 dB Conversion Gain and 30.7 dB LO-RF Isolation," Microwave and Optical Technology Letters, vol. 56, no. 2, pp. 475-483, Feb. 2014.
- [A7] Y. S. Lin, C. C. Wang, and J. H. Lee, "Design and Implementation of a 1.9~22.5 GHz CMOS Wideband LNA With Dual-RLC-Branch Wideband Input and Output Matching Networks," Microwave and Optical Technology Letters, vol. 56, no. 3, pp. 677-684, Mar. 2014.
- [A8] Y. S. Lin, C. C. Wang, G. L. Lee, and C. C. Chen, "A High-Performance Low-Noise Amplifier for 71~76, 76~77 and 77~81 GHz Communication Systems in 90 nm CMOS," Microwave and Optical Technology Letters, vol. 56, no. 7, pp. 1673-1680, Jul. 2014.
- [A9] Y. S. Lin, and Wei-Chen Wen, "Design and Implementation of a W-Band High-Performance Double-Balanced Active Up-Conversion Mixer in 90 nm CMOS Technology," Microwave and Optical Technology Letters, vol. 56, no. 8, pp. 1812-1819, Aug. 2014.
- [A10] Y. S. Lin, C. C. Wang, and J. H. Lee, "A Low-Power, Low-Noise and High Linearity 60 GHz Wideband CMOS Low-Noise Amplifier for Wireless Personal Area Network (WPAN) Systems," Analog Integrated Circuits & Signal Processing, vol. 80, no. 1, pp. 39-47, Jul. 2014.
- [A11] Y. S. Lin, C. C. Wang, G. L. Lee, and C. H. Wang, "Analysis and Design of a Compact Ultra-Wideband LNA with 2.3±0.1 dB NF and ±14.6 ps Group-Delay-Variation in 0.18 mm CMOS," to appear in Microwave and Optical Technology Letters, vol. 56, no. 9, Sep. 2014.
- [A12] Y. S. Lin, C. C. Wang, Y. C. Liao, and S. S. Lu, "Design and Implementation of Intra-Body Communication (IBC) Hub/Alarm Unit in IBC Platform for Fall Prevention System," to appear in Microwave and Optical Technology Letters, vol. 56, no. 10, Oct. 2014.
- [A13] Y. S. Lin, F. C. Liu, and W. C. Wen, "Design and Implementation of Squared and Octagonal W-Band CMOS Marchand Baluns for W-Band Communication Systems," to appear in Microwave and Optical Technology Letters, vol. 56, no. 10, Oct. 2014.
- [A14] Y. S. Lin, H. B. Liang, M. C. Lin and C. H. Wang, "Enhancement of Sensitivity of RF Modules for Wireless Health Care and Home Security Systems," to appear in Microwave and Optical Technology Letters, vol. 56, no. 12, Dec. 2014.
- [A15] Y. S. Lin, G. H. Li, and N. V. Hieu, "A 75~85 GHz Down-Conversion Mixer with Integrated Marchand Baluns in 90 nm CMOS with Excellent Matching and Port-to-Port Isolation for Automotive Radars," to appear in Microwave and Optical Technology Letters, vol. 56, no. 12, Dec. 2014.
- [A16] Y. S. Lin, and R. C. Liu, "A Low-Power, High-Gain and Low-Noise 5~6 GHz CMOS Low-Noise Amplifier with Excellent Reverse Isolation for IEEE 802.11 n/ac WLAN Applications," to appear in Microwave and Optical Technology Letters, vol. 56, no. 12, Dec. 2014.
- [A14] J. H. Lee, and Y. S. Lin, "60 GHz CMOS Down-Conversion Mixer with 15.46 dB Gain and 64.7 dB LO-RF Isolation," IET Electronics Letters, vol. 49, no. 4, pp. 264-266, 2013.
- [A15] J. H. Lee, and Y. S. Lin, "3.88-dB NF 60-GHz CMOS UWB LNA with Small Group-Delay- Variation," IET Electronics Letters, vol. 49, no. 7, pp. 472-474, 2013.
- [A16] C. W. Lu, C. M. Hsiao, Y. S. Lin, M. C. F. Chang, "A 10-Bit DAC with 1.6-Bit Interpolation Cells for Compact LCD Column Driver ICs," IEEE/OSA Journal of Display Technology, vol. 9, no. 3, pp. 176-183, 2013.
- [A17] C. W. Lu, C. M. Hsiao, and Y. S. Lin, "A 10-Bit DAC with Offset-Adjustable Op-Amp for LCD Column Driver Applications," Analog Integrated Circuits & Signal Processing, vol. 74, no. 3, pp. 651-660, Mar. 2013.
- [A18] J. H. Lee, and Y. S. Lin, "60-GHz CMOS Down-Conversion Mixer with Current-Reused RF Single-to-Differential Converter and Integrated Marchand Balun," Microwave and Optical Technology Letters, vol. 55, no. 8, pp. 1937-1946, Aug. 2013.
- [A19] T. M. Tsai, Y. S. Lin, and W. C. Wen, "A Low Power and High Conversion Gain 60-GHz CMOS Up-Conversion Mixer Using Current Injection and Dual Negative Resistance Compensation Techniques," Microwave and Optical Technology Letters, vol. 55, no. 8, pp. 1830-1836, Aug. 2013.
- [A20] T. M. Tsai, and Y. S. Lin, "A 60-GHz Double-Balanced Mixer with Negative Resistance Compensation for Direct Up-Conversion Using 90-nm CMOS Technology," Microwave and Optical Technology Letters, vol. 55, no. 3, pp. 536-543, 2013.
- [A21] J. N. Chang, and Y. S. Lin, "A High-Performance CMOS Power Amplifier for 60 GHz Short-Range Communication Systems," Microwave and Optical Technology Letters, vol. 55, no. 5, pp. 1155-1160, 2013.
- [A22] J. F. Chang, and Y. S. Lin, "A High-Voltage Driving 60 GHz Power Amplifier with Psat of 13 dBm and PAE of 9.1% in 90 nm CMOS for IEEE 802.11ad Communication Systems," Microwave and Optical Technology Letters, vol. 55, no. 9, pp. 2033-2039, Sep. 2013.
- [A23] C. H. Wu, Y. S. Lin, and C. C. Wang, "A 3.1~10.6 GHz Current-Reused CMOS Ultra-Wideband Low-Noise Amplifier Using Self-Forward Body Bias and Forward Combining Techniques," Microwave and Optical Technology Letters, vol. 55, no. 10, pp. 2296-2302, Oct. 2013.
- [A24] Y. S. Lin, J. H. Lee, S. L. Huang, C. H. Wang, C. C. Wang, and S. S. Lu, "Design and Analysis of a 21~29 GHz Ultra-Wideband Receiver Front-End in 0.18 mm CMOS Technology," IEEE Microwave Theory and Techniques, vol. 60, no. 8, pp. 2590-2604, Aug. 2012.
- [A25] C.W. Lu; P. Y. Yin, C. M. Hsiao, M. C. F. Chang, and Y. S. Lin, "A 10-bit Resistor-Floating-Resistor-String DAC (RFR-DAC) for High Color-Depth LCD Driver ICs," IEEE Journal of Solid-State Circuits, vol. 47, no. 10, pp. 2454-2466, Oct. 2012.
- [A26] J. F. Chang, and Y. S. Lin, "3.2~9.7 GHz Ultra-Wideband Low Noise Amplifier with Excellent Stop-band Rejection," IET Electronics Letters, vol. 48, no. 1, pp. 44-45, Jan. 2012.
- [A27] T. M. Tsai, and Y. S. Lin, "15.1 mW 60 GHz Up-Conversion Mixer with 4.5 dB Gain and 57.5 dB LO-RF Isolation," IET Electronics Letters, vol. 48, no. 14, pp. 844-845, Jul. 2012.
- [A28] J. N. Chang, and Y. S. Lin, "60 GHz CMOS power amplifier with Psat of 11.4 dBm and PAE of 15.8%," IET Electronics Letters, vol. 48, no. 17, pp. 1038-1039, Aug. 2012.
- [A29] J. F. Chang, and Y. S. Lin, "DC-10.5-GHz CMOS Distributed Amplifier with RC Gate Terminal Network for UWB Pulse Radio Systems," IET Trans. on Microwaves, Antennas, and Propagation, vol. 6, no. 2, pp. 127-134, Feb. 2012.
- [A30] J. F. Chang, and Y. S. Lin, " A 9.45 mW 3~9 GHz Receiver Frond-End with Excellent Stop-band Rejection for UWB Systems Using 0.18 mm CMOS Technology," IET Trans. on Microwaves, Antennas, and Propagation, vol. 6, no. 3, pp. 282-289, Mar. 2012.
- [A31] Y. S. Lin, C. C. Wang, P. W. Yu, J. H. Lee, and S. S. Lu, "A 0.63 V, 1.7 mW, 11.55 GHz Low Phase-Noise QVCO with Intrinsic-Tuned Technique in 0.18 mm CMOS," IET Trans. on Microwaves, Antennas, and Propagation, vol. 6, no. 13, pp. 1437-1442, 2012.
- [A32] Y. S. Lin, P. L. Huang, T. Wang, and S. S. Lu, "A Novel Coplanar-Waveguide (CPW) Band-Pass Filter Utilizing the Inductor-Capacitor (LC) Structure in 0.18 mm Complementary Metal-Oxide- Semiconductor (CMOS) Technology for Millimeter-Wave Applications," Japanese Journal of Applied Physics, vol. 51, pp. 034201-1~034201-4, Mar. 2012.
- [A33] Y. C. Chen, C. H. Wang, and Y. S. Lin, "A Low-Power 24 GHz CMOS Receiver Front-End Using Isolation Enhancement Technique for Automotive Radar Systems," Microwave and Optical Technology Letters, vol. 54, no. 6, pp. 1471-1476, Jun. 2012.
- [A34] C. Y. Lin, C. H. Cheng, J. F. Chang, and Y. S. Lin, "1-dB Insertion-Loss 1~14.3 GHz Ultra-Wideband Bandpass Filter Using Standard 0.18 mm CMOS Technology," Microwave and Optical Technology Letters, vol. 54, no. 4, pp. 1044-1047, Apr. 2012.
- [A35] C. H. Wu, Y. S. Lin, and C. C. Wang, "A 11.81 mW 3.1~10.6 GHz Ultra-Wideband Low-Noise Amplifier with 2.87±0.19 dB NF and 12.52±0.81 dB Gain Using 0.18 um CMOS Technology," Microwave and Optical Technology Letters, vol. 54, no. 6, pp. 1145-1450, Jun. 2012.
- [A36] Y. S. Lin, C. C. Wang, C. C. Chen, C. C. Hsiao, and Y. H. Chou, "A High-Performance IBC-Hub Transceiver for Intra-Body Communication System," Microwave and Optical Technology Letters, vol. 54, no. 5, pp. 1143-1153, May 2012.
- [A37] J. F. Chang, and Y. S. Lin, "A Low-Power 3.2~9.7 GHz Ultra-Wideband Low Noise Amplifier with Excellent Stop-band Rejection Using 0.18 mm CMOS Technology," Microwave and Optical Technology Letters, vol. 54, no. 5, pp. 1253-1261, May 2012.
- [A38] J. F. Chang, and Y. S. Lin, "A 3.1 dB NF, 21.31 dB Gain Micro-machined 3~10 GHz Distributed Amplifier for UWB Systems in 0.18 um CMOS Technology," Microwave and Optical Technology Letters, vol. 54, no. 5, pp. 1163-1167, May 2012.
- [A39] C. Y. Lin, J. F. Chang, and Y. S. Lin, "Design and Implementation of a 2.8-dB Insertion Loss V-Band Bandpass Filter in 0.13 um CMOS Technology," Microwave and Optical Technology Letters, vol. 54, no. 8, pp. 2001-2006, Aug. 2012.
- [A40] C. Y. Lin, Y. S. Lin, H. C. Lu, and Y. L. Chang, "Design and Implementation of a 24/60 GHz Dual- Band Monopole Meander-Line Planar CMOS Antenna," Microwave and Optical Technology Letters, vol. 54, no. 7, pp. 1731-1737, Jul. 2012.
- [A41] C. Y. Lin, Y. S. Lin, H. C. Lu, and Y. L. Chang, "Design and Implementation of a High-Performance 60 GHz CMOS Slot Antenna," Microwave and Optical Technology Letters, vol. 54, no. 9, pp. 2061-2065, Sep. 2012.
- [A42] Y. S. Lin, and P. W. Yu, "A 28/56 GHz Dual-Band CMOS VCO Using Reversely Tunable LC Source-Degeneration and the Push-Push Technique," Microwave and Optical Technology Letters, vol. 54, no. 10, pp. 2272-2278, Oct. 2012.
- [A43] Y. S. Lin, and P. W. Yu, "A Miniature and Low-Power 24 GHz CMOS VCO Using Tunable LC Source-Degeneration and Transformer Feedback Techniques for Automotive Radars," Microwave and Optical Technology Letters, vol. 54, no. 11, pp. 2553-2558, Nov. 2012.
- [A44] Y. T. Lin, Y. S. Lin, and S. S. Lu, "A 0.5 V Biomedical System-on-a-Chip for Intra-body Communication System," IEEE Trans. on Industrial Electronics, vol. 58, no. 2, pp. 690-699, Feb. 2011.
- [A45] Y. S. Lin, J. F. Chang, and S. S. Lu, "Analysis and Design of CMOS Distributed Amplifier Using Inductively-Peaking Cascaded Gain Cell for UWB Systems," IEEE Trans. on Microwave Theory and Techniques, vol. 59, no. 10, pp. 2513-2524, Oct. 2011.
- [A46] J. F. Chang, and Y. S. Lin, "A High-Performance Distributed Amplifier Using Multiple Noise Suppression Techniques," IEEE Microwave and Wireless Components Letters, vol. 21, no. 9, pp. 495-497, Sep. 2011.
- [A47] C. W. Tsou, C. C. Chen, and Y. S. Lin, "A 24-GHz I/Q Direct-Down Converter with Integrated Quadrature Couplers and Baluns in Standard 0.18 mm CMOS Technology," IET Trans. on Microwaves, Antennas, and Propagation, vol. 5, no. 6, pp. 718-727, Jun. 2011.
- [A48] J. F. Chang, and Y. S. Lin, "A 0.99 mW 3-10 GHz CG CMOS UWB LNA Using T-match Input Network and Self-Body-Bias Technique," IET Electronics Letters, vol. 47, no. 11, pp. 658-659, May 2011.
- [A49] J. F. Chang, and Y. S. Lin, "A 3.15 dB NF, 7.2 mW 3~9 GHz CMOS Ultra-Wideband Receiver Front- End," IET Electronics Letters, vol. 47, no. 25, pp. 1401-1402, Dec. 2011.
- [A50] J. F. Chang, and Y. S. Lin, "A 2.76-mW, 3- to 10-GHz Ultra-Wideband LNA Using 0.18-mm CMOS Technology," Microwave and Optical Technology Letters, vol. 53, no. 1, pp. 94-97, Jan. 2011.
- [A51] J. H. Lee, C. C. Chen, and Y. S. Lin, "A V-band CMOS Sub-Harmonic Mixer with Integrated Frequency Doubler and 180o Out-of-Phase Splitter," Microwave and Optical Technology Letters, vol. 53, no. 4, pp. 870-875, Apr. 2011.
- [A52] J. F. Chang, and Y. S. Lin, "A 3.9 dB NF, 24.5 dB Gain 0.3~10.5 GHz Distributed Amplifier Using Dual-Inductive-Peaking Cascade Gain Cell for UWB Systems in 0.18-μm CMOS," Microwave and Optical Technology Letters, vol. 53, no. 10, pp. 2228-2232, Oct. 2011.
- [A53] C. C. Wang, C. Z. Chen, and Y. S. Lin, "Wide Locking Range Divide-by-3 Injection-Locked Frequency Divider Using Differential-Injection Linear Mixers and Dual Frequency Tuning," Microwave and Optical Technology Letters, vol. 53, no. 11, 2622-2626, Nov. 2011.
- [A54] C. C. Wang, C. Z. Chen, and Y. S. Lin, "CMOS Direct Injection-Locked Frequency Divider (3.55 mW 80 GHz) with 26.3% Locking Range Using Distributed LC Tank and Body Bias Techniques," Microwave and Optical Technology Letters, vol. 53, no. 11, pp. 2694-2697, Nov. 2011.
- [A55] C. C. Chen, C. W. Tsou, and Y. S. Lin, "A Single-Chip 24-GHz Differential I/Q Receiver in 0.18-m CMOS Technology," Microwave and Optical Technology Letters, vol. 53, no. 11, pp. 2593-2601, Dec. 2011.
- [A56] C. Z. Chen, C. C. Wang, Y. S. Lin, and G. W. Huang, "CMOS (2.28 mW, 67.28-80.78 GHz) Divide-by-4 Direct Injection-Locked Frequency Divider Using Tunable LC Source-Degeneration," Microwave and Optical Technology Letters, vol. 53, no. 12, pp. 2776-2781, Dec. 2011.
- [A57] C. C. Chen, and Y. S. Lin, "Low Power and High Conversion Gain 21-GHz Receiver Front-End in a Standard 0.18-m CMOS Technology," Microwave and Optical Technology Letters, vol. 53, no. 12, pp. 2875-2879, Dec. 2011.
- [A58] H. K. Chen, Y. S. Lin, and S. S. Lu, "Analysis and Design of a 1.6-28 GHz Compact Wideband LNA in 90 nm CMOS Using a -match Input Network," IEEE Trans. on Microwave Theory and Techniques, vol. 58, no. 8, pp. 2092-2104, Aug. 2010.
- [A59] Y. S. Lin, C. Z. Chen, H. Y. Yang, C. C. Chen, J. H. Lee, G. W. Huang, and S. S. Lu, "Analysis and Design of a CMOS UWB LNA with Dual-RLC-Branch Wideband Input Matching Network," IEEE Trans. on Microwave Theory and Techniques, vol. 58, no. 2, pp. 287-296, Feb. 2010.
- [A60] J. H. Lee, C. C. Chen, and Y. S. Lin, "A 3.7 mW 24 GHz LNA with 10.1 dB Gain and 4.5 dB NF in 0.18 m CMOS Technology," IET Electronics Letters, vol. 46, no. 19, pp. 1310-1311, Sep. 2010.
- [A61] C. H. Wang, Y. T. Chiu, and Y. S. Lin, "A 3.1 dB NF 20-29 GHz CMOS UWB LNA Using a T-match Input Network," IET Electronics Letters, vol. 46, no. 19, pp. 1312-1313, Sep. 2010.
- [A62] C. Z. Chen, T. Y. Chen, Y. S. Lin, and G. W. Huang, "Excellent Sensitivity 64.8-GHz CMOS Injection-Locked Frequency Divider with 10.2-GHz Locking Range," Microwave and Optical Technology Letters, vol. 52, no. 3, pp. 518-523, Mar. 2010.
- [A63] J. F. Chang, and Y. S. Lin, "Design and Implementation of a High-Performance V-Band CMOS Bandpass Filter," Microwave and Optical Technology Letters, vol. 52, no. 2, pp. 309-316, Feb. 2010.
- [A64] J. F. Chang, and Y. S. Lin, "Miniature 1.87-dB Insertion-Loss V-Band CMOS Bandpass Filter with Two Enhanced Finite Transmission Zeros," Microwave and Optical Technology Letters, pp. 1830-1836, vol. 52, no. 8, Aug. 2010.
- [A65] Y. T. Chiu, Y. S. Lin, and J. F. Chang, "A 18.85 mW 20-29 GHz Wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB Gain," Microwave and Optical Technology Letters, vol. 52, no. 9, pp. 2017-2020, Sep. 2010.
- [A66] C. C. Chen, Y. S. Lin, P. L. Huang, and S. S. Lu, "A 4.9-dB NF 53.5-62-GHz Micro-machined CMOS Wideband LNA with Small Group-Delay-Variation," Microwave and Optical Technology Letters, vol. 52, no. 11, pp. 2427-2432, Nov. 2010.
- [A67] J. H. Lee, C. C. Chen, and Y. S. Lin, "A 60 GHz CMOS Receiver Front-End with Integrated 180o Out-of-Phase Wilkinson Power Divider," Microwave and Optical Technology Letters, vol. 52, no. 12, pp. 2688-2694, Dec. 2010.
- [A68] C. H. Chen, R. Z. Hwang, L. S. Huang, S. M. Lin, H. C. Chen, Y. C. Yang, Y. T. Lin, S. A. Yu, Y. S. Lin, Y. H. Wang, N. K. Chou, and S. S. Lu, "A Wireless Bio-MEMS Sensor for C-Reactive Protein Detection Based on Nanomechanics," IEEE Trans. on Biomedical Engineering, vol. 56, no. 2, pp. 462-470, Feb. 2009.
- [A69] J. F. Chang, and Y. S. Lin, "A 3-10 GHz Low-Power, Low-Noise CMOS Distributed Amplifier Using Splitting-Load Inductive Peaking and Noise-Suppression Techniques," IET Electronics Letters, vol. 45, no. 20, pp. 1033-1035, 2009.
- [A70] J. F. Chang, and Y. S. Lin, "Low-Power, High-Gain, and Low-Noise CMOS Distributed Amplifier for UWB Systems," IET Electronics Letters, vol. 45, no. 12, pp. 634-636, 2009.
- [A71] P. L. Huang, J. F. Chang, Y. S. Lin, and S. S. Lu, "A Micromachined V-Band CMOS Bandpass Filter with 2-dB Insertion-Loss," IET Electronics Letters, vol. 45, no. 2, pp. 100-101, 2009.
- [A72] M. C. Lu, J. F. Chang, Y. S. Lin, and L. C. Lu, "1.89-dB Insertion-Loss UWB BP-Filter with Three Finite Transmission Zeros Using Standard 0.18 mm CMOS Technology," IET Electronics Letters, vol. 45, no. 1, pp. 56-57, 2009.
- [A73] C. W. Tsou, C. C. Chen, and Y. S. Lin, "A 57-GHz CMOS VCO with 185.3% Tuning-Range Enhancement Using Tunable LC Source-Degeneration," Microwave and Optical Technology Letters, vol. 51, no. 11, pp. 2682-2684, Nov. 2009.
- [A74] T. Wang, S. S. Lu, Y. S. Lin, Y. Z. Juang, and G. W. Huang, "The RF Characteristics of Micromachined Coplanar Waveguide in 0.13 mm CMOS Technology by CMOS compatible ICP Dry Etching," Microwave and Optical Technology Letters, vol. 51, no. 11, pp. 2665-2668, Nov. 2009.
- [A75] P. L. Huang, Y. T. Lin, T. Wang, Y. S. Lin, and S. S. Lu, "A Micromachined SiGe HBT Ultra-Wideband Low-Noise Amplifier by BiCMOS Compatible ICP Deep-Trench Technology," Microwave and Optical Technology Letters, vol. 51, no. 11, pp. 2598-2601, Nov. 2009.
- [A76] Y. S. Lin, L. C. Lu, J. F. Chang, P. L. Huang, and S. S. Lu, "1.8-dB Insertion-Loss Planar UWB CMOS Bandpass Filter with Suspended Inductors," Microwave and Optical Technology Letters, vol. 51, no. 12, pp. 2946-2948, Dec. 2009.
- [A77] Y. T. Lin, Y. S. Lin, and S. S. Lu, "A Low-Power 2.4-GHz Receiver Front-End for Wireless Sensor Networks," Microwave and Optical Technology Letters, vol. 51, no. 12, pp. 3021-3024, Dec. 2009.
- [A78] M. C. Lu, J. F. Chang, L. C. Lu, and Y. S. Lin, "Miniature 60-GHz-Band Bandpass Filter with 2.55-dB Insertion-Loss Using Standard 0.13 m CMOS Technology" Microwave and Optical Technology Letters, vol. 51, no. 7, pp. 1632-1635, Jul. 2009.
- [A79] W. L. Hsu, C. Z. Chen, and Y. S. Lin, "A 58-GHz Wide-Locking Range CMOS Direct Injection-Locked Frequency Divider Using Input-Power-Matching Technique," Microwave and Optical Technology Letters, vol. 51, no. 3, pp. 685-689, Mar. 2009.
- [A80] W. L. Hsu, C. Z. Chen, and Y. S. Lin, "A 2 mW, 55.8-GHz CMOS Injection-Locked Frequency Divider with 7.1-GHz Locking Range," Microwave and Optical Technology Letters, vol. 51, no. 3, pp. 702-706, Mar. 2009.
- [A81] Y. S. Lin, and S. S. Wong, "A 60-GHz Low-Noise Amplifier for 60-GHz Dual-Conversion Receiver," Microwave and Optical Technology Letters, vol. 51, no. 4, pp. 885-891, Apr. 2009.
- [A82] T. H. Chang, C. Z. Chen, and Y. S. Lin, "A Low-Power Low-Phase-Noise 48-GHz CMOS LC VCO for 60-GHz Dual-Conversion Receiver," Microwave and Optical Technology Letters, vol. 51, no. 4, pp. 997-1000, Apr. 2009.
- [A83] C. C. Chen, Y. S. Lin, G. W. Huang, and S. S. Lu, "A 5.79 dB NF, 30-GHz-Band Monolithic LNA with 10 mW Power Consumption in Standard 0.18 m CMOS Technology," Microwave and Optical Technology Letters, vol. 51, no. 4, pp. 933-937, Apr. 2009.
- [A84] C. C. Chen, J. H. Lee, Y. S. Lin, C. Z. Chen G. W. Huang, and S. S. Lu, "Low Noise-Figure P+-AA-Mesh Inductors for CMOS UWB RFIC Applications, IEEE Trans. on Electron Devices, vol. 55, no. 12, pp. 3542-3548, Dec. 2008.
- [A85] H. Y. Yang, Y. S. Lin, and C. C. Chen, "A 2.5-dB NF 3.1-10.6-GHz CMOS UWB LNA with Small Group-Delay-Variation," IET Electronics Letters, vol. 44, no. 8, pp. 528-529, 2008.
- [A86] H. Y. Yang, Y. S. Lin, and C. C. Chen, "A 21-27 GHz CMOS Wideband LNA with 9.3±1.3 dB Gain and 103.9±8.1 ps Group-Delay Using Standard 0.18 m CMOS Technology," IET Electronics Letters, vol. 44, no. 17, pp. 1014-1016, 2008.
- [A87] J. F. Chang, Y. S. Lin, C. C. Chen, C. Z. Chen, T. Wang, and S. S. Lu, "A Miniature Micro- machined Millimeter-wave Bandpass Filter By CMOS Compatible ICP Deep-Trench Technology," Japanese Journal of Applied Physics, vol. 47, no. 1, 2008, pp. 68-73.
- [A88] H. B. Liang, Y. H. Tsou, Y. S. Lin, and C. C. Chen, "Uniformly Distributed Wideband Metal-Oxide-Semiconductor Field-Effect Transistor Model for Complementary Metal-Oxide-Semiconductor Radio-Frequency Integrated Circuits Applications," Japanese Journal of Applied Physics, vol. 47, no. 2, 2008, pp. 807-813.
- [A89] J. F. Chang, Y. S. Lin, C. C. Chen, C. Z. Chen, P. L. Huang, T. Wang, and S. S. Lu, "An Analysis of Substrate Effects on Transmission-Lines for Millimeter-wave CMOS RFIC Applications," Microwave and Optical Technology Letters, vol. 50, no. 2, pp. 319-324, Feb. 2008.
- [A90] C. C. Chen, Y. S. Lin, J. F. Chang, and J. H. Lee, "A K-Band Low-Noise Amplifier Using Shunt RC-Feedback and Series Inductive-Peaking Techniques," Microwave and Optical Technology Letters, vol. 50, no. 5, pp. 1148-1152, May 2008.
- [A91] J. H. Lee, C. C. Chen, and Y. S. Lin, "A High-Performance Wideband CMOS Low-Noise Amplifier Using Inductive Series and Parallel Peaking Techniques," Microwave and Optical Technology Letters, vol. 50, no. 5, pp. 1240-1244, May 2008.
- [A92] H. Y. Yang, Y. S. Lin, and C. C. Chen, "A Low-Power V-Band CMOS Low-Noise Amplifier Using Current-Sharing Technique," Microwave and Optical Technology Letters, vol. 50, no. 7, pp. 1876-1879, Jul. 2008.
- [A93] C. Z. Chen, H. Y. Fang, Y. S. Lin, C. C. Chen, and G. W. Huang, "A 5-GHz Fully Integrated Low-Power Wide-Tuning-Range CMOS LC VCO," Microwave and Optical Technology Letters, vol. 50, no. 9, pp. 2320-2322, Sep. 2008.
- [A94] W. L. Hsu, C. Z. Chen, and Y. S. Lin, "A Low-Power 63 GHz CMOS Direct Injection-Locked Frequency Divider in 0.13 mm CMOS Technology," Microwave and Optical Technology Letters, vol. 50, no. 10, pp. 2581-2584, Oct. 2008.
- [A95] J. H. Lee, C. C. Chen, and Y. S. Lin, "5.8-GHz Fully Integrated Low-Power Low-Phase- Noise CMOS LC VCOs Using RC Noise-Filtering Technique," Microwave and Optical Technology Letters, vol. 50, no. 11, pp. 2907-2911, Nov. 2008.
- [A96] P. L. Huang, T. Wang, Y. S. Lin, and S. S. Lu, "Micromachined CMOS E-band Bandpass Coplanar Filters," Microwave and Optical Technology Letters, vol. 50, no. 12, pp. 3123-3125, Dec. 2008.
- [A97] P. L. Huang, T. Wang, Y. S. Lin, S. S. Lu, Y. M. Teng, and G. W. Huang, "Micromachined 50 GHz/60 GHz Phi Filters by CMOS Compatible ICP Deep Trench Technology," Microwave and Optical Technology Letters, vol. 50, no. 12, pp. 3142-3146, Dec. 2008.
- [A98] Y. S. Lin, C. Z. Chen, H. B. Liang, and S. S. Lu, "High-Performance On-Chip Transformers with Partial Polysilicon Patterned Ground Shields (PGS)," IEEE Trans. on Electron Devices, vol. 54, no. 1, pp. 157-160, 2007.
- [A99] Y. S. Lin, C. C. Chen, H. B. Liang, P. K. Tsai, T. Wang, and S. S. Lu, "A High-Performance Micromachined RF Monolithic Transformer with Optimized Pattern Ground Shields (OPGS) for UWB RFIC Applications," IEEE Trans. on Electron Devices, vol. 54, no. 3, pp. 609-613, 2007.
- [A100] Y. T. Lin, H. C. Chen, T. Wang, Y. S. Lin, and S. S. Lu, "3-10 GHz Ultra-Wideband Low Noise Amplifiers Utilizing Miller Effect and Inductive Shunt-Shunt Feedback Technique," IEEE Trans. on Microwave Theory and Technologies, vol. 55, no. 9, pp. 1832-1843, 2007.
- [A101] Y. S. Lin, J. F. Chang, H. B. Liang, T. Wang, and S. S. Lu, "High-Performance Transmission-Line Inductors for 30-60 GHz RFIC Applications," IEEE Transactions on Electron Devices, vol. 54, no. 9, pp. 2512-2519, 2007.
- [A102] J. H. Lee, C. C. Chen, and Y. S. Lin, "A 0.18 mm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4 dB Gain and 100.7±17.4 ps Group-Delay," IEE Electronics Letters, vol. 43, no. 24, pp. 27-28.
- [A103] Y. S. Lin, C. C. Chen, H. B. Liang, T. Wang, and S. S. Lu, "Characterization and Modeling of Pattern Ground Shield (PGS) and Silicon-Substrate Effects on Radio-Frequency (RF) Monolithic Bifilar Transformers for Ultra-Wide Band (UWB) Radio-Frequency Integrated Circuit (RFIC) Applications," Japanese Journal of Applied Physics, vol. 46, no. 1A, pp. 65-70, 2007.
- [A104] T. Wang, Y. S. Lin, and S. S. Lu, "A Micromachined 22 GHz PI Filter by CMOS Compatible ICP Deep Trench Technology," IEE Electronics Letters, no. 7, vol. 43, pp. 398-399, 2007.
- [A105] Y. S. Lin, Z. H. Yang, C. C. Chen, and T. C. Chao, "Design and Implementation of a Miniaturized High-Linearity 3-5 GHz Ultra-wideband CMOS Low-Noise Amplifier," Microwave and Optical Technology Letters, vol. 49, no. 3, pp. 524-526, 2007.
- [A106] Y. S. Lin, C. C. Chen, H. B. Liang, M. S. Huang, "Analyses and Wideband Modeling (DC-to-50GHz) of Dummy Open Devices on Silicon for Accurate RF Devices and ICs De-embedding Applications," Microwave and Optical Technology Letters, vol. 49, no. 4, pp. 879-882, 2007.
- [A107] Y. S. Lin, C. C. Chen, H. B. Liang, P. F. Yeh, T. Wang, and S. S. Lu, "High-Performance Single-Turn Interlaced-Stacked Transformers for Ka-Band CMOS RFIC Applications," Microwave and Optical Technology Letters, vol. 49, no. 4, 2007, pp. 936-942.
- [A108] S. H. Yen, Y. S. Lin, and C. C. Chen, "Design and Implementation of a 1.5-to-17-GHz SiGe UWB LNA utilizing Multiple-Feedback Loops and Inductive Peaking Technique," Microwave and Optical Technology Letters, vol. 49, no. 4, 2007, pp. 876-879.
- [A109] Y. S. Lin, C. C. Chen, C. Z. Chen, and P. F. Yeh, "High-Coupling and Ultra-Low-Loss Interlaced Stacked Transformers for 60-100 GHz CMOS RFIC Applications," Microwave and Optical Technology Letters, vol. 49, no. 7, July 2007, pp. 1750-1753.
- [A110] S. H. Yen, C. Z. Chen, Y. S. Lin, and C. C. Chen, "A High-Performance 1-7 GHz UWB LNA Using Standard 0.18 mm CMOS Technology," Microwave and Optical Technology Letters, vol. 49, no. 10, Oct. 2007, pp. 2458-2462.
- [A111] J. F. Chang, Y. S. Lin, and C. C. Chen, "A High-Performance Miniaturized 3-15.5-GHz 13-dB CMOS Distributed Amplifier," Microwave and Optical Technology Letters, vol. 49, no. 11, Nov. 2007, pp. 2742-2747.
- [A112] Y. C. Yang, P. W. Lee, H. W. Chiu, Y. S. Lin, G. W. Huang, and S. S. Lu, "Reconfigurable SiGe Low Noise Amplifiers with Variable-Miller- Capacitance," IEEE Trans. on Circuits and Systems –I, vol. 53, no. 12, pp. 2567-2577, 2006.
- [A113] H. B. Liang, Y. S. Lin, C. C. Chen, P. F. Yeh, Y. R. Tzeng, T. Wang, and S. S. Lu, "An Analysis of Perfect-Magnetic-Coupling Ultra-Low-Loss Micromachined SMIS RF Transformers for RFIC Applications," IEEE Trans. on Microwave Theory and Techniques, vol. 54, no. 12, pp. 4256-4267, 2006.
- [A114] S. H. Yen, and Y. S. Lin, "A Ka-Band Low Noise Amplifier Using Standard 0.18 mm CMOS Technology," IEE Electronics Letters, vol. 42, no. 16, pp. 919-920, Aug. 2006.
- [A115] Y. S. Lin, H. B. Liang, C. C. Chen, T. Wang, and S. S. Lu, "A High-Quality-Factor and Low-Power-Loss Micromachined RF Bifilar Transformer for Ultra-Wideband (UWB) RFIC Applications," IEEE Electron Device Letters, vol. 27, no. 8, pp. 684-687, 2006.
- [A116] H. W. Chiu, Y. S. Lin, K. Liu, and S. S. Lu, "Temperature and Substrate Effects in Monolithic RF Inductors on Silicon with 6-mm-Thick Top Metal for RFIC Applications," IEEE Trans. on Semiconductor Manufacturing, vol. 19, no. 3, pp. 316-330, Aug. 2006.
- [A117] T. Wang, Y. S. Lin, and S. S. Lu, "An Ultra-Low-Loss and Broadband Micomachined RF Inductor for RFIC Input-Matching Applications," IEEE Trans. on Electron Devices, vol. 53, no. 3, pp. 568-570, 2006.
- [A118] T. Wang, C. H. Chen, Y. S. Lin, and S. S. Lu, "A Micro-machined 2-10 GHz CMOS Distributed Amplifier By CMOS Compatible ICP Deep Trench Technology," IEEE Electron Device Letters, vol. 27, no. 4, pp. 291-293, 2006.
- [A119] T. Wang, H. C. Chen, H. W. Chiu, Y. S. Lin, G. W. Huang, and S. S. Lu, "Micromachined CMOS LNA and VCO By CMOS Compatible ICP Deep Trench Technology," IEEE Trans. on Microwave Theory and Techniques, vol. 54, no. 2, pp. 580-588, 2006.
- [A120] Y. S. Lin, C. C. Chen, and S. S. Lu, "An Analysis of Base Bias Current and Intrinsic Base Resistance Effects on InP-InGaAs, InGaP-GaAs and SiGe Heterojunction Bipolar Transistors," Japanese Journal of Applied Physics, vol. 45, no. 5A, pp. 3949-3954, vol. 45, 2006.
- [A121] Y. S. Lin, and K. N. Liao, "A Concurrent Multi-Band InGaP-GaAs HBT LNA for 1.8/1.9 GHz GSM, 2.4/4.9/5.2/5.7 GHz WLAN and 5-7 GHz Ultra-Wide-Band (UWB) System Applications," Microwave and Optical Technology Letters, vol. 48, no. 1, pp. 110-114, 2006.
- [A122] Y. S. Lin, H. B. Liang, and Y. R. Tzeng, "An Analysis of Layout and Temperature Effects on Magnetic-Coupling Factor, Resistive-Coupling Factor, and Power Gain Performances of RF Transformers for RFIC Applications," Microwave and Optical Technology Letters, vol. 48, no. 8, pp. 1460-1466, 2006.
- [A123] Y. S. Lin, "Implementation of Perfect-Magnetic-Coupling Ultra-Low-Loss Transformer in RFCMOS Technology," IEEE Electron Device Letters., vol. 26, no.11, pp. 832-835, 2005.
- [A124] Y. S. Lin, "An Analysis of Small-Signal Source-Body Resistance Effect on RF MOSFETs for Low-Cost System-on-Chip (SoC) Applications," IEEE Trans. on Electron Devices, vol. 52, no. 7, pp. 1442-1451, 2005.
- [A125] Y. S. Lin, "Temperature and Substrate-Impedance Dependence of Noise Figure of Monolithic RF Inductors on Silicon," IEEE Electron Device Letters, vol. 26, no. 6, pp. 397-400, 2005.
- [A126] Y. S. Lin, H. B. Liang, T. Wang, and S. S. Lu, "Temperature-Dependence of Noise Figure of Monolithic RF Transformers on a Thin (20 mm) Silicon Substrate," IEEE Electron Device Letters, vol. 26, no. 3, pp. 208-211, 2005.
- [A127] Y. S. Lin, and S. S. Lu, "An Analysis of Base Bias Current Effect on SiGe Heterojunction Bipolar Transistors (HBTs)," IEEE Trans. on Electron Devices, vol. 52, no. 1, pp. 132-135, 2005.
- [A128] H. W. Chiu, S. S. Lu, and Y. S. Lin, "A 2.17 dB NF, 5 GHz Band Monolithic CMOS LNA with 10 mW DC Power Consumption on a Thin (20 mm) Substrate," IEEE Trans. on Microwave Theory and Techniques, vol. 53, no. 3, pp. 813-824, 2005.
- [A129] S. S. Lu, Y. S. Lin, H. W. Chiu, Y. C. Chen, and C. C. Meng, "The Determination of S parameters from the Poles of Voltage Gain Transfer Function for RF IC Design," IEEE Trans. on Circuits and Systems - I, vol. 52, no.1, pp. 1-9, 2005.
- [A130] Y. S. Lin, J. L. Chen, and K. H. Chen, "Variable Inductance Planar Spiral Inductors And CMOS Wideband Amplifiers with Inductive Peaking," Microwave and Optical Technology Letters, vol. 47, no. 4, pp. 305-309, 2005.
- [A131] Y. S. Lin, and K. N. Liao, "A Concurrent Multi-Band SiGe LNA for 1.8/1.9GHz GSM, 2.4/5.2/5.7GHz WLAN and 5-7 GHz Ultra-Wide-Band (UWB) System Applications," Microwave and Optical Technology Letters, vol. 47, no. 1, pp. 36-41, 2005.
- [A132] Y. S. Lin, "Temperature Dependence of the Power Gains and Scattering Parameters S11 and S22 of an RF nMOSFET with an Advanced RF-CMOS Technology," Microwave and Optical Technology Letters, vol. 44, no. 2, pp. 180-185, 2005.
- [A133] C. L. Tai, S. S. Lu, and Y. S. Lin, "A 5.2 GHz Low-Power Low-Noise Amplifier Using InGaP-GaAs HBT Technology," Microwave and Optical Technology Letters, vol. 45, no. 5, pp. 425-427, 2005.
- [A134] Y. S. Lin, and C. C. Chen, "A High-Linearity Micro-mixer for 5-GHz Band WLAN Applications Using 0.35 mm SiGe BiCMOS Technology," Microwave and Optical Technology Letters, vol. 45, no. 6, pp. 499-502, 2005.
- [A135] K. Y. Yeh, S. S. Lu, and Y. S. Lin, "Monolithic InGaP-GaAs HBT Receiver Front-End with 6 mW DC Power Consumption for 5-GHz-Band WLAN Applications," IET Electronics Letters, vol. 40, no. 24, pp. 1542-1543, 2004.
- [A136] Y. S. Lin, "An Analysis of Size Effect on the Performances of Low-leakage 0.10 mm CMOS for 5-GHz Band Low-Power RF-ICs and SRAMs Applications," Japanese Journal of Applied Physics, vol. 43, no. 8A, pp. 5178-5185, 2004.
- [A137] Y. S. Lin, and S. S. Lu, "An Analysis of the Anomalous Dip in Scattering Parameter S11 of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)," Japanese Journal of Applied Physics, vol. 43, no. 6B, pp. L803-L805, 2004.
- [A138] Y. S. Lin, and T. H. Lee, "Analysis, Design, and Optimization of Matched-Impedance Wide-Band Amplifiers With Multiple Feedback Loops Using 0.18 m CMOS Technology," Japanese Journal of Applied Physics, vol. 43, no. 10, pp. 6912-6916, 2004.
- [A139] Y. S. Lin, "Temperature-Dependence of the Q-Factor and Noise Figure (NF) Performances of a Spiral Inductor with an Advanced Mixed-Signal/RF Complementary Metal-Oxide-Semiconductor (CMOS) Technology," Japanese Journal of Applied Physics, vol. 43, no. 10, pp. 6907-6911, 2004.
- [A140] C. Y. Wang, S. S. Lu, C. C. Meng, and Y. S. Lin, "A GaInP/GaAs HBT Micromixer for 2.4/5.2/5.7 Multi-band WLAN Applications," Microwave and Optical Technology Letters, vol. 43, no. 1, pp. 87-89, Oct. 5, 2004.
- [A141] Y. S. Lin, and C. C. Chen, "An InGaP-GaAs HBT Low Noise Amplifier for 2.4/5.2/5.7 GHz WLAN Applications," Microwave and Optical Technology Letters, vol. 43, no. 6, pp. 539-542, Dec. 20, 2004.
- [A142] T. H. Lee, and Y. S. Lin, "A 3 mW Concurrent 2.4/5.2 GHz Dual-Band Low Noise Amplifier for WLAN Applications in 0.18 m CMOS Technology," Microwave and Optical Technology Letters, vol. 42, no. 4, pp. 287-292, August 20, 2004.
- [A143] C. Y. Wang, S. S. Lu, C. C. Meng, and Y. S. Lin, "A SiGe Micromixer for 2.4/5.2/5.7 GHz Multi-band WLAN Applications," Microwave and Optical Technology Letters, vol. 41, no. 5, pp. 343-346, June 5, 2004.
- [A144] S. S. Lu, Y. S. Lin, and B. W. Lee, "A Monolithic 1.57/5.25 GHz Concurrent Dual-Band Low Noise Amplifier Using InGaP/GaAs HBT Technology," Microwave and Optical Technology Letters, vol. 42, no. 1, pp. 58-60, July 5, 2004.
- [A145] K. N. Liaw, and Y. S. Lin, "A Miniaturized Monolithic 2.4/5.7 GHz Concurrent Dual-Band Low Noise Amplifier Using InGaP-GaAs HBT Technology," WSEAS Trans. on Electronics, vol. 1, no. 1, pp. 120-123, 2004.
- [A146] H. B. Liang, T. Wang, Y. S. Lin, S. H. Wu, and S. S. Lu, "Temperature Dependence of Q and Noise in Monolithic Transformer Fabricated in a Silicon-Germanium/BiCMOS Technology," WSEAS Trans. on Electronics, vol. 1, no. 1, pp. 149-156, 2004.
- [A147] Y. S. Lin, H. W. Choi, and S. S. Lu, "High Quality-Factor (33) and High Resonant Frequency (> 20 GHz) Spiral Inductors Fabricated in 0.25 mm RF Mixed-Signal CMOS Technology," Microwave and Optical Technology Letters, vol. 41, no. 4, pp. 279-285, May 20, 2004.
- [A148] Y. S. Lin, "An Analysis of RF Scattering Parameters, Noise and Power Performances of RF Power MOS in 0.15 mm RF CMOS Technology for RF SOC Applications," Microwave and Optical Technology Letters, vol. 41, no. 3, pp. 191-196, May 5, 2004.
- [A149] Y. S. Lin, C. C. Chen, and S. S. Lu, "Ga0.51In0.49P/InxGa1-xAs/GaAs Doped-Channel FETs (DCFETs) and their Applications on Monolithic Microwave Integrated Circuits (MMICs)," Microwave and Optical Technology Letters, vol. 39, no. 1, pp. 56-62, 2003.
- [A150] Y. S. Lin and S. S. Lu, "An Analysis of Small-Signal Gate-Drain Resistance Effect on RF Power MOSFETs," IEEE Trans. on Electron Devices, vol. 50, no. 2, pp. 525-528, 2003.
- [A151] H. Y. Tu, T. H. Chou, Y. S. Lin, H. C. Chiu, P. Y. Chen, and S. S. Lu, "DC and RF Characteristics of E-mode Ga0.51In0.49P/In0.15Ga0.85As Pseudomorphic HEMT’s (pHEMT’s)," IEEE Electron Device Letters, vol. 50, no. 3, pp. 132-134, 2003.
- [A152] Y. S. Lin and S. S. Lu, "An analysis of Small-Signal Substrate Resistance Effect in Deep Sub-micron RF MOSFETs," IEEE Trans. on Microwave Theory and Techniques, vol. 51, no. 5, pp. 1534-1539, 2003.
- [A153] Y. S. Lin, "Low-leakage 0.11 mm CMOS for Low-Power RF-ICs and SRAMs Applications," Japanese Journal of Applied Physics, vol. 42, no. 4B, pp. 2114-2118, 2003.
- [A154] Y. S. Lin, and S. S. Lu, "Theoretical Analysis of the Anomalous Dips of Scattering Parameter S22 in Deep Sub-Micrometer MOSFETs," Microwave and Optical Technology Letters, vol. 36, no. 3, pp. 193-200, Feb. 5, 2003.
- [A155] Y. S. Lin, and S. S. Lu, "An Analysis of the Kink Phenomenon of Scattering Parameter S22 in RF Power MOSFETs for System-on-Chip (SOC) Applications," Microwave and Optical Technology Letters, vol. 36, no. 5, pp. 371-376, 2003.
- [A156] Y. S. Lin, "A novel Y-Shaped Multi-Fin Stacked Capacitor for Dynamic Random Access Memory (DRAM) cells," National Chi-Nan University Journal, vol. 6, no. 2, pp. 203-212, 2003.
- [A157] Y. S. Lin, C. C. Wu, C. S. Chang, R. P. Yang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "Leakage Scaling in Deep Sub-micron CMOS for SOC," IEEE Trans. on Electron Devices, vol. 49, no. 6, pp. 1034-1041, 2002.
- [A158] Y. S. Lin, H. T. Huang, C. C. Wu, Y. K. Leung, H. Y. Pan, T. E. Chang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "On the SiO2 Based Gate-Dielectric Scaling Limit for Low-Standby Power Applications in the Context of a 0.13 m CMOS Logic Technology," IEEE Trans. on Electron Devices, vol. 49, no. 3, 442-448, 2002.
- [A159] Y. S. Lin, and H. M. Hsu, "Study of Spiral Inductors Using Cu/Low-k Interconnect for High-Performance RF-IC Applications," Microwave and Optical Technology Letters, vol. 34, no. 1, pp. 43-48, July 5, 2002.
- [A160] Y. S. Lin, and H. M. Hsu, "High-Performance Micromachined Tapered Spiral Inductors with Resonant Frequency of 17 GHz," Microwave and Optical Technology Letters, vol. 35, no. 1, pp. 56-60, October 5, 2002.
- [A161] H. Y. Tu, Y. S. Lin, P. Y. Chen, S. S. Lu, and H. Y. Pan, "An Analysis of the Anomalous Dip in Scattering Parameter S22 of InGaP-GaAs Heterojunction Bipolar Transistors (HBTs)," IEEE Trans. on Electron Devices, vol. 49, no. 10, pp. 1831-1833, 2002.
- [A162] Y. S. Lin, and S. S.Lu, "S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFETs as Active Devices," Microwave and Optical Technology Letters, vol. 20, no. 3, pp. 188-190, 1999.
- [A163] Y. S. Lin, and S. S.Lu, "Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect Transistors Grown by Gas Source Molecular Beam Epitaxy," Journal of Applied Physics, vol. 85, no. 4, pp. 2197-2201, 1999.
- [A164] S. S. Lu, C .C. Meng, Y. S. Lin, and H. Lan, "The Effect of Gate Recess Profile on Device Performance of Ga0.51In0.49P/In0.2Ga0.8As Doped-Channel FET’s," IEEE Trans. on Electron Devices, vol. 46, no. 1, pp. 48-54, 1999.
- [A165] Y. S. Lin, S. S. Lu and Y. J. Wang, "High-Performance Ga0.51In0.49P/GaAs Airbridge Gate MISFET’s Grown by Gas-Source MBE," IEEE Trans. on Electron Devices, vol. 44, no. 6, pp. 518-520, 1997.
- [A166] Y. S. Lin, T. P. Sun and S. S. Lu, "Ga0.51In0.49P/In0.15Ga0.85As/GaAs Pseudomorphic Doped-Channel FET with High-Current Density and High-Breakdown Voltage," IEEE Electron Device Letters, vol. 18, no. 4, pp. 150-152, 1997.
- [A167] Y. S. Lin, and S. S. Lu, "High-Breakdown-Voltage Ga0.51In0.49P Channel MESFET Grwon by GSMBE," IEEE Electron Device Letters, vol. 17, no. 9, pp. 452-454, 1996.
- [A168] Y. S. Lin, S. S. Lu and T. P. Sun, "High-Linearity High-Current-Drivability Ga0.51In0.49P/GaAs MISFET Using GaInP Airbridge Gate Structure Grown by Gas-Source MBE," IEEE Electron Device Letters, vol. 16, no. 11, pp. 518-520, 1995.
- [A169] Y. S. Lin, C. J. Chen, G. Y. Wu and K. M. Hung, "Magneto-Excitons in Quantum Wells in Parallel-Field Configurations," Solid State Communications, vol. 84, no. 7, pp. 753-756, 1992.
- B、Conference Papers (會議論文)
[2014]
- [B1] Y. S. Lin, and G. H. Li, "A W-Band Down-Conversion Mixer in 90 nm CMOS with Excellent Matching and Port-to-Port Isolation for Automotive Radars," 2014 Eleventh International Symposium on Wireless Communication Systems (ISWCS), Barcelona, Spain.
- [B2] Y. S. Lin, C. C. Wang, W. C. Wen, and T. M. Tsai, "A 12.1 mW 50~67 GHz Up-Conversion Mixer with 6 dB Conversion Gain and 30.7 dB LO-RF Isolation in 90 nm CMOS," 2014 IEEE Radio and Wireless Symposium, Newport Beach, California, USA.
- [B3] Y. S. Lin, C. C. Wang, and J. H. Lee, "A 9.96 mW 3.24±0.5 dB NF 1.9~22.5 GHz Wideband Low-Noise Amplifier Using 90 nm CMOS Technology," 2014 IEEE Radio and Wireless Symposium, Newport Beach, California, USA.
- [B4] Y. S. Lin, G. L. Lee, C. C. Wang, and C. C. Chen, "A 21.1 mW 6.2 dB NF 77~81 GHz CMOS Low-Noise Amplifier with 13.5±0.5 dB S21 and Excellent Input and Output Matching for Automotive Radars," 2014 IEEE Radio and Wireless Symposium, Newport Beach, California, USA.
- [B5] Y. S. Lin, C. Y. Lee, C. C. Wang, and C. C. Chen, "A 10 mW 8.1 dB NF 77~81 GHz CMOS Low-Noise Amplifier with 11.3±0.5 dB S21 and Excellent Input and Output Matching for Automotive Radars," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-04, Hsinchu, Taiwan.
- [B6] G. H. Li, Y. S. Lin, and C. C. Chen, "A 79 GHz Down-Conversion Mixer with Negative Resistance Compensation in 90 nm CMOS," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-08, Hsinchu, Taiwan.
- [B7] L. C. Liu, and Y. S. Lin, "Design and Implementation of a High-Performance W-Band Up-Conversion Mixer in 90 nm CMOS," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-09, Hsinchu, Taiwan.
- [B8] Y. S. Lin, F. C. Liu, W. C. Wen, and C. C. Wang, "Design and Implementation of Squared W-Band CMOS Marchand Balun for W-Band Communication Systems," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-10, Hsinchu, Taiwan.
- [B9] B. H. Liu, Y. S. Lin, and C. C. Wang, "Design of Sigma-Delta DAC for Intra-Body Communication (IBC) Platform Application," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-11, Hsinchu, Taiwan.
- [B10] K. L. Lin, and Y. S. Lin, "Filterless Class-D Audio Power Amplifier (PA) with Multi-Level Converter for Implementation of Intra-Body Communication (IBC) Hub/Alarm Unit in IBC Platform for Fall Prevention System," Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT), HF-13, Hsinchu, Taiwan.
- [B11] R. C. Liu, Y. S. Lin, W. C. Wen, and C. C. Wang, "Design and Implementation of a High-Performance 79 GHz Up-Conversion Mixer in 90 nm CMOS," 2013 National Symposium on Telecommunications, E4-3, Tainan, Taiwan.
- [B12] Y. S. Lin, C. C. Wang, Y. C. Liao, and S. S. Lu, "BFSK Receiver, and Audio DAC and PA in Hub/Alarm Unit of Intra-Body Communication (IBC) Platform for Fall Prevention System," The 12th International Conference on Automation Technology, pp. 131-138, Tainan, Taiwan.
- [B13] J. F. Chang, Y. S. Lin, and C. C. Wang, "A High-Voltage Driving 60 GHz Power Amplifier with Psat of 13 dBm and PAE of 9.1% in 90 nm CMOS for IEEE 802.11ad Communication Systems," 2013 IEEE International Symposium on Electromagnetic Compatibility, Denver, Colorado, USA.
- [B14] C. C. Wang, T. M. Tsai, Y. S. Lin, and W. C. Wen, " A Low Power and High Conversion Gain 60-GHz CMOS Up-Conversion Mixer Using Current Injection and Dual Negative Resistance Compensation Techniques," 2013 IEEE International Symposium on Electromagnetic Compatibility, Denver, Colorado, USA.
- [B15] C. C. Wang, Y. S. Lin, and J. H. Lee, "60 GHz CMOS Down-Conversion Mixer with 15.46 dB Gain and 64.7 dB LO-RF Isolation," 2013 IEEE International Symposium on Antennas and Propagation and USNC-URSI National Radio Science Meeting, Orlando, Florida, USA.
- [B16] J. H. Lee, and Y. S. Lin, "A 3.88-dB NF 60-GHz CMOS UWB LNA with 14.1-mW DC Power Consumption," 2013 IEEE International Symposium on Antennas and Propagation and USNC-URSI National Radio Science Meeting, Orlando, Florida, USA.
- [B17] P. Y. Yin, Y. H. Chen, C. W. Lu, S. S. Shyu, C. L. Lee, T. C. Ou, and Y. S. Lin, "A Multi-Stage Fault-Tolerant Multiplier with Triple Module Redundancy (TMR) Technique," IEEE Fourth International Conference on Intelligent Systems, Modelling and Simulation (ISMS), Bangkok, Thailand.
- [B18] P. Y. Yin, C. W. Lu, C. Y. Hsu, and Y. S. Lin, "An 11-bit Two-Stage Hybrid-DAC for TFT LCD Column Drivers," IEEE Fourth International Conference on Intelligent Systems, Modelling and Simulation (ISMS), Bangkok, Thailand.
- [B19] Y. S. Lin, and C. C. Wang, "A 24-GHz Power Amplifier with Psat of 15.9 dBm and PAE of 14.6% Using Standard 0.18 μm CMOS Technology," Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT), HF-01, Hsinchu, Taiwan.
- [B20] J. N. Chang, Y. S. Lin, and C. C. Wang, "A High-Performance CMOS Power Amplifier for 60 GHz Short-Range Communication Systems," Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT), HF-02, Hsinchu, Taiwan.
- [B21] C. H. Wu, Y. S. Lin, and C. C. Wang, "A 3.1~10.6 GHz Current-Reused CMOS Ultra-Wideband Low-Noise Amplifier Using Self-Forward Body Bias and Forward Combining Techniques," Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT), HF-03, Hsinchu, Taiwan.
- [B22] Y. H. Wang, C. C. Wang, and Y. S. Lin, "A 3.1-10.6 GHz CMOS Wide Band LNA Using Standard 0.18 μm CMOS Technology," Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT), HF-04, Hsinchu, Taiwan.
- [B23] C. H. Wu, Y. S. Lin, J. H. Lee, C. C. Wang, "A 2.87±0.19 dB NF 3.1-10.6 GHz Ultra-Wideband Low-Noise Amplifier Using 0.18 m CMOS Technology," 2012 IEEE Radio and Wireless Symposium, Santa Clara, California, USA, pp. 227-230.
- [B24] J. F. Chang, Y. S. Lin, J. H. Lee, C. C. Wang, "A Low-Power 3.2-9.7 GHz Ultra-Wideband Low Noise Amplifier with Excellent Stop-Band Rejection Using 0.18 mm CMOS Technology," 2012 IEEE Radio and Wireless Symposium, Santa Clara, California, USA, pp. 199-202.
- [B25] J. H. Lee, T. M. Tsai, and Y. S. Lin, "15.1 mW 60 GHz Up-Conversion Mixer with 4.5 dB Gain and 57.5 dB LO-RF Isolation," 2012 National Symposium Telecommunications, Section S1-5, paper 1142, Changhua, Taiwan.
- [B26] J. H. Lee, Y. C. Chen, Y. S. Lin, and S. S. Lu, "A 21-27 GHz CMOS Receiver Front-End with a Novel Double-Balanced Mixer and Integrated Balun for Automotive Radar Systems," Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT), HF-02, Hsinchu, Taiwan.
- [B27] C. C. Wang, Y. S. Lin, and P. W. Yu, "A 28/56 GHz Dual-Band CMOS VCO Using Reversely Tunable LC Source-Degeneration and the Push-Push Technique," Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT), HF-02, Hsinchu, Taiwan.
- [B28] J. H. Lee, J. F. Chang, and Y. S. Lin, "A 3.15 dB NF, 7.2 mW 3~9 GHz Ultra-Wideband Receiver Front-End for UWB Systems Using 0.18 mm CMOS Technology," Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT), HF-02, Hsinchu, Taiwan.
- [B29] C. C. Wang, Y. S. Lin, and P. W. Yu, "A Miniature and Low-Power 24 GHz CMOS VCO Using Tunable LC Source-Degeneration and Transformer Feedback Techniques for Automotive Radars," Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT), HF-02, Hsinchu, Taiwan.
- [B30] C. C Wang, C. Y. Lin, C. H. Cheng, and Y. S. Lin, "1-dB Insertion-Loss 1~14.3 GHz Ultra-Wideband Bandpass Filter Using Standard 0.18-mm CMOS Technology," 2011 International Conference on Electrical and Control Engineering, Yichang, China, pp. 1-4.
- [B31] S. L. Huang, Y. S. Lin, and J. H. Lee, "A Low-Power and Low-Noise 21~29 GHz Ultra-Wideband Receiver Front-End in 0.18 m CMOS Technology," 2011 IEEE Custom Integrated Circuits Conference, San Jose, California, USA, pp. 1-4.
- [B32] J. F. Chang, and Y. S. Lin, "A DC-10.5-GHz CMOS Distributed Amplifier with 3.2±0.3 dB NF, 10.5±1.4 dB Gain and ±13.8 ps Group Delay Variation," to appear in Proceedings of 2011 IEEE Radio and Wireless Symposium (2011 IEEE RWS), Phoenix, Arizona, USA, pp. 307-310.
- [B33] J. F. Chang, and Y. S. Lin, "2.76 mW, 3-10 GHz Ultra-Wideband LNA Using 0.18 μm CMOS Technology," Proceedings of 2011 IEEE VLSI Design, Automation and Test (2011 VLSI DAT), Hsin-Chu, Taiwan, pp. 188-191.
- [B34] C. Z. Wang, C. C. Wang, Y. S. Lin, and G. W. Huang, "A 2.28 mW 80.8 GHz CMOS Divide-by-4 DILFD with 18.24% Locking Range Using Tunable LC Source-Degeneration," Proceedings of 2011 IEEE VLSI Design, Automation and Test (2011 VLSI DAT), Hsin-Chu, Taiwan, pp. 307-310.
- [B35] C. C. Chen, Y. S. Lin, J. H. Lee, and J. F. Chang, "A V-band CMOS Sub-Harmonic Mixer with Integrated Frequency Doubler and 180o Out-of-Phase Splitter," Proceedings of 2011 IEEE VLSI Design, Automation and Test (2011 VLSI DAT), Hsin-Chu, Taiwan, pp. 192-195.
- [B36] J. F. Chang, and Y. S. Lin, "A 0.99 mW 3-10 GHz CG CMOS UWB LNA Using T-match Input Network and Self-Body-Bias Technique," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-02, Hsinchu, Taiwan.
- [B37] C. C. Wang, C. Z. Chen, and Y. S. Lin, "A 3.55 mW 80 GHz CMOS Direct Injection-Locked Frequency Divider with 26.3% Locking Range Using Distributed LC Tank and Body Bias Techniques," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-04, Hsinchu, Taiwan.
- [B38] J. F. Chang, and Y. S. Lin, "A 3.9 dB NF, 24.5 dB Gain 0.3~10.5 GHz Distributed Amplifier Using Dual-Inductive-Peaking Cascade Gain Cell for UWB Systems in 0.18 mm CMOS," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-05, Hsinchu, Taiwan.
- [B39] T. E. Hsu, Y. S. Lin, and S. L. Huang, "A Low-Power and High-Gain K-Band Receiver Front-End in 0.18 mm RF CMOS Technology," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-10, Hsinchu, Taiwan.
- [B40] C. C. Wang, C. Z. Chen, and Y. S. Lin, "A Wide-Locking-Range Divide-by-3 Injection-Locked Frequency Divider Using Differential-Injection Linear Mixers and Dual Frequency-Tuning," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-13, Hsinchu, Taiwan.
- [B41] Y. C. Chen, C. H. Wang, and Y. S. Lin, "Design and Implementation of Front-End for 24 GHz Adaptive Cruise Control Radar System Application," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-18, Hsinchu, Taiwan.
- [B42] T. Y. Kuo, and Y. S. Lin, "UHF 915 MHz OOK Demodulator for RFID Transponder Applications," Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT), HF-26, Hsinchu, Taiwan.
- [B43] Y. H. Chen, Y. R. Chen, J. C. Liu, J. W. Lin, K. H. Hung, C. Y. Hsu, Y. S. Lin, "Enhancement Performance of Amorphous SiGe Single Junction Solar Cells by Post-deposition Thermal Annealing to Overcome S-curve Character," TACT 2011 International Thin Films Conference, Nov. 20-23, Kenting, Taiwan.
- [B44] C. C. Chen, Y. S. Lin, P. L. Huang, J. F. Chang, and S. S. Lu, "A 4.9-dB NF 53.5-62-GHz Micro-machined CMOS Wideband LNA with Small Group-Delay-Variation," Proceedings of 2010 IEEE International Microwave Symposium (2010 IEEE IMS), Anaheim, California, USA, pp. 489-492.
- [B45] C. C. Chen, J. H. Lee, and Y. S. Lin, "A 60 GHz CMOS Receiver Front-End with Integrated 180o Out-of-Phase Wilkinson Power Divider," Proceedings of 2010 IEEE Radio Frequency Integrated Circuits Symposium (2010 IEEE RFIC Symposium), Anaheim, California, USA, pp. 373-376.
- [B46] Y. T. Chiu, Y. S. Lin, and J. F. Chang, "A 18.85 mW 20-29 GHz Wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB Gain," Proceedings of 2010 IEEE Radio Frequency Integrated Circuits Symposium (2010 IEEE RFIC Symposium), Anaheim, California, USA, pp. 381-384.
- [B47] J. G. Chen, C. C. Chen, and Y. S. Lin, "An OOK Transmitter for Bio-Sensor WSN Application," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), pp. 76, Hsinchu, Taiwan.
- [B48] C. C. Chen, Y. S. Lin, and G. W. Huang, "A Low Power and High Gain 21 GHz Receiver Front-End in 0.18 mm RF CMOS Technology," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), pp. 78, Hsinchu, Taiwan.
- [B49] C. Z. Chen, W. L. Hsu, Y. S. Lin, and G. W. Huang, "Q-Band Divide-by-3 Direct Injection-Locked Frequency Divider in CMOS 0.13-mm Technology," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-08, Hsinchu, Taiwan.
- [B50] C. Z. Chen, C. C. Wang, Y. S. Lin, and G. W. Huang, "1 V Ka-Band Low-Power and Wide-Locking Range CMOS Divide-by-4 Direct Injection- Locked Frequency Dividers," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-16, Hsinchu, Taiwan.
- [B51] S. L. Hwang, C. C. Chen, Y. S. Lin, and G. W. Hwang, "A 21-29 GHz CMOS Wideband LNA with 3.2-4.5 dB Noise Figure Using Standard 0.13 mm Technology," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-02, Hsinchu, Taiwan.
- [B52] C. C. Wang, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A Ka-Band Low-Voltage and Wide-Locking Range CMOS Divide-by-4 Direct Injection-Locked Frequency Dividers in CMOS 0.18-mm Technology," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), pp. 41, Hsinchu, Taiwan.
- [B53] C. H. Wang, Y. T. Chiu, and Y. S. Lin, "A 3.2 dB NF 21-29 GHz Wideband LNA Using Current-Reuse technique," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-03, Hsinchu, Taiwan.
- [B54] C. H. Wang, H. Y. Yang, C. C. Chen, and Y. S. Lin, "Application of RF Receiver Front-End for 24 GHz Short-Range Radar System," Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT), HF-17, Hsinchu, Taiwan.
- [B55] W. L. Hsu, C. Z. Chen, Y. S. Lin, and C. C. Chen, "A 2 mW, 55.8-GHz CMOS Injection-Locked Frequency Divider with 7.1-GHz Locking Range," Proceedings of 2009 IEEE Radio and Wireless Symposium (2009 IEEE RWS), San Diego, California, USA, pp. 582-585.
- [B56] C. C. Chen, H. Y. Yang, and Y. S. Lin, "A 21-27 GHz CMOS Wideband LNA with 9.3±1.3 dB Gain and 103.9±8.1 ps Group-Delay Using Standard 0.18 μm CMOS Technology," Proceedings of 2009 IEEE Radio and Wireless Symposium (2009 IEEE RWS), San Diego, California, USA, pp. 586-589.
- [B57] Y. S. Lin, T. H. Chang, C. Z. Chen, C. C. Chen, H. Y. Yang, and S. S. Wong, "Low-Power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz Dual-Conversion Receiver," Proceedings of 2009 IEEE VLSI Design, Automation and Test (2009 VLSI DAT), Hsin-Chu, Taiwan, pp. 88-91.
- [B58] C. W. Tsou, C. C. Chen, and Y. S. Lin, "A 57-GHz CMOS VCO with 56% Tuning-Range Enhancement Using Tunable Capacitive Source- Degeneration Technique," Proceedings of 2009 IEEE VLSI Design, Automation and Test (2009 VLSI DAT), Hsin-Chu, Taiwan, pp. 146-149.
- [B59] M. C. Lu, J. F. Chang, L. C. Lu, and Y. S. Lin, "Miniature 60-GHz-Band Bandpass Filter with 2.55-dB Insertion-Loss Using Standard 0.13 mm CMOS Technology," Proceedings of 2009 IEEE VLSI Design, Automation and Test (2009 VLSI DAT), Hsin-Chu, Taiwan, pp. 92-95.
- [B60] J. F. Chang, Y. S. Lin, P. L. Huang, and S. S. Lu, "A Micromachined V-Band CMOS Bandpass Filter with 2-dB Insertion-Loss Department," Proceedings of 2009 IEEE Electronic Components and Technology Conference (2009 IEEE ECTC), San Diego, California, USA, pp. 1590-1593.
- [B61] W. L. Hsu, C. Z. Chen, Y. S. Lin, and J. F. Chang, "A 9.3-GHz-Tuning-Range, 58-GHz CMOS Direct Injection-Locked Frequency Divider Using Input-Power-Matching Technique," Proceedings of 2009 IEEE Electronic Components and Technology Conference (2009 IEEE ECTC), San Diego, California, USA, pp. 1846-1849.
- [B62] M. C. Lu, J. F. Chang, L. C. Lu, and Y. S. Lin, "1.75-dB Insertion-Loss UWB BP-Filter with Finite Transmission Zeros Using Standard 0.18 μm CMOS Technology," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B63] Y. T. Chiu, J. F. Chang, and Y. S. Lin, "X-Band Low Noise Amplifier using 0.18 μm CMOS Technology," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B64] C. Z. Chen, T. Y. Chen, Y. S. Lin, and G. W. Huang, "A Low-Power Excellent Sensitivity 64.76 GHz CMOS Injection-Locked Frequency Divider Using Shunt-Peaking Technique," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B65] A. C. Hsu, C. C. Chen, and Y. S. Lin, "A 24 GHz Down Conversion Mixer Using 0.18 mm CMOS Technology," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B66] C. W. Tsou, C. C. Chen, and Y. S. Lin, "An Ultra Wideband Double-Balanced Mixer in 0.13 mm RF CMOS Technology," Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B67] H. C. Chung, C. C. Chen, and Y. S. Lin, "0.18 m CMOS UWB LNA with high gain and 3.5-4.7 dB noise figure", Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT), Hsinchu, Taiwan.
- [B68] J. F. Chang, Y. S. Lin, C. C. Chen, C. Z. Chen, T. Wang, and S. S. Lu, "A Miniature Micro-machined Millimeter-wave Bandpass Filter By CMOS Compatible ICP Deep-Trench Technology," Proceedings of 2008 IEEE Radio and Wireless Symposium (2008 IEEE RWS), Orlando, Florida, USA, pp. 399-402.
- [B69] A. Chen, H. B. Liang, Y. Baeyens, Y. K. Chen, and Y. S. Lin, "A Broadband Millimeter-Wave Low-Noise Amplifier in SiGe BiCMOS," Proceedings of 2008 IEEE Si Monolithic Integrated Circuits in RF Systems, Orlando, Florida, USA, pp. 86-89.
- [B70] J. H. Lee, C. C. Chen, H. Y. Yang, and Y. S. Lin, "A 2.5-dB NF 3.1-10.6-GHz CMOS UWB LNA with Small Group-Delay-Variation," Proceedings of 2008 IEEE Radio Frequency Integrated Circuits Symposium (2008 IEEE RFIC Symposium), Atlanta, Georgia, USA., 501-504.
- [B71] A. Chen, H. B. Liang, Y. Baeyens, J. Lin, Y. K. Chen, and Y. S. Lin, "Wideband Mixed Lumped-distributed-element 90° and 180° Power Splitters on Silicon Substrate for Millimeter-wave Applications," Proceedings of 2008 IEEE Radio Frequency Integrated Circuits Symposium (2008 IEEE RFIC Symposium), Atlanta, Georgia, USA, pp. 449-452.
- [B72] H. Y. Yang, Y. S. Lin, C. C. Chen, and S. S. Wong, "A Low-Power V-Band CMOS Low-Noise Amplifier Using Current-Sharing Technique," Proceedings of 2008 IEEE International Symposium on Circuits and Systems (2008 IEEE ISCAS), Seattle, Washington, USA, pp. 964-967.
- [B73] P. K. Tsai, T. H. Huang, and Y. S. Lin, "Integration of CMOS VCO and frequency divider for ku-band low-power frequency synthesizer," 3rd International Conf. on Innovative Computing, Information and Control (ICICIC2008), Dalian, China, Jun. 2008, pp. 235-238.
- [B74] C. C. Hsiao, C. Z. Chen, and Y. S. Lin, "A Low-Power CDR for Wireless Sensor Network Applications", Proceedings of 2008 RFID Conference, Taipei, Taiwan.
- [B75] C. C. Chen, Y. H. Chou, Y. S. Lin, and J. G. Chen, "A CMOS OOK Transceiver for RFID Applications", Proceedings of 2008 RFID Conference, Taipei, Taiwan.
- [B76] W. L. Hsu, C. Z. Chen, and Y. S. Lin, "A Ka-band Injection-Locked Frequency Divider Using Shunt-Peaking Technique," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B77] F. C. Chang, C. Z. Chen, and Y. S. Lin, "Ka band Wide Locked Range Frequency Divider," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B78] C. C. Hsiao, C. Z. Chen, and Y. S. Lin, "A Low Data Rate CDR for bio-sensor receiver application," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B79] T. H. Chang, C. Z. Chen, and Y. S. Lin, "On the use of inversion-mode MOS Varactors for Ka band VCO," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B80] J. H. Lee, C. C. Chen, Y. S. Lin, T. Wang, and S. S. Lu, "A 5.8GHz Fully Integrated Low-Phase-Noise CMOS VCO," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B81] J. H. Lee, C. C. Chen, and Y. S. Lin, "A High-Performance Wideband CMOS Low-Noise Amplifier Using Inductive Series and Parallel Peaking Techniques," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B82] C. C. Chen, Y. S. Lin, J. F. Chang, and J. H. Lee, "A K-Band Low-Noise Amplifier Using Shunt RC-Feedback and Series Inductive-Peaking Techniques," Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT), Hsinchu, Taiwan.
- [B83] P. K. Tsai, T. H. Huang, and Y. S. Lin, "Integration of CMOS VCO and Frequency Divider for Ku-band Low-Power Frequency Synthesizer," The Third International Conference on Innovative Computing, Information and Control, Dalian, China.
- [B84] C. Z. Chen, J. H. Lee, C. C. Chen, and Y. S. Lin, "An Excellent Phase-Linearity 3.1-10.6 GHz CMOS UWB LNA Using Standard 0.18 mm CMOS Technology," Proceedings of 2008 IEEE Asia-Pacific Microwave Conference, Bangkok, Thailand, pp. 1-4.
- [B85] J. F. Chang, Y. S. Lin, C. Z. Chen, C. C. Chen, P. F. Yeh, P. L. Huang, T. Wang, and S. S. Lu, "Ultra-Low-Loss and Broadband Micromachined Inductors and Transformers for 30-100 GHz CMOS RFIC Applications by CMOS-Compatible ICP Deep Trench Technology," Proceedings of 2007 IEEE Radio and Wireless Symposium (2007 IEEE RWS), Long Beach, California, USA, pp. 225-228.
- [B86] Y. S. Lin, C. C. Chen, C. Z. Chen, and P. F. Yeh, "High-Coupling and Ultra-Low-Loss Interlaced Stacked Transformers for 60-100 GHz CMOS RFIC Applications," Proceedings of 2007 IEEE Radio and Wireless Symposium (2007 IEEE RWS), Long Beach, California, USA, pp. 357-360.
- [B87] Y. H. Tsou, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A CPGS Inductor for RFIC Applications," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B88] H. Y. Fang, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A 5GHz Fully Integrated Low Power CMOS VCO," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B89] Y. C. Lin, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A study of Intra-Body Signal Transmission For Instantaneous Health-Monitor-System Applications," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B90] P. K. Tsai, C. Z. Chen, Y. S. Lin, and G. W. Huang, "Ku-band Voltage-Controlled Oscillator and Injection-Locked Frequency Divider for Frequency Synthesizer Application," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B91] J. H. Lee, C. C. Chen, C. Z. Chen, Y. S. Lin, and G. W. Huang, "A 3.1-10.6-GHz Ultra-Wideband CMOS Low-Noise Amplifier Utilizing Inductive Series And Shunt Peaking Techniques," Proceedings of 2007 Symposium on Nano Device Technology (SNDT), Hsin-chu, Taiwan.
- [B92] S. H. Yen Y. S. Lin, and C. C. Chen, "A Ka-Band Low Noise Amplifier Using Standard 0.18 mm CMOS Technology for Ka-Bnad Communication System Applications," Proceedings of 2006 IEEE Asia-Pacific Microwave Conference (2006 IEEE APMC), Yokohama, Japan, pp. 317-319.
- [B93] Y. S. Lin, C. C. Chen, H. B. Liang, T. Wang, and S. S. Lu, "An Ultra-Low-Loss Micromachined RF Monolithic Transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC Applications," Proceedings of 2006 IEEE Asia-Pacific Microwave Conference (2006 IEEE APMC), Yokohama, Japan, pp. 1421-1424.
- [B94] Y. S. Lin, C. C. Chen, H. B. Liang, T. Wang, and S. S. Lu, "High-Quality-Factor and Low-Power-Loss Micromachined RF Bifilar Transformer for UWB RFIC Applications," Proceedings of 2006 International Solid-State Devices and Materials Conference (2006 SSDM), Yokohama, Japan, pp. 798-799.
- [B95] Y. S. Lin, C. C. Chen, Y. R. Tzeng, and H. B. Liang , "An Analysis of Layout and Temperature Effects on Magnetic-Coupling Factor, Resistive- Coupling Factor, and Power Gain Performances of RF Transformers for RFIC Applications," Proceedings of 2006 International Solid-State Devices and Materials Conference (2006 SSDM), Yokohama, Japan, pp. 522-523.
- [B96] Y. S. Lin, Z. H. Yang, C. C. Chen, and T. C. Chao, "Design and Implementation of a Miniaturized +8 dBm IIP3 3-5 GHz UWB CMOS LNA," Proceedings of 2007 National Communication Conference, Kaohsiung county, Taiwan, pp.127.
- [B97] Y. S. Lin, C. C. Chen, H. B. Liang, and M. S. Huang, "Analyses and Wideband Modeling (DC-to- 50GHz) of Various Dummy Devices For Accurate RF Devices and ICs De-embedding Applications," Proceedings of 2007 National Communication Conference, Kaohsiung county, Taiwan, pp.261.
- [B98] H. B. Liang, Y. S. Lin, C. C. Chen, and J. H. Lee, "Optimization of PGS Pattern of Transformers/Inductors in Standard RF BiCMOS Technology for RFIC Applications," Proceedings of 2006 IEEE Radio Frequency Integrated Circuits Symposium (2006 IEEE RFIC Symposium), San Francisco, USA, pp. 11-14.
- [B99] Y. S. Lin, H. B. Liang, T. Wang, and S. S. Lu, "An Analysis of Perfect-Magnetic-Coupling Ultra-Low-Loss Micromachined SMIS RF Transformers for RFIC Applications," Proceedings of 2006 IEEE Radio and Wireless Symposium (2006 IEEE RWS), pp. 55-58, San Diego, USA.
- [B100] Y. S. Lin, and S. C. Chen, and S. B. Chang, "Analysis and Design of LNA and VCO With Transformer Feedback Loop," Proceedings of 2006 IEEE International Symposium on VLSI Design, Automation, and Test (VLSI-DAT), Hsin-chu, Taiwan, pp. 299-300.
- [B101] S. H. Yen, and Y. S. Lin, "Design and Implementation of a DC-to-17-GHz UWB SiGe LNA with a Peaking Inductor," Proceedings of 2006 IEEE International Symposium on VLSI Design, Automation, and Test (VLSI-DAT), Hsin-chu, Taiwan, pp. 87-88.
- [B102] W. S. Liao, Y. S. Lin, T. C. Chao, C. H. Chen, and S. S. Lu, "A 1-to-12 GHz Distributed Amplifier Designed by Micromachined Inductors," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), p. 119, Hsin-chu, Taiwan.
- [B103] S. H. Yen, Y. S. Lin, and G. W. Huang, "An Ultra-Wideband (3.1 – 10.6 GHz) Matched SiGe LNA Using Multiple Feedback-Loops, Transistor’s Intrinsic Base-Collector Capacitor, and Inductive Peaking Technique," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 114, Hsin-chu, Taiwan.
- [B104] Z. H. Yang, Y. S. Lin, and Y. R. Tzeng, "A low-power 0.18 mm CMOS LNA for Ultra- Wideband Frontends," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 119, Hsin-chu,Taiwan.
- [B105] Z. H. Yang, Y. S. Lin, and Y. R. Tzeng, "Design and Implementation of a 3-5 GHz UWB CMOS LNA," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 118, Hsin-chu, Taiwan.
- [B106] P. F. Yeh, Y. S. Lin, and G. W. Huang, "Single-turn Multiple-layer Interlaced Stacked (SMIS) Transformer for Millimeter Wave Application," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 117, Hsin-chu, Taiwan.
- [B107] P. F. Yeh, and Y. S. Lin, "A Wide Variable Inductance Inductor for 2-4 GHz VCO Applications," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 117, Hsin-chu, Taiwan.
- [B108] M. H. Huang, and Y. S. Lin, "A 3-5 GHz CMOS Ultra-Wideband Low-Noise Amplifier Using Inductive Peaking Technique," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 115, Hsin-chu, Taiwan.
- [B109] J. F. Chang, and Y. S. Lin, "Miniaturized Inductors for Millimeter Wave Applications," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 120, Hsin-chu, Taiwan.
- [B110] M. H. Huang, and Y. S. Lin, "An Analysis of High-Coupling Factor Interlaced-Stacked Transformers with Various Turn Ratio for RFIC Applications," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 116, Hsin-chu, Taiwan.
- [B111] S. B. Chang, Y. S. Lin, and G. W. Huang, "Study of achievable optimized performance of variable inductance inductor with cantilever-beam," Proceedings of 2006 Symposium on Nano Device Technology (SNDT), pp. 56, Hsin-chu, Taiwan.
- [B112] Y. S. Lin, H. B. Liang, and Y. R. Tzeng, "Implementation of Perfect-Magnetic-Coupling Ultra-Low-Loss Transformer in Standard RFCMOS Technology," Proceedings of 2005 IEEE Electron Device and Solid-State Circuits (2005 EDSSC), pp. 435-438, Hong-Kong, China.
- [B113] Y. S. Lin, H. B. Liang, H. W. Chiu, K. Liu, H. H. Wu, S. S. Lu, and M. S. Lin, "Wideband Modeling of Temperature and Substrate Effects in RF Inductors on Silicon for 3.1-10.6 GHz UWB System Applications," Proceedings of 2005 IEEE Electron Device and Solid-State Circuits (2005 EDSSC), pp. 47-50, Hong-Kong, China.
- [B114] Y. S. Lin, H. B. Liang, J. L. Chen, K. H. Chen, and S. S. Lu, "Variable Inductance Planar Spiral Inductors and CMOS Wideband Amplifiers with Inductive Peaking," Proceedings of 2005 IEEE Electron Device and Solid-State Circuits (2005 EDSSC), pp. 63-66, Hong-Kong, China.
- [B115] Y. R. Tzeng, Y. S. Lin, and H. B. Liang, "Characterization and Modeling of High-Coupling- Factor Low-Loss Stacked 3-D Transformers," Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS), pp. 44, Kaohsiung, Taiwan.
- [B116] Y. S. Lin, C. C. Chen, and H. B. Liang, "Temperature and Size Effects on the Performances of RF S-Parameters, and Noise and Power Parameters of GaInP-GaAs HBTs for 3.1-10.6 GHz UWB Applications," Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS), pp. 58, Kaohsiung, Taiwan.
- [B117] S. H. Yen, Y. S. Lin, and H. B. Liang, "An Analysis of Silicon Substrate Effects in LNA for 60 GHz WLAN Applications," Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS), pp. 34, Kaohsiung, Taiwan.
- [B118] Y. S. Lin, H. B. Liang, S. C. Chen, and M. S. Huang, "An Analysis of Layout on the Noise Figure and Q-factor Performances of Circular Planar Spiral Inductors," Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS), pp. 21, Kaohsiung, Taiwan.
- [B119] Y. S. Lin, H. B. Liang, T. Wang, and S. S. Lu, "MEMS 3-D Stacked RF Transformers Fabricated by 0.18 mm MS/RF CMOS technology With Improved Power Loss and Noise Figure Performances," Solid-Stae Devices and Materials Conference, Kobe, Japan, pp. 606-607, 2005.
- [B120] Y. S. Lin, H. B. Liang, C. C. Chen, J. L. Chen, and S. S. Lu, "Small-Signal Intrinsic Base Resistance Effect on InP-InGaAs, InGaP-GaAs, and SiGe HBTs," Proceedings of 2005 IEEE Device Research Conference (2005 IEEE DRC), Santa Barbara, California, USA, pp. 65-66, 2005.
- [B121] S. S. Lu, T. Wang, and Y. S. Lin, "High-performance Fully Integrated 4 GHz CMOS LC VCO in Standard 0.25-mm CMOS Technology," Proceedings of The 5th Emerging Information Technology Conference (EITC 2005), Taipei, Taiwan, pp. 157-160, 2005.
- [B122] H. B. Liang, Y. S. Lin, and G. W. Huang, "Wide-band Modeling and an Analysis of Noise Figure of Monolithic RF Inductors on Silicon Substrate," Proceedings of 2005 Symposium on Nano-Device Technology, Hsin-Chu, Taiwan, pp. 249-252, 2005.
- [B123] H. B. Liang, Y. S. Lin, J. N. Yeh, G. W. Huang, and S. S. Lu, "Wide-Band Modeling of Temperature Effect on Differentially Symmetrical 4-port Transformer on Silicon," Proceedings of 2005 Symposium on Nano-Device Technology, Hsin-Chu, Taiwan, pp. 253-256, 2005.
- [B124] J. L. Chen, Y. S. Lin, K. H. Chen, and G. W. Huang, "An Analysis of Substrate Resistance Effects on S-Parameters, fT, fmax, and NF Performances of 0.18 mm RF MOSFETs," Proceedings of 2005 Symposium on Nano-Device Technology, Hsin-Chu, Taiwan, pp. 245-248, 2005.
- [B125] K. N. Liao, Y. S. Lin, and H. B. Liang, "A 2.4/5.7 GHz Concurrent Dual-Band SiGe BiCMOS LNA," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 291-296, 2004.
- [B126] C. C. Chen, Y. S. Lin, K. N. Liao, and W. H. Liao, "A 5 GHz Mixer for WLAN Application Using SiGe Technology," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 347-350, 2004.
- [B127] K. N. Liao, Y. S. Lin, and S. C. Chen, "A Low-Power and Low-Phase-Noise SiGe VCO at 5-GHz Band Frequencies," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 407-410, 2004.
- [B128] H. B. Liang, Y. S. Lin, J. L. Chen, and W. H. Liao, "Optimization of RF Stacked Spiral Inductors, Two-in-One Planar Inductor and Their Applications to Wireless Circuit Design," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 373-378, 2004.
- [B129] K. H. Chen, Y. S. Lin, J. L. Chen, and K. N. Liao, "A CMOS Wideband Amplifier with Capacitive and Inductive Peaking Technique for WLAN Applications," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 214-217, 2004.
- [B130] C. C. Chen, Y. S. Lin, and W. H. Liao, "The Switched Multi-Band LNA in 0.18 mm CMOS Technology," Proceedings of 2004 National Symposium on Telecommunications, Keelung, Taiwan, pp. 379-384, 2004.
- [B131] Y. S. Lin, C. C. Chen, S. C. Chen, and S. S. Lu, "A Miniaturized Monolithic Low Noise Amplifier for 2.4/5.2/5.7 GHz WLAN Applications Using InGaP/GaAs HBT Technology," 2004 IEEE Asia-Pacific Conference on Advanced System Integrated Circuits (AP-ASIC 2004), pp. 292-295, Fukuoka, Japan.
- [B132] Y. S. Lin, H. B. Liang, and S. S. Lu, "An Analysis of the Bias Dependence of Scattering Parameters S11 and S22 of SiGe Heterojunction Bipolar Transistors (HBTs)," 2004 IEEE Radio Frequency Integrated Circuits Symposium, pp. 611-614, Fort Woth, Texas, USA.
- [B133] Y. S. Lin, T. Wang, and S. S. Lu, "Temperature-Dependence of Noise Figure of Monolithic RF Transformers on a Thin (20 mm) Silicon Substrate," IEEE 2004 Radio and Wireless Conference, pp. 103-106, Atlanta, USA.
- [B134] Y. S. Lin, Jien-Nan Yeh, and Si-Chang Chen, "An Analysis of Small-Signal Source-Body Resistance Effect on RF Power MOSFETs for 5-GHz Band WLAN Applications," IEEE 2004 Radio and Wireless Conference, pp. 99-102, Atlanta, USA.
- [B135] Y. S. Lin, H. B. Liang, and G. W. Huang, "Temperature Induced Substrate Effect in Monolithic RF Active and Passive Devices on Silicon," 4th International Conference on Microwave and Millimeter Wave Technology (ICMMT-2004), Beijing, China, pp. 101-104.
- [B136] Y. S. Lin, and S. H. Wu, "Temperature and Substrate Thickness Dependence of Q and NF in High-Q Broadband Spiral Inductors for CMOS RF MEMSOC Applications," 4th International Conference on Microwave and Millimeter Wave Technology (ICMMT-2004), Beijing, China, pp. 105-108.
- [B137] K. N. Liaw, and Y. S. Lin, "A Monolithic Differential VCO for 5 GHz-Band Applications using InGap/GaAs HBT Techology," 2004 Cross Strait Triple Radio & Wireless Conference (CSTRW04), Hsin-Feng, Taiwan, pp. 11-14.
- [B138] K. N. Liaw, and Y. S. Lin, "S-band/C-band Current Dual-Band LNA with 0.35 mm SiGe BiCMOS Technology," 2004 Cross Strait Triple Radio & Wireless Conference (CSTRW04), Hsin-Feng, Taiwan, pp. 15-18.
- [B139] T. H. Lee, Y. S. Lin, and G. W. Huang, "Characterization and Modeling of High-Performance Monolithic Inductors with Halo Substrate Contact Pattern Shield," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp.210-213.
- [B140] T. H. Lee, and Y. S. Lin, "Study of Monolithic Symmetric Inductors on Silicon with Various Tapered Line Widths," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 325-328.
- [B141] S. H. Wu, H. B. Liang, and Y. S. Lin, "Area-Efficient 3D Inductors with 6μm-Thick Top Metal for RF-IC Applications," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 364-367.
- [B142] K. N. Liao, Y. S. Lin, and G. W. Huang, "A Comprehensive Study of Temperature (-25 ~ 175oC) Effect on 2.4/5.7 GHz Concurrent Dual-Band InGaP/GaAs LNA," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 360-363.
- [B143] K. H. Chen, Y. S. Lin, and J. L. Chen, "Temperature and Bias Effect of Silicon Substrate Resistance Effect in 4-T RF CMOS," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 337-340.
- [B144] C. C. Chen, and Y. S. Lin, "Study of Temperature Effect on an InGaP/GaAs HBT LNA suitable for 0.9/1.8/2.4 Multi-Band applications," 2004 Symposium on Nano Devices Technology (SNDT), Hsinchu, Taiwan, R.O.C., pp. 334-336.
- [B145] T. H. Lee and Y. S. Lin, "A 3 mW Concurrent Dual-Band Low Noise Amplifier for WLAN in 0.18 mm CMOS," National Symposium on Telecommunications, Taoyuan, Taiwan, R.O.C, 2003.
- [B146] H. B. Liang and Y. S. Lin, "A 5.2 GHz Low Noise Amplifier with Substrate Thinning and Thick Gold-Plated Inductor," National Symposium on Telecommunications, Taoyuan, Taiwan, R.O.C, 2003.
- [B147] T. H. Lee, Y. S. Lin, and S. S. Lu, "Analysis and Design of CMOS Wide-BAND Amplifier With Multiple Feedback Loops," 2003 National Symposium on Telecommunications, Taoyuan, Taiwan, R.O.C., 2003.
- [B148] Y. S. Lin, T. H. Lee, and H. B. Liang, "A Comprehensive Analysis of the Temperature Effects on the Scattering parameters and Gain Performances of a 100 nm RF nMOSFET," 2003 Electron Devices and Materials Symposium, Keelung, Taiwan, R.O.C, pp. 140-141.
- [B149] Y. S. Lin, "An Analysis of RF Scattering Parameters, Noise and Power Performances of RF Power MOS in 0.15 mm CMOS Technology for RF SOC Applications," 2003 Electron Devices and Materials Symposium, Keelung, Taiwan, R.O.C, pp. 104-105.
- [B150] T. H. Lee, Y. S. Lin, H. Y. Tu, D. S. Chou, and S. S. Lu, "Temperature- Dependence of DC and RF Characteristics of E-mode Ga0.51In0.49P/ In0.15Ga0.85As pHEMTs," 2003 Electron Devices and Materials Symposium, Keelung, Taiwan, R.O.C, 261-264.
- [B151] Y. S. Lin, H. W. Chiu, S. H. Wu, and S. S. Lu, "Characterization and Modeling of High Q-Factor, High Resonant Frequency Spiral Inductors with 6 m thick Top-Metal for RF-IC Applications," Proceedings of the Solid-Stae Devices and Materials, Tokyo, Japan, 2003.
- [B152] Y. S. Lin, H. Y. Tu, D. S. Chou, and S. S. Lu, "DC, and RF Scattering Parameters, Noise and Power Characteristics of Enhancement-Mode In0.51Ga0.49P/In0.15Ga0.85As/ GaAs Power pHEMT’s," Proceedings of IEEE 2003 International Symposium on Compound Semiconductors, pp. 223-224, San Diego, USA.
- [B153] Y. S. Lin, K. N. Liao, and S. S. Lu, "Characterization and Modeling of the Anomalous Dip in Scattering Parameter S11 of InGaP/GaAs HBTs," Proceedings of IEEE 2003 International Symposium on Compound Semiconductors, pp. 209-210, San Diego, USA.
- [B154] Y. S. Lin, H. Y. Tu, H. W. Chiu, and S. S. Lu, "Characterization and Modeling of Size Effect on the Performances of 0.10 mm RF MOSFETs for SOC Applications," Proceedings of 2003 IEEE Radio-Frequency Integrated- Circuits, pp. 543-546, Philadelphia, USA.
- [B155] Y. S. Lin, T. H. Lee, H. B. Liang, and S. S. Lu, "Characterization and Modeling of 100 nm RF Generic CMOS and 500 nm RF Power CMOS," Proceedings of IEEE VLSI Technology, System and Applications, Hsin-Chu, Taiwan, R.O.C., 2003.
- [B156] Y. S. Lin, S. S. Lu, T. H. Lee, and H. B. Liang, "Characterization and Modeling of Small-Signal Substrate Resistance Effect in RF CMOS," IEEE Radio Frequency Integrated Circuits Symposium, Seattle, U.S.A., pp. 315-318, 2002.
- [B157] Y. S. Lin, H. B. Liang, and S. S. Lu, "An Analysis of Small-Signal Gate-Drain Resistance Effect on RF Power MOSFETs for SOC Applications," International Electron Devices and Materials Symposium, Taipei, Taiwan, R.O.C., pp. 211-214, 2002.
- [B158] Y. S. Lin, C. C. Wu, C. S. Chang, R. P. Yang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "Low-leakage 0.11 mm CMOS for Low-Power RF-ICs and SRAMs Applications," Solid-State Device Meeting (SSDM), Nagoya, Japan, 2002.
- [B159] Y. S. Lin, H. Y. Tu, and S. S. Lu, "A Comprehensive Analysis of the Kink Phenomenon in Scattering Parameter S22 and S21 of GaInP/GaAs HBTs," Solid-State Device Meeting (SSDM), Nagoya, Japan, 2002.
- [B160] Y. S. Lin, S. S. Lu and C. C. Chen, "Characterization and Modeling of High-Output- Power Microwave Ga0.51In0.49P/InxGa1-xAs/GaAs Doped- Channel FETs," 2002 Taiwan-Japan Symposium on SQUID & Communication Electronics, Yuanlin, Taiwan, R.O.C.
- [B161] Y. S. Lin and T. H. Lee, "High Performance Micro-machined Tapered Spiral Inductors with Resonant Frequency of 17 GHz," 2002 Taiwan-Japan Symposium on SQUID & Communication Electronics, Yuanlin, Taiwan, R.O.C.
- [B162] Y. S. Lin, H. B. Liang, and S. S. Lu, "An Analysis of the Kink Effect of Scattering Parameter S22 in RF Power MOSFETs for System-On-Chip (SOC) Applications," 2002 Taiwan-Japan Symposium on SQUID & Communication Electronics, Yuanlin, Taiwan, R.O.C.
- [B163] T. H. Lee and Y. S. Lin, "A High-Performance 5.2 GHz CMOS LNA with Novel Substrate Contact Structure and Shield Pads," 2002 National Symposium on Telecommunications, vol. II, pp.252-257, Puli, Taiwan, R.O.C.
- [B164] H. M. Hsu, J. G. Su, Y. S. Lin, M. H. Tseng, J. C. H. Lin, J. Y. C. Sun, D. Tang, T. T. Yang, T. S. Tu, L. F. Lin, "High Q Broadband Copper Spiral Inductors with Q=45 on Proton-bombarded Semi-insulating Silicon Substrate," IEEE Asia-Pacific Microwave Conference, pp. 113-116, 2002.
- [B165] Y. S. Lin, H. M. Hsu, T. H. Lee, and H. B. Liang, "Effects of Geometric Structure and Temperature on the Performance of Spiral Inductors," Electron Device and Material Conference, Kaohsiung, Taiwan, pp. 475-476, 2001.
- [B166] Y. S. Lin, H. T. Huang, C. C. Wu, Y. K. Leung, H. Y. Pan, T. E. Chang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "On the SiO2 Based Gate-Dielectric Scaling Limit for Low-Standby Power Applications in the Context of a 0.13 mm CMOS Logic Technology," 9TH International Symposium on Integrated Circuits, Devices & Systems, Singapore, 2001.
- [B167] S. S. Lu, and Y. S. Lin, "Single-Voltage-supply Operation of GaInP/InGaAs Doped Channel FET's for Wireless Communication," IEEE 25th International Symposium on Compound Semiconductors, Nara, Japan, October 1998.
- [B168] Y. S. Lin, and S. S.Lu, "High-Power High-Speed Ga0.51In0.49P/InxGa1-xAs Doped Channel FET’s," 9TH IEEE International Conference on Indium- Phosphide and Related Materials, Hyannis, Massachusetts, U.S.A., 1997.
- [B169] S. S. Lu and Y. S. Lin, "Fabrication and Simulation of Ga0.51In0.49P/InxGa1-xAs Doped Channel FET’s and MMIC Amplifiers Grown by GSMBE," IEEE Device Research Conference, Colorado, U.S.A., 1997.
- [B170] Y. S. Lin and S. S. Lu, "High-Breakdown-Voltage High-Speed Ga0.51In0.49P/ In0.2Ga0.8As Doped Channel FET’s Using Triple-Recessed Gate Structure," 24TH IEEE International Symposium on Compound Semiconductors, San Diego, U.S.A., 1997.
- [B171] Y. S. Lin , Y. J. Wang, S. S. Lu and C. C. Meng, "Simulation and Fabrication of High Performance Ga0.51In0.49P/GaAs MISFET’s Grown by GSMBE," IEEE GaAs IC Symposium, Orlando, U.S.A, 1996.
- [B172] Y. S. Lin and S. S. Lu, "High-Frequency High-Breakdown-Voltage Ga0.51In0.49P Channel MISFET’s Grown by GSMBE," 21TH International Infrared and Millimeter Waves Conference, Berlin, Germany, 1996.
- [B173] Y. S. Lin and S. S. Lu, "Study of Influence of Extrinsic Capacitances on High-Frequency Performance of Ga0.51In0.49P/GaAs MISFETs," IEEE International Semiconductor Conference, Sinaia, Romania, 1996.
- [B174] Y. S. Lin, S. S. Lu and T. P. Sun, "Ga0.51In0.49P/GaAs Differential Amplifier for High Frequency Application," 20TH International Infrared and Millimeter Waves Conference, Orlando, U.S.A., 1995.
- [B175] S. S. Lu and Y. S. Lin, "High-Power Ga0.51In0.49P/GaAs Airbridge Gate MISFET Grown by GSMBE," IEEE International Semiconductor Conference, Sinaia, Romania, 1995.
- [B176]Y. S. Lin, G. Y. Wu and K. M. Hung, "Theoretical Study of Hole Tunneling Under a Transverse Magnetic Field," Annual Meeting of R.O.C. Physical Society, 1993
C. Patents (專利)
- [C1] Yo-Sheng Lin, and Hsien-Tsung Liu, "Method for making Y-Shaped Multi-Fin Stacked Capacitors For Dynamic Random Access Memory Cells," US patent 006083790A.
- [C2] Yo-Sheng Lin, and Hsien-Tsung Liu, "Method for making Y-Shaped Multi-Fin Stacked Capacitors For Dynamic Random Access Memory Cells," ROC patent 117838 (林佑昇及劉賢宗,"動態隨機存取記憶體之電容",中華民國專利,證書號數:117838).
- [C3] Yo-Sheng Lin, Yi-Ming Sheu, Da-Wen Lin, and Chi-Hsun Hsieh, "Planarizing Method For Fabricating Gate Electrodes," US patent 006670226.
- [C4] Yo-Sheng Lin, Yi-Ming Sheu, Da-Wen Lin, and Chi-Hsun Hsieh, "Planarizing Method For Fabricating Gate Electrodes," ROC patent 02315 (林佑昇、許義明、林大文及謝奇勳,"具有不同摻質之複晶矽層的製作方法",中華民國專利,證書號數:02315).
- [C5] Wei-Hsuan Liaw, Yo-Sheng Lin, and Yan-Ru Tseng, "An Effective Method for Reducing the Loss of Semiconductor Silicon Substrate," ROC patent I255489 (廖維軒、林佑昇及曾彥儒,"一種有效的降低半導體矽基板損耗之方法",中華民國專利,證書號數:I255489)。
- [C6] Jin-Fa Chang, and Yo-Sheng Lin, "A High-Gain Low-Noise Amplifier," ROC patent I433454 (張錦法及林佑昇,"高增益低雜訊放大器",中華民國專利,證書號數:I433454)。
- [C7] Jen-How Lee, and Yo-Sheng Lin, "Down-Conversion Frequency Mixer Circuit," US patent 006083790A.
- [C8] Chung-MIing Tsai, Yo-Sheng Lin, and Wei-Chen Wen, "Balanced Frequency Mixer Circuit," US patent 8829974B2.
- [C9] Jen-How Lee, and Yo-Sheng Lin, "Down-Conversion Frequency Mixer Circuit," pending application of ROC patent, application number: 102118445 (李仁豪及林佑昇,"降頻式混頻電路",中華民國專利申請中,申請案號:102118445).
- [C10] Chung-Ming Tsai, Yo-Sheng Lin, and Wei-Chen Wen, "Balanced Frequency Mixer Circuit," pending application of ROC patent, application number: 102101814 (蔡宗閔、林佑昇及溫韙丞,"平衡式混頻電路",中華民國專利申請中,申請案號:102101814).
- [C11] Yo-Sheng Lin, and Chien-Chin Wang, "Frequency-Shift-Keying Receiver," pending application of ROC patent, application number: 102142049 (林佑昇及王建今,"頻移鍵控接收裝置",中華民國專利申請中,申請案號:102142049).
- [C12] Yo-Sheng Lin, and Chien-Chin wang, "Frequency-Shift Keying Receiver," pending application of US patent (application number: 14/282333).
- [C13] Yo-Sheng Lin, and Wei-Chen Wen, "Balanced Up-Conversion Frequency Mixer Circuit," pending application of ROC patent, application number: 103100375 (林佑昇及溫韙丞,"平衡式升頻混頻電路",中華民國專利申請中,申請案號:103100375).
- [C14] Yo-Sheng Lin, Run-Chi Liu, and Chia-Hsing Wu, "Ultra-Wideband Low-Noise Amplifier Circuit with Low Power Consumption," pending application of US patent (application number: 14/166919).
- [C15] Yo-Sheng Lin, Run-Chi Liu, and Chia-Hsing Wu, "Ultra-Wideband Low-Noise Amplifier Circuit with Low Power Consumption," pending application of ROC patent, application number: 103100375 (林佑昇、劉潤齊及吳家興,"超寬頻低雜訊放大器電路,"中華民國專利申請中,申請案號:103100375).
- [C16] Yo-Sheng Lin, and Run-Chi Liu, "High-Gain Low-Noise Amplifier," pending application of ROC patent (林佑昇及劉潤齊,"高增益低雜訊放大電路,"中華民國專利申請中,申請案號:103116827).
- [C17] Yo-Sheng Lin, and Chien-Chin Wang, "An Effective Way to Enhance Gain and Reduce Power of a Frequency-Shift Keying Demodulator," pending application of ROC patent, application number: 103121926 (林佑昇及王建今,"頻移鍵控解調裝置",中華民國專利申請中,申請案號:103121926).
- [C18] Yo-Sheng Lin, and Chien-Chin Wang, "Dual-Band Voltage-Controlled Oscillator," pending application of ROC patent (林佑昇及王建今,"雙頻帶壓控震盪器電路,"中華民國專利申請中).
- [C19] Yo-Sheng Lin, and Kuo-How Li, "Low-Power and High-Conversion-Gain Wideband Down-Conversion Mixer," pending application of ROC patent (林佑昇及李國豪,"低功率高轉換增益寬頻降頻混波器,"中華民國專利申請中).
- [C20] Yo-Sheng Lin, and Hsin-Chen Lin, "A Design Method for Effectively Enhancing Output Power and Efficiency of Power Amplifiers," pending application of ROC patent (林佑昇及林欣晨,"一種有效提升功率放大器之輸出功率及效率的設計方法,"中華民國專利申請中).
- [C21] Yo-Sheng Lin, and Chien-Chin Wang, "Low-Loss and Miniature Balun and Dual Balun," pending application of ROC patent (林佑昇及王建今,"低損耗、小面積之差動至單端轉換器及雙重差動至單端轉換器,"中華民國專利申請中).
- [C22] Yo-Sheng Lin, and Run-Chi Liu, "Design Method of Low-Power Millimeter-Wave CMOS Double-Balanced Up-Conversion Mixer with High Conversion-Gain and Port-to-Port Isolation," pending application of US patent.
- [C23] Yo-Sheng Lin, and Run-Chi Liu, "Design Method of Low-Power Millimeter-Wave CMOS Double-Balanced Up-Conversion Mixer with High Conversion-Gain and Port-to-Port Isolation," pending application of ROC patent (林佑昇及劉潤齊,"高轉換增益及隔離度之低功率豪米波CMOS雙平衡式升頻混波器之設計方法,"中華民國專利申請中)
D、Books or a Chapter of a Book (專書或專書專章)
- [D1] "The Science and Engineering of Microelectronic Fabrication," by Stephen A. Campbell, Oxford University Press, USA, 2001, translated by Yo-Sheng Lin, and Shey-Shi Lu (林佑昇及呂學士譯,"半導體製程 (Stephen A. Campbell 原著)",台北圖書公司發行,2003年出版).
- [D2] Yo-Sheng Lin, and Shey-Shi Lu, "Basic Micromachining Process Modules (chapter 2 of the book: MEMS (Micro Electro Mechanical Systems) Technology and Application)", Published by Instrument Technology Research Center, National Applied Research (NAR) Laboratories, Taiwan, Jul. 2003 (林佑昇及呂學士著, "微機電系統技術與應用第二章:基礎微加工製程模組",國科會精儀中心發行,2003年出版).
- [D3] Yo-Sheng Lin, and Shey-Shi Lu, "Micromachined Devices for Wireless Communication (chapter 7 of the book: Novel Technologies for Microwave and Millimeter-Wave Applications)," Kluwar Academic Publishers, 2004.
- [D4] Yo-Sheng Lin, and Chien-Nan Yeh, "Featured Article: Fabrication and Applications of Inductors and Transformers," Journal of Chinese Institute of Automation Engineers, vol. 4, no. 3, pp. 30-38, Sep. 2004 (林佑昇及葉建男,"專題文章:電感器及變壓器之研製與應用",中華民國自動化科技學會會刊, pp. 30-38, vol. 4, no. 3, 2004年).
- [D5] "Electronic Circuit Analysis and Design," third edition, by Donald A. Neamen, The McGraw Hill Companies, USA, 2006, translated by Yo-Sheng Lin, Ron-Chi Yang, and Chi-Wei Liu (林佑昇、楊榮吉及劉致為譯(呂學士及劉深淵審閱),"微電子學(上)&(下)(第三版)",滄海書局發行,2007年出版).
- [D6] Chi-Chen Chen, Yo-Sheng Lin, and Guo-Wei Huang, "Featured Article 7: Design of a K-Band Receiver Front-End with High Isolation," Nano Communications, vol. 17, no. 2, Jun. 2010 (陳志成、林佑昇及黃國威,"主題文章7:應用於K頻段之高隔離度射頻接收機前端電路設計",奈米通訊,17卷,No.2,pp. 36-41,2010年6月。
- [D7] Yo-Sheng Lin, Hung-Wei Chiu, and Hsiao-Bin Liang, "RFID Chip Design," Gau Lih Book Co., Ltd., 2010 (林佑昇、邱弘緯、梁效彬著,"RFID 晶片設計",高立圖書公司發行,2010年出版).
- [D8] Jen-How Lee, Yong-Chin Chen, Yo-Sheng Lin, and Shey-Shi Lu, "A 21~27 GHz CMOS Receiver Front-End with a Novel Double-Balanced Mixer and an Integrated Balun for Automobile Radar Systems," Nano Communications, vol. 19, no. 3, Sep. 2012 (李仁豪、陳永親、林佑昇及呂學士,"用於汽車雷達系統的一個具有新型雙平衡式混波器並整合平衡器之21~27GHz CMOS接收機前端電路",奈米通訊,19卷,No.3,2012年9月).
- [D9] Yo-Sheng Lin, "Ultra-Wideband Circuits, Systems, and Applications," Journal of Electrical and Computer Engineering, vol. 2012, Article ID 567230, 2 pages, 2012. doi:10.1155/2012/567230