## Publication List

__A____、____Journal Papers (____期刊論文____)__**[2014]**

**[A1]**__Y. S. Lin__, W. C. Wen, and C. C. Wang, "13.6 mW 79 GHz CMOS Up-Conversion Mixer with 2.1 dB Gain and 35.9 dB LO-RF Isolation,", vol. 24, no. 2, pp. 126-128, Feb. 2014.__IEEE Microwave and Wireless Components Letters__

**[A2]**__Y. S. Lin__, C. C. Wang, G. L. Lee, and C. C. Chen, "High-Performance Wideband Low-Noise Amplifier Using Enhanced p-Match Input Network,", vol. 24, no. 3, pp. 200-202, Mar. 2014.__IEEE Microwave and Wireless Components Letters__

**[A3]**__Y. S. Lin__, G. L. Lee, and C. C. Wang, "Low-Power 77~81 GHz CMOS LNA with Excellent Matching for Automotive Radars,", vol. 50, no. 3, pp. 207-209, 2014.__IET Electronics Letters__

**[A4]**__Y. S. Lin__, and G. H. Li, "13 mW 80 GHz Down-Conversion Mixer with 1.5 dB Gain and 49.2 dB LO-RF Isolation," to appear in, vol. 50, no. xx, 2014.__IET Electronics Letters__

**[A5]**__Y. S. Lin__, and J. N. Chang, "A 24-GHz Power Amplifier with Psat of 15.9 dBm and PAE of 14.6% Using Standard 0.18 mm CMOS Technology,", vol. 79, no. 2, pp. 427-435, May 2014.__Analog Integrated Circuits & Signal Processing__

**[A6]**__Y. S. Lin__, W. C. Wen, and T. M. Tsai, "A 12.1 mW 50~67 GHz CMOS Up-Conversion Mixer with 6 dB Conversion Gain and 30.7 dB LO-RF Isolation,", vol. 56, no. 2, pp. 475-483, Feb. 2014.__Microwave and Optical Technology Letters__

**[A7]**__Y. S. Lin__, C. C. Wang, and J. H. Lee, "Design and Implementation of a 1.9~22.5 GHz CMOS Wideband LNA With Dual-RLC-Branch Wideband Input and Output Matching Networks,", vol. 56, no. 3, pp. 677-684, Mar. 2014.__Microwave and Optical Technology Letters__

**[A8]**__Y. S. Lin__, C. C. Wang, G. L. Lee, and C. C. Chen, "A High-Performance Low-Noise Amplifier for 71~76, 76~77 and 77~81 GHz Communication Systems in 90 nm CMOS,", vol. 56, no. 7, pp. 1673-1680, Jul. 2014.__Microwave and Optical Technology Letters__

**[A9]**__Y. S. Lin__, and Wei-Chen Wen, "Design and Implementation of a W-Band High-Performance Double-Balanced Active Up-Conversion Mixer in 90 nm CMOS Technology,", vol. 56, no. 8, pp. 1812-1819, Aug. 2014.__Microwave and Optical Technology Letters__

**[A10]**__Y. S. Lin__, C. C. Wang, and J. H. Lee, "A Low-Power, Low-Noise and High Linearity 60 GHz Wideband CMOS Low-Noise Amplifier for Wireless Personal Area Network (WPAN) Systems,", vol. 80, no. 1, pp. 39-47, Jul. 2014.__Analog Integrated Circuits & Signal Processing__**[A11]**__Y. S. Lin__, C. C. Wang, G. L. Lee, and C. H. Wang, "Analysis and Design of a Compact Ultra-Wideband LNA with 2.3±0.1 dB NF and ±14.6 ps Group-Delay-Variation in 0.18 mm CMOS," to appear in, vol. 56, no. 9, Sep. 2014.__Microwave and Optical Technology Letters__**[A12]**__Y. S. Lin__, C. C. Wang, Y. C. Liao, and S. S. Lu, "Design and Implementation of Intra-Body Communication (IBC) Hub/Alarm Unit in IBC Platform for Fall Prevention System," to appear in, vol. 56, no. 10, Oct. 2014.__Microwave and Optical Technology Letters__**[A13]**__Y. S. Lin__, F. C. Liu, and W. C. Wen, "Design and Implementation of Squared and Octagonal W-Band CMOS Marchand Baluns for W-Band Communication Systems," to appear in, vol. 56, no. 10, Oct. 2014.__Microwave and Optical Technology Letters__**[A14]**__Y. S. Lin__, H. B. Liang, M. C. Lin and C. H. Wang, "Enhancement of Sensitivity of RF Modules for Wireless Health Care and Home Security Systems," to appear in, vol. 56, no. 12, Dec. 2014.__Microwave and Optical Technology Letters__**[A15]**__Y. S. Lin__, G. H. Li, and N. V. Hieu, "A 75~85 GHz Down-Conversion Mixer with Integrated Marchand Baluns in 90 nm CMOS with Excellent Matching and Port-to-Port Isolation for Automotive Radars," to appear in, vol. 56, no. 12, Dec. 2014.__Microwave and Optical Technology Letters__**[A16]**__Y. S. Lin__, and R. C. Liu, "A Low-Power, High-Gain and Low-Noise 5~6 GHz CMOS Low-Noise Amplifier with Excellent Reverse Isolation for IEEE 802.11 n/ac WLAN Applications," to appear in, vol. 56, no. 12, Dec. 2014.__Microwave and Optical Technology Letters__

**[2013]**

**[A14] J. H. Lee, and**__Y. S. Lin__, "60 GHz CMOS Down-Conversion Mixer with 15.46 dB Gain and 64.7 dB LO-RF Isolation,", vol. 49, no. 4, pp. 264-266, 2013.__IET Electronics Letters__**[A15] J. H. Lee, and**__Y. S. Lin__, "3.88-dB NF 60-GHz CMOS UWB LNA with Small Group-Delay- Variation,", vol. 49, no. 7, pp. 472-474, 2013.__IET Electronics Letters__**[A16] C. W. Lu, C. M. Hsiao,**__Y. S. Lin__, M. C. F. Chang, "A 10-Bit DAC with 1.6-Bit Interpolation Cells for Compact LCD Column Driver ICs,", vol. 9, no. 3, pp. 176-183, 2013.__IEEE/OSA Journal of Display Technology__**[A17] C. W. Lu, C. M. Hsiao, and**__Y. S. Lin__, "A 10-Bit DAC with Offset-Adjustable Op-Amp for LCD Column Driver Applications,", vol. 74, no. 3, pp. 651-660, Mar. 2013.__Analog Integrated Circuits & Signal Processing__**[A18] J. H. Lee, and**__Y. S. Lin__, "60-GHz CMOS Down-Conversion Mixer with Current-Reused RF Single-to-Differential Converter and Integrated Marchand Balun,"*Microwave and Optical Technology Letters*, vol. 55, no. 8, pp. 1937-1946, Aug. 2013.**[A19] T. M. Tsai,**__Y. S. Lin__, and W. C. Wen, "A Low Power and High Conversion Gain 60-GHz CMOS Up-Conversion Mixer Using Current Injection and Dual Negative Resistance Compensation Techniques,"*Microwave and Optical Technology Letters*, vol. 55, no. 8, pp. 1830-1836, Aug. 2013.**[A20] T. M. Tsai, and Y. S. Lin, "A 60-GHz Double-Balanced Mixer with Negative Resistance Compensation for Direct Up-Conversion Using 90-nm CMOS Technology,"**, vol. 55, no. 3, pp. 536-543, 2013.__Microwave and Optical Technology Letters__**[A21] J. N. Chang, and**__Y. S. Lin__, "A High-Performance CMOS Power Amplifier for 60 GHz Short-Range Communication Systems,", vol. 55, no. 5, pp. 1155-1160, 2013.__Microwave and Optical Technology Letters__**[A22] J. F. Chang, and**__Y. S. Lin__, "A High-Voltage Driving 60 GHz Power Amplifier with Psat of 13 dBm and PAE of 9.1% in 90 nm CMOS for IEEE 802.11ad Communication Systems,", vol. 55, no. 9, pp. 2033-2039, Sep. 2013.__Microwave and Optical Technology Letters__**[A23] C. H. Wu, Y. S. Lin, and C. C. Wang, "A 3.1~10.6 GHz Current-Reused CMOS Ultra-Wideband Low-Noise Amplifier Using Self-Forward Body Bias and Forward Combining Techniques,"**, vol. 55, no. 10, pp. 2296-2302, Oct. 2013.__Microwave and Optical Technology Letters__

**[2012]**

**[A24]**__Y. S. Lin__, J. H. Lee, S. L. Huang, C. H. Wang, C. C. Wang, and S. S. Lu, "Design and Analysis of a 21~29 GHz Ultra-Wideband Receiver Front-End in 0.18 mm CMOS Technology,", vol. 60, no. 8, pp. 2590-2604, Aug. 2012.__IEEE Microwave Theory and Techniques__**[A25] C.W. Lu; P. Y. Yin, C. M. Hsiao, M. C. F. Chang, and**__Y. S. Lin__, "A 10-bit Resistor-Floating-Resistor-String DAC (RFR-DAC) for High Color-Depth LCD Driver ICs,", vol. 47, no. 10, pp. 2454-2466, Oct. 2012.__IEEE Journal of Solid-State Circuits__**[A26] J. F. Chang, and**__Y. S. Lin__, "3.2~9.7 GHz Ultra-Wideband Low Noise Amplifier with Excellent Stop-band Rejection,", vol. 48, no. 1, pp. 44-45, Jan. 2012.__IET Electronics Letters__**[A27] T. M. Tsai, and**__Y. S. Lin__, "15.1 mW 60 GHz Up-Conversion Mixer with 4.5 dB Gain and 57.5 dB LO-RF Isolation,", vol. 48, no. 14, pp. 844-845, Jul. 2012.__IET Electronics Letters__**[A28] J. N. Chang, and**__Y. S. Lin__, "60 GHz CMOS power amplifier with Psat of 11.4 dBm and PAE of 15.8%,", vol. 48, no. 17, pp. 1038-1039, Aug. 2012.__IET Electronics Letters__**[A29] J. F. Chang, and**__Y. S. Lin__, "DC-10.5-GHz CMOS Distributed Amplifier with RC Gate Terminal Network for UWB Pulse Radio Systems,", vol. 6, no. 2, pp. 127-134, Feb. 2012.__IET Trans. on Microwaves, Antennas, and Propagation__**[A30] J. F. Chang, and**__Y. S. Lin__, " A 9.45 mW 3~9 GHz Receiver Frond-End with Excellent Stop-band Rejection for UWB Systems Using 0.18 mm CMOS Technology,", vol. 6, no. 3, pp. 282-289, Mar. 2012.__IET Trans. on Microwaves, Antennas, and Propagation__**[A31]**__Y. S. Lin__, C. C. Wang, P. W. Yu, J. H. Lee, and S. S. Lu, "A 0.63 V, 1.7 mW, 11.55 GHz Low Phase-Noise QVCO with Intrinsic-Tuned Technique in 0.18 mm CMOS,", vol. 6, no. 13, pp. 1437-1442, 2012.__IET Trans. on Microwaves, Antennas, and Propagation__**[A32]**__Y. S. Lin__, P. L. Huang, T. Wang, and S. S. Lu, "A Novel Coplanar-Waveguide (CPW) Band-Pass Filter Utilizing the Inductor-Capacitor (LC) Structure in 0.18 mm Complementary Metal-Oxide- Semiconductor (CMOS) Technology for Millimeter-Wave Applications,", vol. 51, pp. 034201-1~034201-4, Mar. 2012.__Japanese Journal of Applied Physics__**[A33] Y. C. Chen, C. H. Wang, and**__Y. S. Lin__, "A Low-Power 24 GHz CMOS Receiver Front-End Using Isolation Enhancement Technique for Automotive Radar Systems,", vol. 54, no. 6, pp. 1471-1476, Jun. 2012.__Microwave and Optical Technology Letters__**[A34] C. Y. Lin, C. H. Cheng, J. F. Chang, and**__Y. S. Lin__, "1-dB Insertion-Loss 1~14.3 GHz Ultra-Wideband Bandpass Filter Using Standard 0.18 mm CMOS Technology,", vol. 54, no. 4, pp. 1044-1047, Apr. 2012.__Microwave and Optical Technology Letters__**[A35] C. H. Wu,**__Y. S. Lin__, and C. C. Wang, "A 11.81 mW 3.1~10.6 GHz Ultra-Wideband Low-Noise Amplifier with 2.87±0.19 dB NF and 12.52±0.81 dB Gain Using 0.18 um CMOS Technology,", vol. 54, no. 6, pp. 1145-1450, Jun. 2012.__Microwave and Optical Technology Letters__**[A36]**__Y. S. Lin__, C. C. Wang, C. C. Chen, C. C. Hsiao, and Y. H. Chou, "A High-Performance IBC-Hub Transceiver for Intra-Body Communication System,", vol. 54, no. 5, pp. 1143-1153, May 2012.__Microwave and Optical Technology Letters__**[A37] J. F. Chang, and**__Y. S. Lin__, "A Low-Power 3.2~9.7 GHz Ultra-Wideband Low Noise Amplifier with Excellent Stop-band Rejection Using 0.18 mm CMOS Technology,", vol. 54, no. 5, pp. 1253-1261, May 2012.__Microwave and Optical Technology Letters__**[A38] J. F. Chang, and**__Y. S. Lin__, "A 3.1 dB NF, 21.31 dB Gain Micro-machined 3~10 GHz Distributed Amplifier for UWB Systems in 0.18 um CMOS Technology,", vol. 54, no. 5, pp. 1163-1167, May 2012.__Microwave and Optical Technology Letters__**[A39] C. Y. Lin, J. F. Chang, and**__Y. S. Lin__, "Design and Implementation of a 2.8-dB Insertion Loss V-Band Bandpass Filter in 0.13 um CMOS Technology,", vol. 54, no. 8, pp. 2001-2006, Aug. 2012.__Microwave and Optical Technology Letters__**[A40] C. Y. Lin,**__Y. S. Lin__, H. C. Lu, and Y. L. Chang, "Design and Implementation of a 24/60 GHz Dual- Band Monopole Meander-Line Planar CMOS Antenna,", vol. 54, no. 7, pp. 1731-1737, Jul. 2012.__Microwave and Optical Technology Letters__**[A41] C. Y. Lin,**__Y. S. Lin__, H. C. Lu, and Y. L. Chang, "Design and Implementation of a High-Performance 60 GHz CMOS Slot Antenna,", vol. 54, no. 9, pp. 2061-2065, Sep. 2012.__Microwave and Optical Technology Letters__**[A42]**__Y. S. Lin__, and P. W. Yu, "A 28/56 GHz Dual-Band CMOS VCO Using Reversely Tunable LC Source-Degeneration and the Push-Push Technique,", vol. 54, no. 10, pp. 2272-2278, Oct. 2012.__Microwave and Optical Technology Letters__**[A43]**__Y. S. Lin__, and P. W. Yu, "A Miniature and Low-Power 24 GHz CMOS VCO Using Tunable LC Source-Degeneration and Transformer Feedback Techniques for Automotive Radars,", vol. 54, no. 11, pp. 2553-2558, Nov. 2012.__Microwave and Optical Technology Letters__

**[2011]**

**[A44] Y. T. Lin,**__Y. S. Lin__, and S. S. Lu, "A 0.5 V Biomedical System-on-a-Chip for Intra-body Communication System,", vol. 58, no. 2, pp. 690-699, Feb. 2011.__IEEE Trans. on Industrial Electronics__**[A45]**__Y. S. Lin__, J. F. Chang, and S. S. Lu, "Analysis and Design of CMOS Distributed Amplifier Using Inductively-Peaking Cascaded Gain Cell for UWB Systems,", vol. 59, no. 10, pp. 2513-2524, Oct. 2011.__IEEE Trans. on Microwave Theory and Techniques__**[A46] J. F. Chang, and**__Y. S. Lin__, "A High-Performance Distributed Amplifier Using Multiple Noise Suppression Techniques,", vol. 21, no. 9, pp. 495-497, Sep. 2011.__IEEE Microwave and Wireless Components Letters__**[A47] C. W. Tsou, C. C. Chen, and**__Y. S. Lin__, "A 24-GHz I/Q Direct-Down Converter with Integrated Quadrature Couplers and Baluns in Standard 0.18 mm CMOS Technology,", vol. 5, no. 6, pp. 718-727, Jun. 2011.__IET Trans. on Microwaves, Antennas, and Propagation__**[A48] J. F. Chang, and**__Y. S. Lin__, "A 0.99 mW 3-10 GHz CG CMOS UWB LNA Using T-match Input Network and Self-Body-Bias Technique,", vol. 47, no. 11, pp. 658-659, May 2011.__IET Electronics Letters__**[A49] J. F. Chang, and**__Y. S. Lin__, "A 3.15 dB NF, 7.2 mW 3~9 GHz CMOS Ultra-Wideband Receiver Front- End,", vol. 47, no. 25, pp. 1401-1402, Dec. 2011.__IET Electronics Letters__**[A50] J. F. Chang, and**__Y. S. Lin__, "A 2.76-mW, 3- to 10-GHz Ultra-Wideband LNA Using 0.18-mm CMOS Technology,", vol. 53, no. 1, pp. 94-97, Jan. 2011.__Microwave and Optical Technology Letters__**[A51] J. H. Lee, C. C. Chen, and**__Y. S. Lin__, "A V-band CMOS Sub-Harmonic Mixer with Integrated Frequency Doubler and 180o Out-of-Phase Splitter,", vol. 53, no. 4, pp. 870-875, Apr. 2011.__Microwave and Optical Technology Letters__**[A52] J. F. Chang, and**__Y. S. Lin__, "A 3.9 dB NF, 24.5 dB Gain 0.3~10.5 GHz Distributed Amplifier Using Dual-Inductive-Peaking Cascade Gain Cell for UWB Systems in 0.18-μm CMOS,", vol. 53, no. 10, pp. 2228-2232, Oct. 2011.__Microwave and Optical Technology Letters__**[A53] C. C. Wang, C. Z. Chen, and**__Y. S. Lin__, "Wide Locking Range Divide-by-3 Injection-Locked Frequency Divider Using Differential-Injection Linear Mixers and Dual Frequency Tuning,", vol. 53, no. 11, 2622-2626, Nov. 2011.__Microwave and Optical Technology Letters__**[A54] C. C. Wang, C. Z. Chen, and**__Y. S. Lin__, "CMOS Direct Injection-Locked Frequency Divider (3.55 mW 80 GHz) with 26.3% Locking Range Using Distributed LC Tank and Body Bias Techniques,", vol. 53, no. 11, pp. 2694-2697, Nov. 2011.__Microwave and Optical Technology Letters__**[A55] C. C. Chen, C. W. Tsou, and**__Y. S. Lin__, "A Single-Chip 24-GHz Differential I/Q Receiver in 0.18-m CMOS Technology,", vol. 53, no. 11, pp. 2593-2601, Dec. 2011.__Microwave and Optical Technology Letters__**[A56] C. Z. Chen, C. C. Wang,**__Y. S. Lin__, and G. W. Huang, "CMOS (2.28 mW, 67.28-80.78 GHz) Divide-by-4 Direct Injection-Locked Frequency Divider Using Tunable LC Source-Degeneration,", vol. 53, no. 12, pp. 2776-2781, Dec. 2011.__Microwave and Optical Technology Letters__**[A57] C. C. Chen, and**__Y. S. Lin__, "Low Power and High Conversion Gain 21-GHz Receiver Front-End in a Standard 0.18-m CMOS Technology,", vol. 53, no. 12, pp. 2875-2879, Dec. 2011.__Microwave and Optical Technology Letters__

**[2010]**

**[A58] H. K. Chen,**__Y. S. Lin__, and S. S. Lu, "Analysis and Design of a 1.6-28 GHz Compact Wideband LNA in 90 nm CMOS Using a -match Input Network,", vol. 58, no. 8, pp. 2092-2104, Aug. 2010.__IEEE Trans. on Microwave Theory and Techniques__**[A59]**__Y. S. Lin__, C. Z. Chen, H. Y. Yang, C. C. Chen, J. H. Lee, G. W. Huang, and S. S. Lu, "Analysis and Design of a CMOS UWB LNA with Dual-RLC-Branch Wideband Input Matching Network,", vol. 58, no. 2, pp. 287-296, Feb. 2010.__IEEE Trans. on Microwave Theory and Techniques__**[A60] J. H. Lee, C. C. Chen, and**__Y. S. Lin__, "A 3.7 mW 24 GHz LNA with 10.1 dB Gain and 4.5 dB NF in 0.18 m CMOS Technology,", vol. 46, no. 19, pp. 1310-1311, Sep. 2010.__IET Electronics Letters__**[A61] C. H. Wang, Y. T. Chiu, and**__Y. S. Lin__, "A 3.1 dB NF 20-29 GHz CMOS UWB LNA Using a T-match Input Network,", vol. 46, no. 19, pp. 1312-1313, Sep. 2010.__IET Electronics Letters__**[A62] C. Z. Chen, T. Y. Chen,**__Y. S. Lin__, and G. W. Huang, "Excellent Sensitivity 64.8-GHz CMOS Injection-Locked Frequency Divider with 10.2-GHz Locking Range,", vol. 52, no. 3, pp. 518-523, Mar. 2010.__Microwave and Optical Technology Letters__**[A63] J. F. Chang, and**__Y.____S____.____Lin__, "Design and Implementation of a High-Performance V-Band CMOS Bandpass Filter,", vol. 52, no. 2, pp. 309-316, Feb. 2010.__Microwave and Optical Technology Letters__**[A64] J. F. Chang, and**__Y____.____S____.____Lin__, "Miniature 1.87-dB Insertion-Loss V-Band CMOS Bandpass Filter with Two Enhanced Finite Transmission Zeros,", pp. 1830-1836, vol. 52, no. 8, Aug. 2010.__Microwave and Optical Technology Letters__**[A65] Y. T. Chiu,**__Y. S. Lin__, and J. F. Chang, "A 18.85 mW 20-29 GHz Wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB Gain,", vol. 52, no. 9, pp. 2017-2020, Sep. 2010.__Microwave and Optical Technology Letters__**[A66] C. C. Chen,**__Y. S. Lin__, P. L. Huang, and S. S. Lu, "A 4.9-dB NF 53.5-62-GHz Micro-machined CMOS Wideband LNA with Small Group-Delay-Variation,", vol. 52, no. 11, pp. 2427-2432, Nov. 2010.__Microwave and Optical Technology Letters__**[A67] J. H. Lee, C. C. Chen, and**__Y. S. Lin__, "A 60 GHz CMOS Receiver Front-End with Integrated 180o Out-of-Phase Wilkinson Power Divider,", vol. 52, no. 12, pp. 2688-2694, Dec. 2010.__Microwave and Optical Technology Letters__

**[2009]**

**[A68] C. H. Chen, R. Z. Hwang, L. S. Huang, S. M. Lin, H. C. Chen, Y. C. Yang, Y. T. Lin, S. A. Yu,**__Y. S. Lin__, Y. H. Wang, N. K. Chou, and S. S. Lu, "A Wireless Bio-MEMS Sensor for C-Reactive Protein Detection Based on Nanomechanics,", vol. 56, no. 2, pp. 462-470, Feb. 2009.__IEEE Trans. on Biomedical Engineering__**[A69] J. F. Chang, and**__Y. S. Lin__, "A 3-10 GHz Low-Power, Low-Noise CMOS Distributed Amplifier Using Splitting-Load Inductive Peaking and Noise-Suppression Techniques,", vol. 45, no. 20, pp. 1033-1035, 2009.__IET Electronics Letters__**[A70] J. F. Chang, and**__Y. S. Lin__, "Low-Power, High-Gain, and Low-Noise CMOS Distributed Amplifier for UWB Systems,", vol. 45, no. 12, pp. 634-636, 2009.__IET Electronics Letters__**[A71] P. L. Huang, J. F. Chang,**__Y. S. Lin__, and S. S. Lu, "A Micromachined V-Band CMOS Bandpass Filter with 2-dB Insertion-Loss,", vol. 45, no. 2, pp. 100-101, 2009.__IET Electronics Letters__**[A72] M. C. Lu, J. F. Chang,**__Y. S. Lin__, and L. C. Lu, "1.89-dB Insertion-Loss UWB BP-Filter with Three Finite Transmission Zeros Using Standard 0.18 mm CMOS Technology,", vol. 45, no. 1, pp. 56-57, 2009.__IET Electronics Letters__**[A73] C. W. Tsou, C. C. Chen, and**__Y. S. Lin__, "A 57-GHz CMOS VCO with 185.3% Tuning-Range Enhancement Using Tunable LC Source-Degeneration,", vol. 51, no. 11, pp. 2682-2684, Nov. 2009.__Microwave and Optical Technology Letters__**[A74] T. Wang, S. S. Lu,**__Y. S. Lin__, Y. Z. Juang, and G. W. Huang, "The RF Characteristics of Micromachined Coplanar Waveguide in 0.13 mm CMOS Technology by CMOS compatible ICP Dry Etching,", vol. 51, no. 11, pp. 2665-2668, Nov. 2009.__Microwave and Optical Technology Letters__**[A75] P. L. Huang, Y. T. Lin, T. Wang,**__Y. S. Lin__, and S. S. Lu, "A Micromachined SiGe HBT Ultra-Wideband Low-Noise Amplifier by BiCMOS Compatible ICP Deep-Trench Technology,", vol. 51, no. 11, pp. 2598-2601, Nov. 2009.__Microwave and Optical Technology Letters__**[A76]**__Y. S. Lin__, L. C. Lu, J. F. Chang, P. L. Huang, and S. S. Lu, "1.8-dB Insertion-Loss Planar UWB CMOS Bandpass Filter with Suspended Inductors,", vol. 51, no. 12, pp. 2946-2948, Dec. 2009.__Microwave and Optical Technology Letters__**[A77] Y. T. Lin,**__Y. S. Lin__, and S. S. Lu, "A Low-Power 2.4-GHz Receiver Front-End for Wireless Sensor Networks,", vol. 51, no. 12, pp. 3021-3024, Dec. 2009.__Microwave and Optical Technology Letters__**[A78] M. C. Lu, J. F. Chang, L. C. Lu, and**__Y. S. Lin__, "Miniature 60-GHz-Band Bandpass Filter with 2.55-dB Insertion-Loss Using Standard 0.13 m CMOS Technology", vol. 51, no. 7, pp. 1632-1635, Jul. 2009.__Microwave and Optical Technology Letters__**[A79] W. L. Hsu, C. Z. Chen, and**__Y. S. Lin__, "A 58-GHz Wide-Locking Range CMOS Direct Injection-Locked Frequency Divider Using Input-Power-Matching Technique,", vol. 51, no. 3, pp. 685-689, Mar. 2009.__Microwave and Optical Technology Letters__**[A80] W. L. Hsu, C. Z. Chen, and**__Y. S. Lin__, "A 2 mW, 55.8-GHz CMOS Injection-Locked Frequency Divider with 7.1-GHz Locking Range,", vol. 51, no. 3, pp. 702-706, Mar. 2009.__Microwave and Optical Technology Letters__**[A81]**__Y. S. Lin__, and S. S. Wong, "A 60-GHz Low-Noise Amplifier for 60-GHz Dual-Conversion Receiver,", vol. 51, no. 4, pp. 885-891, Apr. 2009.__Microwave and Optical Technology Letters__**[A82] T. H. Chang, C. Z. Chen, and**__Y. S. Lin__, "A Low-Power Low-Phase-Noise 48-GHz CMOS LC VCO for 60-GHz Dual-Conversion Receiver,", vol. 51, no. 4, pp. 997-1000, Apr. 2009.__Microwave and Optical Technology Letters__**[A83] C. C. Chen,**__Y. S. Lin__, G. W. Huang, and S. S. Lu, "A 5.79 dB NF, 30-GHz-Band Monolithic LNA with 10 mW Power Consumption in Standard 0.18 m CMOS Technology,", vol. 51, no. 4, pp. 933-937, Apr. 2009.__Microwave and Optical Technology Letters__

**[2008]**

**[A84] C. C. Chen, J. H. Lee,**__Y. S. Lin__, C. Z. Chen G. W. Huang, and S. S. Lu, "Low Noise-Figure P+-AA-Mesh Inductors for CMOS UWB RFIC Applications,, vol. 55, no. 12, pp. 3542-3548, Dec. 2008.__IEEE Trans. on Electron Devices__**[A85] H. Y. Yang,**__Y. S. Lin__, and C. C. Chen, "A 2.5-dB NF 3.1-10.6-GHz CMOS UWB LNA with Small Group-Delay-Variation,", vol. 44, no. 8, pp. 528-529, 2008.__IET Electronics Letters__**[A86] H. Y. Yang,**__Y. S. Lin__, and C. C. Chen, "A 21-27 GHz CMOS Wideband LNA with 9.3±1.3 dB Gain and 103.9±8.1 ps Group-Delay Using Standard 0.18 m CMOS Technology,", vol. 44, no. 17, pp. 1014-1016, 2008.__IET Electronics Letters__**[A87] J. F. Chang,**__Y. S. Lin__, C. C. Chen, C. Z. Chen, T. Wang, and S. S. Lu, "A Miniature Micro- machined Millimeter-wave Bandpass Filter By CMOS Compatible ICP Deep-Trench Technology,", vol. 47, no. 1, 2008, pp. 68-73.__Japanese Journal of Applied Physics__**[A88] H. B. Liang, Y. H. Tsou,**__Y. S. Lin__, and C. C. Chen, "Uniformly Distributed Wideband Metal-Oxide-Semiconductor Field-Effect Transistor Model for Complementary Metal-Oxide-Semiconductor Radio-Frequency Integrated Circuits Applications,", vol. 47, no. 2, 2008, pp. 807-813.__Japanese Journal of Applied Physics__**[A89] J. F. Chang,**__Y. S. Lin__, C. C. Chen, C. Z. Chen, P. L. Huang, T. Wang, and S. S. Lu, "An Analysis of Substrate Effects on Transmission-Lines for Millimeter-wave CMOS RFIC Applications,", vol. 50, no. 2, pp. 319-324, Feb. 2008.__Microwave and Optical Technology Letters__**[A90] C. C. Chen,**__Y. S. Lin__, J. F. Chang, and J. H. Lee, "A K-Band Low-Noise Amplifier Using Shunt RC-Feedback and Series Inductive-Peaking Techniques,", vol. 50, no. 5, pp. 1148-1152, May 2008.__Microwave and Optical Technology Letters__**[A91] J. H. Lee, C. C. Chen, and**__Y. S. Lin__, "A High-Performance Wideband CMOS Low-Noise Amplifier Using Inductive Series and Parallel Peaking Techniques,", vol. 50, no. 5, pp. 1240-1244, May 2008.__Microwave and Optical Technology Letters__**[A92] H. Y. Yang,**__Y. S. Lin__, and C. C. Chen, "A Low-Power V-Band CMOS Low-Noise Amplifier Using Current-Sharing Technique,", vol. 50, no. 7, pp. 1876-1879, Jul. 2008.__Microwave and Optical Technology Letters__**[A93] C. Z. Chen, H. Y. Fang,**__Y. S. Lin__, C. C. Chen, and G. W. Huang, "A 5-GHz Fully Integrated Low-Power Wide-Tuning-Range CMOS LC VCO,", vol. 50, no. 9, pp. 2320-2322, Sep. 2008.__Microwave and Optical Technology Letters__**[A94] W. L. Hsu, C. Z. Chen, and**__Y. S. Lin__, "A Low-Power 63 GHz CMOS Direct Injection-Locked Frequency Divider in 0.13 mm CMOS Technology,", vol. 50, no. 10, pp. 2581-2584, Oct. 2008.__Microwave and Optical Technology Letters__**[A95] J. H. Lee, C. C. Chen, and**__Y. S. Lin__, "5.8-GHz Fully Integrated Low-Power Low-Phase- Noise CMOS LC VCOs Using RC Noise-Filtering Technique,", vol. 50, no. 11, pp. 2907-2911, Nov. 2008.__Microwave and Optical Technology Letters__**[A96] P. L. Huang, T. Wang,**__Y. S. Lin__, and S. S. Lu, "Micromachined CMOS E-band Bandpass Coplanar Filters,", vol. 50, no. 12, pp. 3123-3125, Dec. 2008.__Microwave and Optical Technology Letters__**[A97] P. L. Huang, T. Wang,**__Y. S. Lin__, S. S. Lu, Y. M. Teng, and G. W. Huang, "Micromachined 50 GHz/60 GHz Phi Filters by CMOS Compatible ICP Deep Trench Technology,", vol. 50, no. 12, pp. 3142-3146, Dec. 2008.__Microwave and Optical Technology Letters__

**[2007]**

**[A98]**__Y. S. Lin__, C. Z. Chen, H. B. Liang, and S. S. Lu, "High-Performance On-Chip Transformers with Partial Polysilicon Patterned Ground Shields (PGS),", vol. 54, no. 1, pp. 157-160, 2007.__IEEE Trans. on Electron Devices__**[A99]**__Y. S. Lin__, C. C. Chen, H. B. Liang, P. K. Tsai, T. Wang, and S. S. Lu, "A High-Performance Micromachined RF Monolithic Transformer with Optimized Pattern Ground Shields (OPGS) for UWB RFIC Applications,", vol. 54, no. 3, pp. 609-613, 2007.__IEEE Trans. on Electron Devices__**[A100] Y. T. Lin, H. C. Chen, T. Wang,**__Y. S. Lin__, and S. S. Lu, "3-10 GHz Ultra-Wideband Low Noise Amplifiers Utilizing Miller Effect and Inductive Shunt-Shunt Feedback Technique,", vol. 55, no. 9, pp. 1832-1843, 2007.__IEEE Trans. on Microwave Theory and Technologies__**[A101]**__Y. S. Lin__, J. F. Chang, H. B. Liang, T. Wang, and S. S. Lu, "High-Performance Transmission-Line Inductors for 30-60 GHz RFIC Applications,", vol. 54, no. 9, pp. 2512-2519, 2007.__IEEE Transactions on Electron Devices__**[A102] J. H. Lee, C. C. Chen, and**__Y. S. Lin__, "A 0.18 mm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4 dB Gain and 100.7±17.4 ps Group-Delay,", vol. 43, no. 24, pp. 27-28.__IEE Electronics Letters__**[A103]**__Y. S. Lin__, C. C. Chen, H. B. Liang, T. Wang, and S. S. Lu, "Characterization and Modeling of Pattern Ground Shield (PGS) and Silicon-Substrate Effects on Radio-Frequency (RF) Monolithic Bifilar Transformers for Ultra-Wide Band (UWB) Radio-Frequency Integrated Circuit (RFIC) Applications,", vol. 46, no. 1A, pp. 65-70, 2007.__Japanese Journal of Applied Physics__**[A104] T. Wang,**__Y. S. Lin__, and S. S. Lu, "A Micromachined 22 GHz PI Filter by CMOS Compatible ICP Deep Trench Technology,", no. 7, vol. 43, pp. 398-399, 2007.__IEE Electronics Letters__**[A105]**__Y. S. Lin__, Z. H. Yang, C. C. Chen, and T. C. Chao, "Design and Implementation of a Miniaturized High-Linearity 3-5 GHz Ultra-wideband CMOS Low-Noise Amplifier,", vol. 49, no. 3, pp. 524-526, 2007.__Microwave and Optical Technology Letters__**[A106]**__Y. S. Lin__, C. C. Chen, H. B. Liang, M. S. Huang, "Analyses and Wideband Modeling (DC-to-50GHz) of Dummy Open Devices on Silicon for Accurate RF Devices and ICs De-embedding Applications,", vol. 49, no. 4, pp. 879-882, 2007.__Microwave and Optical Technology Letters__**[A107]**__Y. S. Lin__, C. C. Chen, H. B. Liang, P. F. Yeh, T. Wang, and S. S. Lu, "High-Performance Single-Turn Interlaced-Stacked Transformers for Ka-Band CMOS RFIC Applications,", vol. 49, no. 4, 2007, pp. 936-942.__Microwave and Optical Technology Letters__**[A108] S. H. Yen,**__Y. S. Lin__, and C. C. Chen, "Design and Implementation of a 1.5-to-17-GHz SiGe UWB LNA utilizing Multiple-Feedback Loops and Inductive Peaking Technique,", vol. 49, no. 4, 2007, pp. 876-879.__Microwave and Optical Technology Letters__**[A109]**__Y. S. Lin__, C. C. Chen, C. Z. Chen, and P. F. Yeh, "High-Coupling and Ultra-Low-Loss Interlaced Stacked Transformers for 60-100 GHz CMOS RFIC Applications,", vol. 49, no. 7, July 2007, pp. 1750-1753.__Microwave and Optical Technology Letters__**[A110] S. H. Yen, C. Z. Chen,**__Y____.____S____.____Lin__, and C. C. Chen, "A High-Performance 1-7 GHz UWB LNA Using Standard 0.18 mm CMOS Technology,", vol. 49, no. 10, Oct. 2007, pp. 2458-2462.__Microwave and Optical Technology Letters__**[A111] J. F. Chang,**__Y. S. Lin__, and C. C. Chen, "A High-Performance Miniaturized 3-15.5-GHz 13-dB CMOS Distributed Amplifier,", vol. 49, no. 11, Nov. 2007, pp. 2742-2747.__Microwave and Optical Technology Letters__

**[2006]**

**[A112] Y. C. Yang, P. W. Lee, H. W. Chiu,**__Y. S. Lin__, G. W. Huang, and S. S. Lu, "Reconfigurable SiGe Low Noise Amplifiers with Variable-Miller- Capacitance,", vol. 53, no. 12, pp. 2567-2577, 2006.__IEEE Trans. on Circuits and Systems –I__**[A113] H. B. Liang,**__Y. S. Lin__, C. C. Chen, P. F. Yeh, Y. R. Tzeng, T. Wang, and S. S. Lu, "An Analysis of Perfect-Magnetic-Coupling Ultra-Low-Loss Micromachined SMIS RF Transformers for RFIC Applications,", vol. 54, no. 12, pp. 4256-4267, 2006.__IEEE Trans. on Microwave Theory and Techniques__**[A114] S. H. Yen, and**__Y. S. Lin__, "A Ka-Band Low Noise Amplifier Using Standard 0.18 mm CMOS Technology,", vol. 42, no. 16, pp. 919-920, Aug. 2006.__IEE Electronics Letters__**[A115]**__Y. S. Lin__, H. B. Liang, C. C. Chen, T. Wang, and S. S. Lu, "A High-Quality-Factor and Low-Power-Loss Micromachined RF Bifilar Transformer for Ultra-Wideband (UWB) RFIC Applications,"__IEEE Electron Device____Letters__, vol. 27, no. 8, pp. 684-687, 2006.**[A116] H. W. Chiu,**__Y. S. Lin__, K. Liu, and S. S. Lu, "Temperature and Substrate Effects in Monolithic RF Inductors on Silicon with 6-mm-Thick Top Metal for RFIC Applications,"__IEEE Trans. on Semiconductor Manufacturing__**[A117] T. Wang,**__Y. S. Lin__, and S. S. Lu, "An Ultra-Low-Loss and Broadband Micomachined RF Inductor for RFIC Input-Matching Applications,"__IEEE Trans. on Electron Devices__**[A118] T. Wang, C. H. Chen,**__Y. S. Lin__, and S. S. Lu, "A Micro-machined 2-10 GHz CMOS Distributed Amplifier By CMOS Compatible ICP Deep Trench Technology,", vol. 27, no. 4, pp. 291-293, 2006.__IEEE Electron Device Letters__**[A119] T. Wang, H. C. Chen, H. W. Chiu,**__Y. S. Lin__, G. W. Huang, and S. S. Lu, "Micromachined CMOS LNA and VCO By CMOS Compatible ICP Deep Trench Technology,", vol. 54, no. 2, pp. 580-588, 2006.__IEEE Trans. on Microwave Theory and Techniques__**[A120]**__Y. S. Lin__, C. C. Chen, and S. S. Lu, "An Analysis of Base Bias Current and Intrinsic Base Resistance Effects on InP-InGaAs, InGaP-GaAs and SiGe Heterojunction Bipolar Transistors,"__Japanese Journal of Applied Physics__**[A121]**__Y. S. Lin__, and K. N. Liao, "A Concurrent Multi-Band InGaP-GaAs HBT LNA for 1.8/1.9 GHz GSM, 2.4/4.9/5.2/5.7 GHz WLAN and 5-7 GHz Ultra-Wide-Band (UWB) System Applications,"__Microwave and Optical Technology Letters__**[A122]**__Y. S. Lin__, H. B. Liang, and Y. R. Tzeng, "An Analysis of Layout and Temperature Effects on Magnetic-Coupling Factor, Resistive-Coupling Factor, and Power Gain Performances of RF Transformers for RFIC Applications,"__Microwave and Optical Technology Letters__

**[2005]**

**[A123]**__Y. S. Lin__, "Implementation of Perfect-Magnetic-Coupling Ultra-Low-Loss Transformer in RFCMOS Technology,"., vol. 26, no.11, pp. 832-835, 2005.__IEEE Electron Device Letters__**[A124]**__Y. S. Lin__, "An Analysis of Small-Signal Source-Body Resistance Effect on RF MOSFETs for Low-Cost System-on-Chip (SoC) Applications,"__IEEE Trans. on Electron Devices__**[A125]**__Y. S. Lin__, "Temperature and Substrate-Impedance Dependence of Noise Figure of Monolithic RF Inductors on Silicon,", vol. 26, no. 6, pp. 397-400, 2005.__IEEE Electron Device Letters__**[A126]**__Y. S. Lin,__H. B. Liang, T. Wang, and S. S. Lu, "Temperature-Dependence of Noise Figure of Monolithic RF Transformers on a Thin (20 mm) Silicon Substrate,"__IEEE Electron Device Letters__**[A127]**__Y. S. Lin__, and S. S. Lu, "An Analysis of Base Bias Current Effect on SiGe Heterojunction Bipolar Transistors (HBTs),"__IEEE Trans. on Electron Devices__**[A128] H. W. Chiu, S. S. Lu, and**__Y. S. Lin,__"A 2.17 dB NF, 5 GHz Band Monolithic CMOS LNA with 10 mW DC Power Consumption on a Thin (20 mm) Substrate,"__IEEE Trans. on Microwave Theory and Techniques__**[A129] S. S. Lu,**__Y. S. Lin__, H. W. Chiu, Y. C. Chen, and C. C. Meng, "The Determination of S parameters from the Poles of Voltage Gain Transfer Function for RF IC Design,"__IEEE Trans. on Circuits and Systems - I__**[A130]**__Y. S. Lin__, J. L. Chen, and K. H. Chen, "Variable Inductance Planar Spiral Inductors And CMOS Wideband Amplifiers with Inductive Peaking,", vol. 47, no. 4, pp. 305-309, 2005.__Microwave and Optical Technology Letters__**[A131]**__Y. S. Lin__, and K. N. Liao, "A Concurrent Multi-Band SiGe LNA for 1.8/1.9GHz GSM, 2.4/5.2/5.7GHz WLAN and 5-7 GHz Ultra-Wide-Band (UWB) System Applications,"__Microwave and Optical Technology Letters__**[A132]**__Y. S. Lin__, "Temperature Dependence of the Power Gains and Scattering Parameters S11 and S22 of an RF nMOSFET with an Advanced RF-CMOS Technology,"vol. 44, no. 2, pp. 180-185, 2005.__Microwave and Optical Technology Letters__,**[A133] C. L. Tai, S. S. Lu, and**__Y. S. Lin__, "A 5.2 GHz Low-Power Low-Noise Amplifier Using InGaP-GaAs HBT Technology,"__Microwave and Optical Technology Letters__,**[A134]**__Y. S. Lin__, and C. C. Chen, "A High-Linearity Micro-mixer for 5-GHz Band WLAN Applications Using 0.35 mm SiGe BiCMOS Technology,"__Microwave and Optical Technology Letters__,

**[2004]**

**[A135] K. Y. Yeh, S. S. Lu, and**__Y. S. Lin__, "Monolithic InGaP-GaAs HBT Receiver Front-End with 6 mW DC Power Consumption for 5-GHz-Band WLAN Applications,"__IET Electronics Letters__**[A136]**__Y. S. Lin__, "An Analysis of Size Effect on the Performances of Low-leakage 0.10 mm CMOS for 5-GHz Band Low-Power RF-ICs and SRAMs Applications,", vol. 43, no. 8A, pp. 5178-5185, 2004.__Japanese Journal of Applied Physics__**[A137]**__Y. S. Lin__, and S. S. Lu, "An Analysis of the Anomalous Dip in Scattering Parameter S11 of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs),"vol. 43, no. 6B, pp. L803-L805, 2004.__Japanese Journal of Applied Physics__,**[A138]**__Y. S. Lin,__and T. H. Lee, "Analysis, Design, and Optimization of Matched-Impedance Wide-Band Amplifiers With Multiple Feedback Loops Using 0.18 m CMOS Technology,"vol. 43, no. 10, pp. 6912-6916, 2004.__Japanese Journal of Applied Physics__,**[A139]**__Y. S. Lin__, "Temperature-Dependence of the Q-Factor and Noise Figure (NF) Performances of a Spiral Inductor with an Advanced Mixed-Signal/RF Complementary Metal-Oxide-Semiconductor (CMOS) Technology,"vol. 43, no. 10, pp. 6907-6911, 2004.__Japanese Journal of Applied Physics__,**[A140] C. Y. Wang, S. S. Lu, C. C. Meng, and**__Y. S. Lin__, "A GaInP/GaAs HBT Micromixer for 2.4/5.2/5.7 Multi-band WLAN Applications,"vol. 43, no. 1, pp. 87-89, Oct. 5, 2004.__Microwave and Optical Technology Letters__,**[A141]**__Y. S. Lin__, and C. C. Chen, "An InGaP-GaAs HBT Low Noise Amplifier for 2.4/5.2/5.7 GHz WLAN Applications,"vol. 43, no. 6, pp. 539-542, Dec. 20, 2004.__Microwave and Optical Technology Letters__,**[A142] T. H. Lee, and**__Y. S. Lin__, "A 3 mW Concurrent 2.4/5.2 GHz Dual-Band Low Noise Amplifier for WLAN Applications in 0.18 m CMOS Technology,"vol. 42, no. 4, pp. 287-292, August 20, 2004.__Microwave and Optical Technology Letters__,**[A143] C. Y. Wang, S. S. Lu, C. C. Meng, and**__Y. S. Lin__, "A SiGe Micromixer for 2.4/5.2/5.7 GHz Multi-band WLAN Applications,"vol. 41, no. 5, pp. 343-346, June 5, 2004.__Microwave and Optical Technology Letters__,**[A144] S. S. Lu,**__Y. S. Lin__, and B. W. Lee, "A Monolithic 1.57/5.25 GHz Concurrent Dual-Band Low Noise Amplifier Using InGaP/GaAs HBT Technology,"vol. 42, no. 1, pp. 58-60, July 5, 2004.__Microwave and Optical Technology Letters__,**[A145] K. N. Liaw, and**__Y. S. Lin__, "A Miniaturized Monolithic 2.4/5.7 GHz Concurrent Dual-Band Low Noise Amplifier Using InGaP-GaAs HBT Technology,"vol. 1, no. 1, pp. 120-123, 2004.__WSEAS Trans. on Electronics__,**[A146] H. B. Liang, T. Wang,**__Y. S. Lin__, S. H. Wu, and S. S. Lu, "Temperature Dependence of Q and Noise in Monolithic Transformer Fabricated in a Silicon-Germanium/BiCMOS Technology,", vol. 1, no. 1, pp. 149-156, 2004.__WSEAS Trans. on Electronics__**[A147]**__Y. S. Lin__, H. W. Choi, and S. S. Lu, "High Quality-Factor (33) and High Resonant Frequency (> 20 GHz) Spiral Inductors Fabricated in 0.25 mm RF Mixed-Signal CMOS Technology,"vol. 41, no. 4, pp. 279-285, May 20, 2004.__Microwave and Optical Technology Letters__,**[A148]**__Y. S. Lin__, "An Analysis of RF Scattering Parameters, Noise and Power Performances of RF Power MOS in 0.15 mm RF CMOS Technology for RF SOC Applications,"vol. 41, no. 3, pp. 191-196, May 5, 2004.__Microwave and Optical Technology Letters__,

**[2003]**

**[A149]**__Y. S. Lin__, C. C. Chen, and S. S. Lu, "Ga0.51In0.49P/InxGa1-xAs/GaAs Doped-Channel FETs (DCFETs) and their Applications on Monolithic Microwave Integrated Circuits (MMICs),"vol. 39, no. 1, pp. 56-62, 2003.__Microwave and Optical Technology Letters__,**[A150]**__Y. S. Lin__and S. S. Lu, "An Analysis of Small-Signal Gate-Drain Resistance Effect on RF Power MOSFETs,", vol. 50, no. 2, pp. 525-528, 2003.__IEEE Trans. on Electron Devices__**[A151] H. Y. Tu, T. H. Chou,**__Y. S. Lin__, H. C. Chiu, P. Y. Chen, and S. S. Lu, "DC and RF Characteristics of E-mode Ga0.51In0.49P/In0.15Ga0.85As Pseudomorphic HEMT’s (pHEMT’s),"vol. 50, no. 3, pp. 132-134, 2003.__IEEE Electron Device Letters__,**[A152]**__Y. S. Lin__and S. S. Lu, "An analysis of Small-Signal Substrate Resistance Effect in Deep Sub-micron RF MOSFETs,"vol. 51, no. 5, pp. 1534-1539, 2003.__IEEE Trans. on Microwave Theory and Techniques__,**[A153]**__Y. S. Lin__, "Low-leakage 0.11 mm CMOS for Low-Power RF-ICs and SRAMs Applications,", vol. 42, no. 4B, pp. 2114-2118, 2003.__Japanese Journal of Applied Physics__**[A154]**__Y. S. Lin__, and S. S. Lu, "Theoretical Analysis of the Anomalous Dips of Scattering Parameter S22 in Deep Sub-Micrometer MOSFETs,", vol. 36, no. 3, pp. 193-200, Feb. 5, 2003.__Microwave and Optical Technology Letters__**[A155]**__Y. S. Lin__, and S. S. Lu, "An Analysis of the Kink Phenomenon of Scattering Parameter S22 in RF Power MOSFETs for System-on-Chip (SOC) Applications,", vol. 36, no. 5, pp. 371-376, 2003.__Microwave and Optical Technology Letters__**[A156]**__Y. S. Lin__, "A novel Y-Shaped Multi-Fin Stacked Capacitor for Dynamic Random Access Memory (DRAM) cells,", vol. 6, no. 2, pp. 203-212, 2003.__National Chi-Nan University Journal__

**[2002]**

**[A157]**__Y. S. Lin__, C. C. Wu, C. S. Chang, R. P. Yang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "Leakage Scaling in Deep Sub-micron CMOS for SOC,", vol. 49, no. 6, pp. 1034-1041, 2002.__IEEE Trans. on Electron Devices__**[A158]**__Y. S. Lin__, H. T. Huang, C. C. Wu, Y. K. Leung, H. Y. Pan, T. E. Chang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "On the SiO2 Based Gate-Dielectric Scaling Limit for Low-Standby Power Applications in the Context of a 0.13 m CMOS Logic Technology,", vol. 49, no. 3, 442-448, 2002.__IEEE Trans. on Electron Devices__**[A159]**__Y. S. Lin__, and H. M. Hsu, "Study of Spiral Inductors Using Cu/Low-k Interconnect for High-Performance RF-IC Applications,", vol. 34, no. 1, pp. 43-48, July 5, 2002.__Microwave and Optical Technology Letters__**[A160]**__Y. S. Lin__, and H. M. Hsu, "High-Performance Micromachined Tapered Spiral Inductors with Resonant Frequency of 17 GHz,", vol. 35, no. 1, pp. 56-60, October 5, 2002.__Microwave and Optical Technology Letters__**[A161] H. Y. Tu,**__Y. S. Lin__, P. Y. Chen, S. S. Lu, and H. Y. Pan, "An Analysis of the Anomalous Dip in Scattering Parameter S22 of InGaP-GaAs Heterojunction Bipolar Transistors (HBTs),", vol. 49, no. 10, pp. 1831-1833, 2002.__IEEE Trans. on Electron Devices__

**[1992]-[1999]**

**[A162]**__Y. S. Lin__, and S. S.Lu, "S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFETs as Active Devices,", vol. 20, no. 3, pp. 188-190, 1999.__Microwave and Optical Technology Letters__**[A163**__]____Y. S. Lin__, and S. S.Lu, "Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect Transistors Grown by Gas Source Molecular Beam Epitaxy,", vol. 85, no. 4, pp. 2197-2201, 1999.__Journal of Applied Physics__**[A164] S. S. Lu, C .C. Meng,**__Y. S. Lin__, and H. Lan, "The Effect of Gate Recess Profile on Device Performance of Ga0.51In0.49P/In0.2Ga0.8As Doped-Channel FET’s,", vol. 46, no. 1, pp. 48-54, 1999.__IEEE Trans. on Electron Devices__**[A165]**__Y. S. Lin__, S. S. Lu and Y. J. Wang, "High-Performance Ga0.51In0.49P/GaAs Airbridge Gate MISFET’s Grown by Gas-Source MBE,"__IEEE Trans. on Electron Devices__**[A166]**__Y. S. Lin__, T. P. Sun and S. S. Lu, "Ga0.51In0.49P/In0.15Ga0.85As/GaAs Pseudomorphic Doped-Channel FET with High-Current Density and High-Breakdown Voltage,", vol. 18, no. 4, pp. 150-152, 1997.__IEEE Electron Device Letters__**[A167]**__Y. S. Lin__, and S. S. Lu, "High-Breakdown-Voltage Ga0.51In0.49P Channel MESFET Grwon by GSMBE,", vol. 17, no. 9, pp. 452-454, 1996.__IEEE Electron Device Letters__**[A168]**__Y. S. Lin__, S. S. Lu and T. P. Sun, "High-Linearity High-Current-Drivability Ga0.51In0.49P/GaAs MISFET Using GaInP Airbridge Gate Structure Grown by Gas-Source MBE,", vol. 16, no. 11, pp. 518-520, 1995.__IEEE Electron Device Letters__**[A169]**__Y. S. Lin__, C. J. Chen, G. Y. Wu and K. M. Hung, "Magneto-Excitons in Quantum Wells in Parallel-Field Configurations,", vol. 84, no. 7, pp. 753-756, 1992.__Solid State Communications__

__B____、____Conference Papers (____會議論文____)__

**[2014]**

**[B1]**__Y. S. Lin__, and G. H. Li, "A W-Band Down-Conversion Mixer in 90 nm CMOS with Excellent Matching and Port-to-Port Isolation for Automotive Radars,"*2014 Eleventh International Symposium on Wireless Communication Systems**(ISWCS)*, Barcelona, Spain.**[B2]**__Y. S. Lin__, C. C. Wang, W. C. Wen, and T. M. Tsai, "A 12.1 mW 50~67 GHz Up-Conversion Mixer with 6 dB Conversion Gain and 30.7 dB LO-RF Isolation in 90 nm CMOS,"*2014**IEEE Radio and Wireless Symposium*, Newport Beach, California, USA.**[B3]**__Y. S. Lin__, C. C. Wang, and J. H. Lee, "A 9.96 mW 3.24±0.5 dB NF 1.9~22.5 GHz Wideband Low-Noise Amplifier Using 90 nm CMOS Technology,"*2014**IEEE Radio and Wireless Symposium*, Newport Beach, California, USA.**[B4]**__Y. S. Lin__, G. L. Lee, C. C. Wang, and C. C. Chen, "A 21.1 mW 6.2 dB NF 77~81 GHz CMOS Low-Noise Amplifier with 13.5±0.5 dB S21 and Excellent Input and Output Matching for Automotive Radars,"*2014**IEEE Radio and Wireless Symposium*, Newport Beach, California, USA.**[B5]**__Y. S. Lin__, C. Y. Lee, C. C. Wang, and C. C. Chen, "A 10 mW 8.1 dB NF 77~81 GHz CMOS Low-Noise Amplifier with 11.3±0.5 dB S21 and Excellent Input and Output Matching for Automotive Radars,"*Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT)*, HF-04, Hsinchu, Taiwan.**[B6] G. H. Li,**__Y. S. Lin__, and C. C. Chen, "A 79 GHz Down-Conversion Mixer with Negative Resistance Compensation in 90 nm CMOS,"*Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT)*, HF-08, Hsinchu, Taiwan.**[B7] L. C. Liu, and**__Y. S. Lin__, "Design and Implementation of a High-Performance W-Band Up-Conversion Mixer in 90 nm CMOS,"*Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT)*, HF-09, Hsinchu, Taiwan.**[B8]**__Y. S. Lin__, F. C. Liu, W. C. Wen, and C. C. Wang, "Design and Implementation of Squared W-Band CMOS Marchand Balun for W-Band Communication Systems,"*Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT)*, HF-10, Hsinchu, Taiwan.**[B9] B. H. Liu,**__Y. S. Lin__, and C. C. Wang, "Design of Sigma-Delta DAC for Intra-Body Communication (IBC) Platform Application,"*Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT)*, HF-11, Hsinchu, Taiwan.**[B10] K. L. Lin, and**__Y. S. Lin__, "Filterless Class-D Audio Power Amplifier (PA) with Multi-Level Converter for Implementation of Intra-Body Communication (IBC) Hub/Alarm Unit in IBC Platform for Fall Prevention System,"*Proceedings of 21TH Symposium on Nano Device Technology (2014 SNDT)*, HF-13, Hsinchu, Taiwan.

**[2013]**

**[B11] R. C. Liu,**__Y. S. Lin__, W. C. Wen, and C. C. Wang, "Design and Implementation of a High-Performance 79 GHz Up-Conversion Mixer in 90 nm CMOS,"*2013**National Symposium on Telecommunications*, E4-3, Tainan, Taiwan.**[B12]**__Y. S. Lin__, C. C. Wang, Y. C. Liao, and S. S. Lu, "BFSK Receiver, and Audio DAC and PA in Hub/Alarm Unit of Intra-Body Communication (IBC) Platform for Fall Prevention System,"*The 12th International Conference on Automation Technology*, pp. 131-138, Tainan, Taiwan.**[B13] J. F. Chang,**__Y. S. Lin__, and C. C. Wang, "A High-Voltage Driving 60 GHz Power Amplifier with Psat of 13 dBm and PAE of 9.1% in 90 nm CMOS for IEEE 802.11ad Communication Systems,"*2013**IEEE International Symposium on Electromagnetic Compatibility*, Denver, Colorado, USA.**[B14] C. C. Wang, T. M. Tsai,**__Y. S. Lin__, and W. C. Wen, " A Low Power and High Conversion Gain 60-GHz CMOS Up-Conversion Mixer Using Current Injection and Dual Negative Resistance Compensation Techniques,"*2013**IEEE International Symposium on Electromagnetic Compatibility*, Denver, Colorado, USA.**[B15] C. C. Wang,**__Y. S. Lin__, and J. H. Lee, "60 GHz CMOS Down-Conversion Mixer with 15.46 dB Gain and 64.7 dB LO-RF Isolation,"*2013**IEEE International Symposium on Antennas and Propagation and USNC-URSI National Radio Science Meeting*, Orlando, Florida, USA.**[B16] J. H. Lee, and**__Y. S. Lin__, "A 3.88-dB NF 60-GHz CMOS UWB LNA with 14.1-mW DC Power Consumption,"*2013**IEEE International Symposium on Antennas and Propagation and USNC-URSI National Radio Science Meeting*, Orlando, Florida, USA.**[B17] P. Y. Yin, Y. H. Chen, C. W. Lu, S. S. Shyu, C. L. Lee, T. C. Ou, and**__Y. S. Lin__, "A Multi-Stage Fault-Tolerant Multiplier with Triple Module Redundancy (TMR) Technique," IEEE Fourth International Conference on Intelligent Systems, Modelling and Simulation (ISMS), Bangkok, Thailand.**[B18] P. Y. Yin, C. W. Lu, C. Y. Hsu, and**__Y. S. Lin__, "An 11-bit Two-Stage Hybrid-DAC for TFT LCD Column Drivers," IEEE Fourth International Conference on Intelligent Systems, Modelling and Simulation (ISMS), Bangkok, Thailand.**[B19]**__Y. S. Lin__, and C. C. Wang, "A 24-GHz Power Amplifier with Psat of 15.9 dBm and PAE of 14.6% Using Standard 0.18 μm CMOS Technology,"*Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT)*, HF-01, Hsinchu, Taiwan.**[B20] J. N. Chang,**__Y. S. Lin__, and C. C. Wang, "A High-Performance CMOS Power Amplifier for 60 GHz Short-Range Communication Systems,"*Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT)*, HF-02, Hsinchu, Taiwan.**[B21] C. H. Wu,**__Y. S. Lin__, and C. C. Wang, "A 3.1~10.6 GHz Current-Reused CMOS Ultra-Wideband Low-Noise Amplifier Using Self-Forward Body Bias and Forward Combining Techniques,"*Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT)*, HF-03, Hsinchu, Taiwan.**[B22] Y. H. Wang, C. C. Wang, and**__Y. S. Lin__, "A 3.1-10.6 GHz CMOS Wide Band LNA Using Standard 0.18 μm CMOS Technology,"*Proceedings of 20TH Symposium on Nano Device Technology (2013 SNDT)*, HF-04, Hsinchu, Taiwan.

**[2012]**

**[B23] C. H. Wu,**__Y. S. Lin__, J. H. Lee, C. C. Wang, "A 2.87±0.19 dB NF 3.1-10.6 GHz Ultra-Wideband Low-Noise Amplifier Using 0.18 m CMOS Technology,", Santa Clara, California, USA__2012 IEEE Radio and Wireless Symposium__*,*pp. 227-230.**[B24] J. F. Chang,**__Y. S. Lin__, J. H. Lee, C. C. Wang, "A Low-Power 3.2-9.7 GHz Ultra-Wideband Low Noise Amplifier with Excellent Stop-Band Rejection Using 0.18 mm CMOS Technology,"*2012*, Santa Clara, California, USA__IEEE Radio and Wireless Symposium__*,*pp. 199-202.**[B25] J. H. Lee, T. M. Tsai, and Y. S. Lin, "15.1 mW 60 GHz Up-Conversion Mixer with 4.5 dB Gain and 57.5 dB LO-RF Isolation,"**, Section S1-5, paper 1142, Changhua, Taiwan.__2012 National Symposium Telecommunications__**[B26] J. H. Lee, Y. C. Chen,**__Y. S. Lin__, and S. S. Lu, "A 21-27 GHz CMOS Receiver Front-End with a Novel Double-Balanced Mixer and Integrated Balun for Automotive Radar Systems,"*Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT)*, HF-02, Hsinchu, Taiwan.**[B27] C. C. Wang,**__Y. S. Lin__, and P. W. Yu, "A 28/56 GHz Dual-Band CMOS VCO Using Reversely Tunable LC Source-Degeneration and the Push-Push Technique,"*Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT)*, HF-02, Hsinchu, Taiwan.**[B28] J. H. Lee, J. F. Chang, and**__Y. S. Lin__, "A 3.15 dB NF, 7.2 mW 3~9 GHz Ultra-Wideband Receiver Front-End for UWB Systems Using 0.18 mm CMOS Technology,"*Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT)*, HF-02, Hsinchu, Taiwan.**[B29] C. C. Wang,**__Y. S. Lin__, and P. W. Yu, "A Miniature and Low-Power 24 GHz CMOS VCO Using Tunable LC Source-Degeneration and Transformer Feedback Techniques for Automotive Radars,"*Proceedings of 19TH Symposium on Nano Device Technology (2012 SNDT)*, HF-02, Hsinchu, Taiwan.

**[2011]**

**[B30] C. C Wang, C. Y. Lin, C. H. Cheng, and Y. S. Lin, "1-dB Insertion-Loss 1~14.3 GHz Ultra-Wideband Bandpass Filter Using Standard 0.18-mm CMOS Technology,"***2011 International Conference on Electrical and Control Engineering*, Yichang, China, pp. 1-4.**[B31] S. L. Huang,**__Y. S. Lin__, and J. H. Lee, "A Low-Power and Low-Noise 21~29 GHz Ultra-Wideband Receiver Front-End in 0.18 m CMOS Technology,"*2011*, San Jose, California, USA, pp. 1-4.__IEEE Custom Integrated Circuits Conference__**[B32] J. F. Chang, and**__Y. S. Lin__, "A DC-10.5-GHz CMOS Distributed Amplifier with 3.2±0.3 dB NF, 10.5±1.4 dB Gain and ±13.8 ps Group Delay Variation," to appear in*Proceedings of 2011*, Phoenix, Arizona, USA__IEEE Radio and Wireless Symposium__(2011 IEEE RWS)*,*pp. 307-310.**[B33] J. F. Chang, and**__Y. S. Lin__, "2.76 mW, 3-10 GHz Ultra-Wideband LNA Using 0.18 μm CMOS Technology,"*Proceedings of 2011*, Hsin-Chu, Taiwan, pp. 188-191.__IEEE VLSI Design, Automation and Test__(2011 VLSI DAT)**[B34] C. Z. Wang, C. C. Wang,**__Y. S. Lin__, and G. W. Huang, "A 2.28 mW 80.8 GHz CMOS Divide-by-4 DILFD with 18.24% Locking Range Using Tunable LC Source-Degeneration,"*Proceedings of 2011*, Hsin-Chu, Taiwan, pp. 307-310.__IEEE VLSI Design, Automation and Test__(2011 VLSI DAT)**[B35] C. C. Chen,**__Y. S. Lin__, J. H. Lee, and J. F. Chang, "A V-band CMOS Sub-Harmonic Mixer with Integrated Frequency Doubler and 180o Out-of-Phase Splitter,"*Proceedings of 2011*, Hsin-Chu, Taiwan, pp. 192-195.__IEEE VLSI Design, Automation and Test__(2011 VLSI DAT)**[B36] J. F. Chang, and**__Y. S. Lin__, "A 0.99 mW 3-10 GHz CG CMOS UWB LNA Using T-match Input Network and Self-Body-Bias Technique,"*Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT)*, HF-02, Hsinchu, Taiwan.**[B37] C. C. Wang, C. Z. Chen, and**__Y. S. Lin__, "A 3.55 mW 80 GHz CMOS Direct Injection-Locked Frequency Divider with 26.3% Locking Range Using Distributed LC Tank and Body Bias Techniques,"*Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT)*, HF-04, Hsinchu, Taiwan.**[B38] J. F. Chang, and**__Y. S. Lin__, "A 3.9 dB NF, 24.5 dB Gain 0.3~10.5 GHz Distributed Amplifier Using Dual-Inductive-Peaking Cascade Gain Cell for UWB Systems in 0.18 mm CMOS,"*Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT)*, HF-05, Hsinchu, Taiwan.**[B39] T. E. Hsu,**__Y. S. Lin__, and S. L. Huang, "A Low-Power and High-Gain K-Band Receiver Front-End in 0.18 mm RF CMOS Technology,"*Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT)*, HF-10, Hsinchu, Taiwan.**[B40] C. C. Wang, C. Z. Chen, and**__Y. S. Lin__, "A Wide-Locking-Range Divide-by-3 Injection-Locked Frequency Divider Using Differential-Injection Linear Mixers and Dual Frequency-Tuning,"*Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT)*, HF-13, Hsinchu, Taiwan.**[B41] Y. C. Chen, C. H. Wang, and**__Y. S. Lin__, "Design and Implementation of Front-End for 24 GHz Adaptive Cruise Control Radar System Application,"*Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT)*, HF-18, Hsinchu, Taiwan.**[B42] T. Y. Kuo, and**__Y. S. Lin__, "UHF 915 MHz OOK Demodulator for RFID Transponder Applications,"*Proceedings of 18TH Symposium on Nano Device Technology (2011 SNDT)*, HF-26, Hsinchu, Taiwan.**[B43] Y. H. Chen***,*Y. R. Chen, J. C. Liu, J. W. Lin, K. H. Hung, C. Y. Hsu,__Y. S. Lin__, "Enhancement Performance of Amorphous SiGe Single Junction Solar Cells by Post-deposition Thermal Annealing to Overcome S-curve Character,"*TACT 2011 International Thin Films Conference*, Nov. 20-23, Kenting, Taiwan.

**[2010]**

**[B44] C. C. Chen,**__Y. S. Lin__, P. L. Huang, J. F. Chang, and S. S. Lu, "A 4.9-dB NF 53.5-62-GHz Micro-machined CMOS Wideband LNA with Small Group-Delay-Variation,"*Proceedings of 2010*, Anaheim, California, USA, pp. 489-492__IEEE International Microwave Symposium__(2010 IEEE IMS)*.***[B45] C. C. Chen, J. H. Lee, and**__Y. S. Lin__, "A 60 GHz CMOS Receiver Front-End with Integrated 180o Out-of-Phase Wilkinson Power Divider,"*Proceedings of 2010*, Anaheim, California, USA, pp. 373-376__IEEE Radio Frequency Integrated Circuits Symposium__(2010 IEEE RFIC Symposium)*.***[B46] Y. T. Chiu,**__Y. S. Lin__, and J. F. Chang, "A 18.85 mW 20-29 GHz Wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB Gain,"*Proceedings of 2010*, Anaheim, California, USA, pp. 381-384__IEEE Radio Frequency Integrated Circuits Symposium__(2010 IEEE RFIC Symposium)*.***[B47] J. G. Chen, C. C. Chen, and**__Y. S. Lin__, "An OOK Transmitter for Bio-Sensor WSN Application,"*Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT)*, pp. 76, Hsinchu, Taiwan.**[B48] C. C. Chen,**__Y. S. Lin__, and G. W. Huang, "A Low Power and High Gain 21 GHz Receiver Front-End in 0.18 mm RF CMOS Technology,"*Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT)*, pp. 78, Hsinchu, Taiwan.**[B49] C. Z. Chen, W. L. Hsu,**__Y. S. Lin__, and G. W. Huang, "Q-Band Divide-by-3 Direct Injection-Locked Frequency Divider in CMOS 0.13-mm Technology,"*Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT)*, HF-08, Hsinchu, Taiwan.**[B50] C. Z. Chen, C. C. Wang,**__Y. S. Lin__, and G. W. Huang, "1 V Ka-Band Low-Power and Wide-Locking Range CMOS Divide-by-4 Direct Injection- Locked Frequency Dividers,"*Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT)*, HF-16, Hsinchu, Taiwan.**[B51] S. L. Hwang, C. C. Chen,**__Y. S. Lin__, and G. W. Hwang, "A 21-29 GHz CMOS Wideband LNA with 3.2-4.5 dB Noise Figure Using Standard 0.13 mm Technology,"*Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT)*, HF-02, Hsinchu, Taiwan.**[B52] C. C. Wang, C. Z. Chen,**__Y. S. Lin__, and G. W. Huang, "A Ka-Band Low-Voltage and Wide-Locking Range CMOS Divide-by-4 Direct Injection-Locked Frequency Dividers in CMOS 0.18-mm Technology,"*Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT)*, pp. 41, Hsinchu, Taiwan.**[B53] C. H. Wang, Y. T. Chiu, and**__Y. S. Lin__, "A 3.2 dB NF 21-29 GHz Wideband LNA Using Current-Reuse technique,"*Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT)*, HF-03, Hsinchu, Taiwan.**[B54] C. H. Wang, H. Y. Yang, C. C. Chen, and**__Y. S. Lin__, "Application of RF Receiver Front-End for 24 GHz Short-Range Radar System,"*Proceedings of 17TH Symposium on Nano Device Technology (2010 SNDT)*, HF-17, Hsinchu, Taiwan.

**[2009]**

**[B55] W. L. Hsu, C. Z. Chen,**__Y. S. Lin__, and C. C. Chen, "A 2 mW, 55.8-GHz CMOS Injection-Locked Frequency Divider with 7.1-GHz Locking Range,"*Proceedings of 2009*, San Diego, California, USA, pp. 582-585__IEEE Radio and Wireless Symposium__(2009 IEEE RWS)*.***[B56] C. C. Chen, H. Y. Yang, and**__Y. S. Lin__, "A 21-27 GHz CMOS Wideband LNA with 9.3±1.3 dB Gain and 103.9±8.1 ps Group-Delay Using Standard 0.18 μm CMOS Technology,"*Proceedings of 2009*, San Diego, California, USA, pp. 586-589__IEEE Radio and Wireless Symposium__(2009 IEEE RWS)*.***[B57]**__Y. S. Lin__, T. H. Chang, C. Z. Chen, C. C. Chen, H. Y. Yang, and S. S. Wong, "Low-Power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz Dual-Conversion Receiver,"*Proceedings of 2009*, Hsin-Chu, Taiwan, pp. 88-91.__IEEE VLSI Design, Automation and Test__(2009 VLSI DAT)**[B58] C. W. Tsou, C. C. Chen, and**__Y. S. Lin__, "A 57-GHz CMOS VCO with 56% Tuning-Range Enhancement Using Tunable Capacitive Source- Degeneration Technique,"*Proceedings of 2009*, Hsin-Chu, Taiwan, pp. 146-149__IEEE VLSI Design, Automation and Test__(2009 VLSI DAT)*.***[B59] M. C. Lu, J. F. Chang, L. C. Lu, and**__Y. S. Lin__, "Miniature 60-GHz-Band Bandpass Filter with 2.55-dB Insertion-Loss Using Standard 0.13 mm CMOS Technology,"*Proceedings of 2009*, Hsin-Chu, Taiwan, pp. 92-95__IEEE VLSI Design, Automation and Test__(2009 VLSI DAT)*.***[B60] J. F. Chang,**__Y. S. Lin__, P. L. Huang, and S. S. Lu, "A Micromachined V-Band CMOS Bandpass Filter with 2-dB Insertion-Loss Department,"*Proceedings of 2009*, San Diego, California, USA, pp. 1590-1593__IEEE Electronic Components and Technology Conference__(2009 IEEE ECTC)*.***[B61] W. L. Hsu, C. Z. Chen,**__Y. S. Lin__, and J. F. Chang, "A 9.3-GHz-Tuning-Range, 58-GHz CMOS Direct Injection-Locked Frequency Divider Using Input-Power-Matching Technique,"*Proceedings of 2009*, San Diego, California, USA, pp. 1846-1849__IEEE Electronic Components and Technology Conference__(2009 IEEE ECTC)*.***[B62] M. C. Lu, J. F. Chang, L. C. Lu, and**__Y. S. Lin__, "1.75-dB Insertion-Loss UWB BP-Filter with Finite Transmission Zeros Using Standard 0.18 μm CMOS Technology,"*Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT)*, Hsinchu, Taiwan.**[B63] Y. T. Chiu, J. F. Chang, and**__Y. S. Lin__, "X-Band Low Noise Amplifier using 0.18 μm CMOS Technology,"*Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT)*, Hsinchu, Taiwan.**[B64] C. Z. Chen, T. Y. Chen,**__Y. S. Lin__, and G. W. Huang, "A Low-Power Excellent Sensitivity 64.76 GHz CMOS Injection-Locked Frequency Divider Using Shunt-Peaking Technique,"*Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT)*, Hsinchu, Taiwan.**[B65] A. C. Hsu, C. C. Chen, and**__Y. S. Lin__, "A 24 GHz Down Conversion Mixer Using 0.18 mm CMOS Technology,"*Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT)*, Hsinchu, Taiwan.**[B66] C. W. Tsou, C. C. Chen, and**__Y. S. Lin__, "An Ultra Wideband Double-Balanced Mixer in 0.13 mm RF CMOS Technology,"*Proceedings of 16TH Symposium on Nano Device Technology (2009 SNDT)*, Hsinchu, Taiwan.**[B67] H. C. Chung, C. C. Chen, and Y. S. Lin, "0.18 m CMOS UWB LNA with high gain and 3.5-4.7 dB noise figure",***Proceedings of 16TH Symposium on**Nano Device Technology (2009 SNDT)*, Hsinchu, Taiwan.

**[2008]**

**[B68] J. F. Chang,**__Y. S. Lin__, C. C. Chen, C. Z. Chen, T. Wang, and S. S. Lu, "A Miniature Micro-machined Millimeter-wave Bandpass Filter By CMOS Compatible ICP Deep-Trench Technology,"*Proceedings of 2008*, Orlando, Florida, USA, pp. 399-402__IEEE Radio and Wireless Symposium__(2008 IEEE RWS)*.***[B69] A. Chen, H. B. Liang, Y. Baeyens, Y. K. Chen, and**__Y. S. Lin__, "A Broadband Millimeter-Wave Low-Noise Amplifier in SiGe BiCMOS,"*Proceedings of 2008*, Orlando, Florida, USA, pp. 86-89.__IEEE Si Monolithic Integrated Circuits in RF Systems__**[B70] J. H. Lee, C. C. Chen, H. Y. Yang, and**__Y. S. Lin__, "A 2.5-dB NF 3.1-10.6-GHz CMOS UWB LNA with Small Group-Delay-Variation,"*Proceedings of 2008*, Atlanta, Georgia, USA__IEEE Radio Frequency Integrated Circuits Symposium__(2008 IEEE RFIC Symposium)*.*, 501-504*.***[B71] A. Chen, H. B. Liang, Y. Baeyens, J. Lin, Y. K. Chen, and**__Y. S. Lin__, "Wideband Mixed Lumped-distributed-element 90° and 180° Power Splitters on Silicon Substrate for Millimeter-wave Applications,"*Proceedings of 2008*, Atlanta, Georgia, USA, pp. 449-452.__IEEE Radio Frequency Integrated Circuits Symposium__(2008 IEEE RFIC Symposium)**[B72] H. Y. Yang,**__Y. S. Lin__, C. C. Chen, and S. S. Wong, "A Low-Power V-Band CMOS Low-Noise Amplifier Using Current-Sharing Technique,"*Proceedings of 2008*, Seattle, Washington, USA, pp. 964-967__IEEE International Symposium on Circuits and Systems__(2008 IEEE ISCAS)*.***[B73] P. K. Tsai, T. H. Huang, and Y. S. Lin, "Integration of CMOS VCO and frequency divider for ku-band low-power frequency synthesizer,"***3rd International Conf. on Innovative Computing, Information and Control (ICICIC2008)*, Dalian, China, Jun. 2008, pp. 235-238.**[B74] C. C. Hsiao, C. Z. Chen, and**__Y. S. Lin__, "A Low-Power CDR for Wireless Sensor Network Applications",*Proceedings of 2008 RFID Conference*, Taipei, Taiwan.**[B75] C. C. Chen, Y. H. Chou,**__Y. S. Lin__, and J. G. Chen, "A CMOS OOK Transceiver for RFID Applications",*Proceedings of 2008 RFID Conference*, Taipei, Taiwan.**[B76] W. L. Hsu, C. Z. Chen, and**__Y. S. Lin__, "A Ka-band Injection-Locked Frequency Divider Using Shunt-Peaking Technique,"*Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT)*, Hsinchu, Taiwan.**[B77] F. C. Chang, C. Z. Chen, and**__Y. S. Lin__, "Ka band Wide Locked Range Frequency Divider,"*Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT)*, Hsinchu, Taiwan.**[B78] C. C. Hsiao, C. Z. Chen, and**__Y. S. Lin__, "A Low Data Rate CDR for bio-sensor receiver application,"*Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT)*, Hsinchu, Taiwan.**[B79] T. H. Chang, C. Z. Chen, and**__Y. S. Lin__, "On the use of inversion-mode MOS Varactors for Ka band VCO,"*Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT)*, Hsinchu, Taiwan.**[B80] J. H. Lee, C. C. Chen,**__Y. S. Lin__, T. Wang, and S. S. Lu, "A 5.8GHz Fully Integrated Low-Phase-Noise CMOS VCO,"*Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT)*, Hsinchu, Taiwan.**[B81] J. H. Lee, C. C. Chen, and**__Y. S. Lin__, "A High-Performance Wideband CMOS Low-Noise Amplifier Using Inductive Series and Parallel Peaking Techniques,"*Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT)*, Hsinchu, Taiwan.**[B82] C. C. Chen,**__Y. S. Lin__, J. F. Chang, and J. H. Lee, "A K-Band Low-Noise Amplifier Using Shunt RC-Feedback and Series Inductive-Peaking Techniques,"*Proceedings of 15TH Symposium on Nano Device Technology (2008 SNDT)*, Hsinchu, Taiwan.**[B83] P. K. Tsai, T. H. Huang, and**__Y. S. Lin__, "Integration of CMOS VCO and Frequency Divider for Ku-band Low-Power Frequency Synthesizer,"*The Third International Conference on Innovative Computing, Information and Control*, Dalian, China.

**[2007]**

**[B84] C. Z. Chen, J. H. Lee, C. C. Chen, and**__Y. S. Lin__, "An Excellent Phase-Linearity 3.1-10.6 GHz CMOS UWB LNA Using Standard 0.18 mm CMOS Technology,"*Proceedings of 2008*, Bangkok, Thailand, pp. 1-4.__IEEE Asia-Pacific Microwave Conference__**[B85] J. F. Chang,**__Y. S. Lin__, C. Z. Chen, C. C. Chen, P. F. Yeh, P. L. Huang, T. Wang, and S. S. Lu, "Ultra-Low-Loss and Broadband Micromachined Inductors and Transformers for 30-100 GHz CMOS RFIC Applications by CMOS-Compatible ICP Deep Trench Technology,"*Proceedings of 2007*, Long Beach, California, USA, pp. 225-228.__IEEE Radio and Wireless Symposium__(2007 IEEE RWS)**[B86]**__Y. S. Lin__, C. C. Chen, C. Z. Chen, and P. F. Yeh, "High-Coupling and Ultra-Low-Loss Interlaced Stacked Transformers for 60-100 GHz CMOS RFIC Applications,"*Proceedings of 2007*, Long Beach, California, USA, pp. 357-360.__IEEE Radio and Wireless Symposium__(2007 IEEE RWS)**[B87] Y. H. Tsou, C. Z. Chen,**__Y. S. Lin__, and G. W. Huang, "A CPGS Inductor for RFIC Applications,"*Proceedings of**2007*__Symposium on Nano Device Technology__, Hsin-chu, Taiwan.__(SNDT)__**[B88] H. Y. Fang, C. Z. Chen,**__Y. S. Lin__, and G. W. Huang, "A 5GHz Fully Integrated Low Power CMOS VCO,"*Proceedings of 2007*, Hsin-chu, Taiwan.__Symposium on Nano Device Technology____(SNDT)__**[B89] Y. C. Lin, C. Z. Chen,**__Y. S. Lin__, and G. W. Huang, "A study of Intra-Body Signal Transmission For Instantaneous Health-Monitor-System Applications,"*Proceedings of 2007*, Hsin-chu, Taiwan.__Symposium on Nano Device Technology____(SNDT)__**[B90] P. K. Tsai, C. Z. Chen,**__Y. S. Lin__, and G. W. Huang, "Ku-band Voltage-Controlled Oscillator and Injection-Locked Frequency Divider for Frequency Synthesizer Application,"*Proceedings of 2007*, Hsin-chu, Taiwan.__Symposium on Nano Device Technology____(SNDT)__**[B91] J. H. Lee, C. C. Chen, C. Z. Chen,**__Y. S. Lin__, and G. W. Huang, "A 3.1-10.6-GHz Ultra-Wideband CMOS Low-Noise Amplifier Utilizing Inductive Series And Shunt Peaking Techniques,"*Proceedings of 2007*, Hsin-chu, Taiwan.__Symposium on Nano Device Technology____(SNDT)__

**[2006]**

**[B92] S. H. Yen**__Y. S. Lin__, and C. C. Chen, "A Ka-Band Low Noise Amplifier Using Standard 0.18 mm CMOS Technology for Ka-Bnad Communication System Applications,"*Proceedings of 2006*, Yokohama, Japan, pp. 317-319.__IEEE Asia-Pacific Microwave Conference__(2006 IEEE APMC)**[B93]**__Y. S. Lin__, C. C. Chen, H. B. Liang, T. Wang, and S. S. Lu, "An Ultra-Low-Loss Micromachined RF Monolithic Transformer with Partial Pattern Ground Shields (PPGS) for UWB RFIC Applications,"*Proceedings of 2006*, Yokohama, Japan, pp. 1421-1424.__IEEE Asia-Pacific Microwave Conference__(2006 IEEE APMC)**[B94]**__Y. S. Lin__, C. C. Chen, H. B. Liang, T. Wang, and S. S. Lu, "High-Quality-Factor and Low-Power-Loss Micromachined RF Bifilar Transformer for UWB RFIC Applications,"*Proceedings of 2006*, Yokohama, Japan, pp. 798-799.__International Solid-State Devices and Materials____Conference__(2006 SSDM)**[B95]**__Y. S. Lin__, C. C. Chen, Y. R. Tzeng, and H. B. Liang , "An Analysis of Layout and Temperature Effects on Magnetic-Coupling Factor, Resistive- Coupling Factor, and Power Gain Performances of RF Transformers for RFIC Applications,"*Proceedings of 2006*, Yokohama, Japan, pp. 522-523.__International Solid-State Devices and Materials Conference__(2006 SSDM)**[B96]**__Y. S. Lin__, Z. H. Yang, C. C. Chen, and T. C. Chao, "Design and Implementation of a Miniaturized +8 dBm IIP3 3-5 GHz UWB CMOS LNA,"*Proceedings of 2007*, Kaohsiung county, Taiwan, pp.127.__National Communication Conference__**[B97]**__Y. S. Lin__, C. C. Chen, H. B. Liang, and M. S. Huang, "Analyses and Wideband Modeling (DC-to- 50GHz) of Various Dummy Devices For Accurate RF Devices and ICs De-embedding Applications,"*Proceedings of 2007*, Kaohsiung county, Taiwan, pp.261.__National Communication Conference__**[B98] H. B. Liang,**__Y. S. Lin__, C. C. Chen, and J. H. Lee, "Optimization of PGS Pattern of Transformers/Inductors in Standard RF BiCMOS Technology for RFIC Applications,"*Proceedings of 2006*, San Francisco, USA, pp. 11-14.__IEEE Radio Frequency Integrated Circuits Symposium__(2006 IEEE RFIC Symposium)**[B99]**__Y. S. Lin__, H. B. Liang, T. Wang, and S. S. Lu, "An Analysis of Perfect-Magnetic-Coupling Ultra-Low-Loss Micromachined SMIS RF Transformers for RFIC Applications,"*Proceedings of 2006*, pp. 55-58, San Diego, USA.__IEEE Radio and Wireless Symposium__(2006 IEEE RWS)**[B100]**__Y. S. Lin__, and S. C. Chen, and S. B. Chang, "Analysis and Design of LNA and VCO With Transformer Feedback Loop,"*Proceedings of 2006*, Hsin-chu, Taiwan, pp. 299-300.__IEEE____International Symposium on VLSI Design, Automation, and Test__(VLSI-DAT)**[B101] S. H. Yen, and**__Y. S. Lin__, "Design and Implementation of a DC-to-17-GHz UWB SiGe LNA with a Peaking Inductor,"*Proceedings of 2006*, Hsin-chu, Taiwan, pp. 87-88.__IEEE____International Symposium on VLSI Design, Automation, and Test__(VLSI-DAT)**[B102] W. S. Liao,**__Y. S. Lin__, T. C. Chao, C. H. Chen, and S. S. Lu, "A 1-to-12 GHz Distributed Amplifier Designed by Micromachined Inductors,"*Proceedings of**2006*__Symposium on Nano Device Technology__, p. 119, Hsin-chu, Taiwan.__(SNDT)__**[B103] S. H. Yen,**__Y. S. Lin__, and G. W. Huang, "An Ultra-Wideband (3.1 – 10.6 GHz) Matched SiGe LNA Using Multiple Feedback-Loops, Transistor’s Intrinsic Base-Collector Capacitor, and Inductive Peaking Technique,"*Proceedings of**2006*__Symposium on Nano Device Technology__, pp. 114, Hsin-chu, Taiwan.__(SNDT)__**[B104] Z. H. Yang,**__Y. S. Lin__, and Y. R. Tzeng, "A low-power 0.18 mm CMOS LNA for Ultra- Wideband Frontends,"*Proceedings of**2006*__Symposium on Nano Device Technology__, pp. 119, Hsin-chu,Taiwan.__(SNDT)__**[B105] Z. H. Yang,**__Y. S. Lin__, and Y. R. Tzeng, "Design and Implementation of a 3-5 GHz UWB CMOS LNA,"*Proceedings of 2006*, pp. 118, Hsin-chu, Taiwan.__Symposium on Nano Device Technology____(SNDT)__**[B106] P. F. Yeh,**__Y. S. Lin__, and G. W. Huang, "Single-turn Multiple-layer Interlaced Stacked (SMIS) Transformer for Millimeter Wave Application,"*Proceedings of 2006*, pp. 117, Hsin-chu, Taiwan.__Symposium on Nano Device Technology____(SNDT)__**[B107] P. F. Yeh, and**__Y. S. Lin__, "A Wide Variable Inductance Inductor for 2-4 GHz VCO Applications,"*Proceedings of 2006*, pp. 117, Hsin-chu, Taiwan.__Symposium on Nano Device Technology____(SNDT)__**[B108] M. H. Huang, and**__Y. S. Lin__, "A 3-5 GHz CMOS Ultra-Wideband Low-Noise Amplifier Using Inductive Peaking Technique,"*Proceedings of**2006*__Symposium on Nano Device Technology__, pp. 115, Hsin-chu, Taiwan.__(SNDT)__**[B109] J. F. Chang, and**__Y. S. Lin__, "Miniaturized Inductors for Millimeter Wave Applications,"*Proceedings of 2006*, pp. 120, Hsin-chu, Taiwan.__Symposium on Nano Device Technology____(SNDT)__**[B110] M. H. Huang, and**__Y. S. Lin__, "An Analysis of High-Coupling Factor Interlaced-Stacked Transformers with Various Turn Ratio for RFIC Applications,"*Proceedings of**2006*__Symposium on Nano Device Technology__, pp. 116, Hsin-chu, Taiwan.__(SNDT)__**[B111] S. B. Chang,**__Y. S. Lin__, and G. W. Huang, "Study of achievable optimized performance of variable inductance inductor with cantilever-beam,"*Proceedings of 2006*, pp. 56, Hsin-chu, Taiwan.__Symposium on Nano Device Technology____(SNDT)__

**[2005]**

**[B112]**__Y. S. Lin__, H. B. Liang, and Y. R. Tzeng, "Implementation of Perfect-Magnetic-Coupling Ultra-Low-Loss Transformer in Standard RFCMOS Technology,"*Proceedings of 2005*, pp. 435-438, Hong-Kong, China.__IEEE Electron Device and Solid-State Circuits (2005 EDSSC)__**[B113]**__Y. S. Lin__, H. B. Liang, H. W. Chiu, K. Liu, H. H. Wu, S. S. Lu, and M. S. Lin, "Wideband Modeling of Temperature and Substrate Effects in RF Inductors on Silicon for 3.1-10.6 GHz UWB System Applications,"*Proceedings of 2005*, pp. 47-50, Hong-Kong, China.__IEEE Electron Device and Solid-State Circuits (2005 EDSSC)__**[B114]**__Y. S. Lin__, H. B. Liang, J. L. Chen, K. H. Chen, and S. S. Lu, "Variable Inductance Planar Spiral Inductors and CMOS Wideband Amplifiers with Inductive Peaking,"*Proceedings of 2005*, pp. 63-66, Hong-Kong, China.__IEEE Electron Device and Solid-State Circuits (2005 EDSSC)__**[B115] Y. R. Tzeng,**__Y. S. Lin__, and H. B. Liang, "Characterization and Modeling of High-Coupling- Factor Low-Loss Stacked 3-D Transformers,"*Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS)*, pp. 44, Kaohsiung, Taiwan.**[B116]**__Y. S. Lin__, C. C. Chen, and H. B. Liang, "Temperature and Size Effects on the Performances of RF S-Parameters, and Noise and Power Parameters of GaInP-GaAs HBTs for 3.1-10.6 GHz UWB Applications,"*Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS)*, pp. 58, Kaohsiung, Taiwan.**[B117] S. H. Yen,**__Y. S. Lin__, and H. B. Liang, "An Analysis of Silicon Substrate Effects in LNA for 60 GHz WLAN Applications,"*Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS)*, pp. 34, Kaohsiung, Taiwan.**[B118]**__Y. S. Lin__, H. B. Liang, S. C. Chen, and M. S. Huang, "An Analysis of Layout on the Noise Figure and Q-factor Performances of Circular Planar Spiral Inductors,"*Proceedings of 2005 Electron Devices and Materials Symposium (2005 EDMS)*, pp. 21, Kaohsiung, Taiwan.**[B119]**__Y. S. Lin__, H. B. Liang, T. Wang, and S. S. Lu, "MEMS 3-D Stacked RF Transformers Fabricated by 0.18 mm MS/RF CMOS technology With Improved Power Loss and Noise Figure Performances,"*Solid-Stae Devices and Materials Conference**,*Kobe, Japan, pp. 606-607, 2005.**[B120]**__Y. S. Lin__, H. B. Liang, C. C. Chen, J. L. Chen, and S. S. Lu, "Small-Signal Intrinsic Base Resistance Effect on InP-InGaAs, InGaP-GaAs, and SiGe HBTs,"*Proceedings of*, Santa Barbara, California, USA, pp. 65-66, 2005.__2005 IEEE Device Research Conference__(2005 IEEE DRC)**[B121] S. S. Lu, T. Wang, and**__Y. S. Lin__, "High-performance Fully Integrated 4 GHz CMOS LC VCO in Standard 0.25-mm CMOS Technology,"*Proceedings of*The 5th Emerging Information Technology Conference (EITC 2005), Taipei, Taiwan, pp. 157-160, 2005.**[B122] H. B. Liang,**__Y. S. Lin__, and G. W. Huang, "Wide-band Modeling and an Analysis of Noise Figure of Monolithic RF Inductors on Silicon Substrate,"*Proceedings of*, Hsin-Chu, Taiwan, pp. 249-252, 2005.__2005 Symposium on Nano-Device Technology__**[B123] H. B. Liang,**__Y. S. Lin__, J. N. Yeh, G. W. Huang, and S. S. Lu, "Wide-Band Modeling of Temperature Effect on Differentially Symmetrical 4-port Transformer on Silicon,"*Proceedings of*, Hsin-Chu, Taiwan, pp. 253-256, 2005.__2005 Symposium on Nano-Device Technology__**[B124] J. L. Chen,**__Y. S. Lin__, K. H. Chen, and G. W. Huang, "An Analysis of Substrate Resistance Effects on S-Parameters, fT, fmax, and NF Performances of 0.18 mm RF MOSFETs,"*Proceedings of*, Hsin-Chu, Taiwan, pp. 245-248, 2005.__2005 Symposium on Nano-Device Technology__

**[2004]**

**[B125] K. N. Liao,**__Y. S. Lin__, and H. B. Liang, "A 2.4/5.7 GHz Concurrent Dual-Band SiGe BiCMOS LNA,"*Proceedings of*, Keelung, Taiwan, pp. 291-296, 2004.__2004 National Symposium on Telecommunications__**[B126] C. C. Chen,**__Y. S. Lin__, K. N. Liao, and W. H. Liao, "A 5 GHz Mixer for WLAN Application Using SiGe Technology,"*Proceedings of*, Keelung, Taiwan, pp. 347-350, 2004.__2004 National Symposium on Telecommunications__**[B127] K. N. Liao,**__Y. S. Lin__, and S. C. Chen, "A Low-Power and Low-Phase-Noise SiGe VCO at 5-GHz Band Frequencies,"*Proceedings of*, Keelung, Taiwan, pp. 407-410, 2004.__2004 National Symposium on Telecommunications__**[B128] H. B. Liang,**__Y. S. Lin__, J. L. Chen, and W. H. Liao, "Optimization of RF Stacked Spiral Inductors, Two-in-One Planar Inductor and Their Applications to Wireless Circuit Design,"*Proceedings of*, Keelung, Taiwan, pp. 373-378, 2004.__2004 National Symposium on Telecommunications__**[B129] K. H. Chen,**__Y. S. Lin__, J. L. Chen, and K. N. Liao, "A CMOS Wideband Amplifier with Capacitive and Inductive Peaking Technique for WLAN Applications,"*Proceedings of*, Keelung, Taiwan, pp. 214-217, 2004.__2004 National Symposium on Telecommunications__**[B130] C. C. Chen,**__Y. S. Lin__, and W. H. Liao, "The Switched Multi-Band LNA in 0.18 mm CMOS Technology,"*Proceedings of*, Keelung, Taiwan, pp. 379-384, 2004.__2004 National Symposium on Telecommunications__**[B131]**__Y. S. Lin__, C. C. Chen, S. C. Chen, and S. S. Lu, "A Miniaturized Monolithic Low Noise Amplifier for 2.4/5.2/5.7 GHz WLAN Applications Using InGaP/GaAs HBT Technology,"__2004 IEEE Asia-Pacific Conference on Advanced System Integrated Circuits (AP-ASIC 2004)__**[B132]**__Y. S. Lin__, H. B. Liang, and S. S. Lu, "An Analysis of the Bias Dependence of Scattering Parameters S11 and S22 of SiGe Heterojunction Bipolar Transistors (HBTs),"__2004 IEEE Radio Frequency Integrated Circuits Symposium__**[B133]**__Y. S. Lin__, T. Wang, and S. S. Lu, "Temperature-Dependence of Noise Figure of Monolithic RF Transformers on a Thin (20 mm) Silicon Substrate,", pp. 103-106, Atlanta, USA.__IEEE 2004 Radio and Wireless Conference__**[B134]**__Y. S. Lin__, Jien-Nan Yeh, and Si-Chang Chen, "An Analysis of Small-Signal Source-Body Resistance Effect on RF Power MOSFETs for 5-GHz Band WLAN Applications,", pp. 99-102, Atlanta, USA.__IEEE 2004 Radio and Wireless Conference__**[B135]**__Y. S. Lin__, H. B. Liang, and G. W. Huang, "Temperature Induced Substrate Effect in Monolithic RF Active and Passive Devices on Silicon,", Beijing, China, pp. 101-104.__4th International Conference on Microwave and Millimeter Wave Technology (ICMMT-2004)__**[B136]**__Y. S. Lin__, and S. H. Wu, "Temperature and Substrate Thickness Dependence of Q and NF in High-Q Broadband Spiral Inductors for CMOS RF MEMSOC Applications,", Beijing, China, pp. 105-108.__4th International Conference on Microwave and Millimeter Wave Technology (ICMMT-2004)__**[B137] K. N. Liaw, and**__Y. S. Lin__, "A Monolithic Differential VCO for 5 GHz-Band Applications using InGap/GaAs HBT Techology,", Hsin-Feng, Taiwan, pp. 11-14.__2004 Cross Strait Triple Radio & Wireless Conference (CSTRW04)__**[B138] K. N. Liaw, and**__Y. S. Lin__, "S-band/C-band Current Dual-Band LNA with 0.35 mm SiGe BiCMOS Technology,", Hsin-Feng, Taiwan, pp. 15-18.__2004 Cross Strait Triple Radio & Wireless Conference (CSTRW04)__**[B139] T. H. Lee,**__Y. S. Lin__, and G. W. Huang, "Characterization and Modeling of High-Performance Monolithic Inductors with Halo Substrate Contact Pattern Shield,", Hsinchu, Taiwan, R.O.C., pp.210-213.__2004 Symposium on Nano Devices Technology (SNDT)__**[B140] T. H. Lee, and**__Y. S. Lin__, "Study of Monolithic Symmetric Inductors on Silicon with Various Tapered Line Widths,"__2004 Symposium on Nano Devices Technology (SNDT)__**[B141] S. H. Wu, H. B. Liang, and**__Y. S. Lin__, "Area-Efficient 3D Inductors with 6μm-Thick Top Metal for RF-IC Applications,"__2004 Symposium on Nano Devices Technology (SNDT)__**[B142] K. N. Liao,**__Y. S. Lin__, and G. W. Huang, "A Comprehensive Study of Temperature (-25 ~ 175oC) Effect on 2.4/5.7 GHz Concurrent Dual-Band InGaP/GaAs LNA,"__2004 Symposium on Nano Devices Technology (SNDT)__**[B143] K. H. Chen,**__Y. S. Lin__, and J. L. Chen, "Temperature and Bias Effect of Silicon Substrate Resistance Effect in 4-T RF CMOS,"__2004 Symposium on Nano Devices Technology (SNDT)__**[B144] C. C. Chen, and**__Y. S. Lin__, "Study of Temperature Effect on an InGaP/GaAs HBT LNA suitable for 0.9/1.8/2.4 Multi-Band applications,"__2004 Symposium on Nano Devices Technology (SNDT)__

**[2003]**

**[B145] T. H. Lee and**__Y. S. Lin__, "A 3 mW Concurrent Dual-Band Low Noise Amplifier for WLAN in 0.18 mm CMOS,", Taoyuan, Taiwan, R.O.C, 2003.__National Symposium on Telecommunications__**[B146] H. B. Liang and**__Y. S. Lin__, "A 5.2 GHz Low Noise Amplifier with Substrate Thinning and Thick Gold-Plated Inductor,", Taoyuan, Taiwan, R.O.C, 2003.__National Symposium on Telecommunications__**[B147] T. H. Lee,**__Y. S. Lin__, and S. S. Lu, "Analysis and Design of CMOS Wide-BAND Amplifier With Multiple Feedback Loops,", Taoyuan, Taiwan, R.O.C., 2003.__2003 National Symposium on Telecommunications__**[B148]**__Y. S. Lin__, T. H. Lee, and H. B. Liang, "A Comprehensive Analysis of the Temperature Effects on the Scattering parameters and Gain Performances of a 100 nm RF nMOSFET,", Keelung, Taiwan, R.O.C, pp. 140-141.__2003 Electron Devices and Materials Symposium__**[B149]**__Y. S. Lin__, "An Analysis of RF Scattering Parameters, Noise and Power Performances of RF Power MOS in 0.15 mm CMOS Technology for RF SOC Applications,"__2003__, Keelung, Taiwan, R.O.C, pp. 104-105.__Electron Devices and Materials Symposium__**[B150] T. H. Lee,**__Y. S. Lin__, H. Y. Tu, D. S. Chou, and S. S. Lu, "Temperature- Dependence of DC and RF Characteristics of E-mode Ga0.51In0.49P/ In0.15Ga0.85As pHEMTs,", Keelung, Taiwan, R.O.C, 261-264.__2003 Electron Devices and Materials Symposium__**[B151]**__Y. S. Lin__, H. W. Chiu, S. H. Wu, and S. S. Lu, "Characterization and Modeling of High Q-Factor, High Resonant Frequency Spiral Inductors with 6 m thick Top-Metal for RF-IC Applications,"*Proceedings of the*, Tokyo, Japan, 2003.__Solid-Stae Devices and Materials__**[B152]**__Y. S. Lin__, H. Y. Tu, D. S. Chou, and S. S. Lu, "DC, and RF Scattering Parameters, Noise and Power Characteristics of Enhancement-Mode In0.51Ga0.49P/In0.15Ga0.85As/ GaAs Power pHEMT’s,"*Proceedings of*, pp. 223-224, San Diego, USA.__IEEE 2003 International Symposium on Compound Semiconductors__**[B153]**__Y. S. Lin__, K. N. Liao, and S. S. Lu, "Characterization and Modeling of the Anomalous Dip in Scattering Parameter S11 of InGaP/GaAs HBTs,"__Proceedings of IEEE 2003 International Symposium on Compound Semiconductors____,__pp. 209-210, San Diego, USA.**[B154]**__Y. S. Lin__, H. Y. Tu, H. W. Chiu, and S. S. Lu, "Characterization and Modeling of Size Effect on the Performances of 0.10 mm RF MOSFETs for SOC Applications,", pp. 543-546, Philadelphia, USA.__Proceedings of 2003 IEEE Radio-Frequency Integrated- Circuits__**[B155]**__Y. S. Lin__, T. H. Lee, H. B. Liang, and S. S. Lu, "Characterization and Modeling of 100 nm RF Generic CMOS and 500 nm RF Power CMOS,"*Proceedings of*, Hsin-Chu, Taiwan, R.O.C., 2003.__IEEE VLSI Technology, System and Applications__

**[2002]**

**[B156]**__Y. S. Lin__, S. S. Lu, T. H. Lee, and H. B. Liang, "Characterization and Modeling of Small-Signal Substrate Resistance Effect in RF CMOS,", Seattle, U.S.A., pp. 315-318, 2002.__IEEE Radio Frequency Integrated Circuits Symposium__**[B157]**__Y. S. Lin__, H. B. Liang, and S. S. Lu, "An Analysis of Small-Signal Gate-Drain Resistance Effect on RF Power MOSFETs for SOC Applications,", Taipei, Taiwan, R.O.C., pp. 211-214, 2002.__International Electron Devices and Materials Symposium__**[B158]**__Y. S. Lin__, C. C. Wu, C. S. Chang, R. P. Yang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "Low-leakage 0.11 mm CMOS for Low-Power RF-ICs and SRAMs Applications,", Nagoya, Japan, 2002.__Solid-State Device Meeting (SSDM)__**[B159]**__Y. S. Lin__, H. Y. Tu, and S. S. Lu, "A Comprehensive Analysis of the Kink Phenomenon in Scattering Parameter S22 and S21 of GaInP/GaAs HBTs,", Nagoya, Japan, 2002.__Solid-State Device Meeting (SSDM)__**[B160]**__Y. S. Lin__, S. S. Lu and C. C. Chen, "Characterization and Modeling of High-Output- Power Microwave Ga0.51In0.49P/InxGa1-xAs/GaAs Doped- Channel FETs,", Yuanlin, Taiwan, R.O.C.__2002 Taiwan-Japan Symposium on SQUID & Communication Electronics__**[B161]**__Y. S. Lin__and T. H. Lee, "High Performance Micro-machined Tapered Spiral Inductors with Resonant Frequency of 17 GHz,", Yuanlin, Taiwan, R.O.C.__2002 Taiwan-Japan Symposium on SQUID & Communication Electronics__**[B162]**__Y. S. Lin__, H. B. Liang, and S. S. Lu, "An Analysis of the Kink Effect of Scattering Parameter S22 in RF Power MOSFETs for System-On-Chip (SOC) Applications,", Yuanlin, Taiwan, R.O.C.__2002 Taiwan-Japan Symposium on SQUID & Communication Electronics__**[B163] T. H. Lee and**__Y. S. Lin__, "A High-Performance 5.2 GHz CMOS LNA with Novel Substrate Contact Structure and Shield Pads,", vol. II, pp.252-257, Puli, Taiwan, R.O.C.__2002 National Symposium on Telecommunications__**[B164] H. M. Hsu, J. G. Su, Y. S. Lin, M. H. Tseng, J. C. H. Lin, J. Y. C. Sun, D. Tang, T. T. Yang, T. S. Tu, L. F. Lin, "High Q Broadband Copper Spiral Inductors with Q=45 on Proton-bombarded Semi-insulating Silicon Substrate,"**, pp. 113-116, 2002.__IEEE Asia-Pacific Microwave Conference__

**[2001]**

**[B165]**__Y. S. Lin__, H. M. Hsu, T. H. Lee, and H. B. Liang, "Effects of Geometric Structure and Temperature on the Performance of Spiral Inductors,", Kaohsiung, Taiwan, pp. 475-476, 2001.__Electron Device and Material Conference__**[B166]**__Y. S. Lin__, H. T. Huang, C. C. Wu, Y. K. Leung, H. Y. Pan, T. E. Chang, W. M. Chen, J. J. Liaw, and C. H. Diaz, "On the SiO2 Based Gate-Dielectric Scaling Limit for Low-Standby Power Applications in the Context of a 0.13 mm CMOS Logic Technology,"__9TH__*International Symposium on Integrated Circuits**, Devices & Systems*, Singapore, 2001.

**[1993]-[1998]**

**[B167] S. S. Lu, and**__Y. S. Lin,__"Single-Voltage-supply Operation of GaInP/InGaAs Doped Channel FET's for Wireless Communication,", Nara, Japan, October 1998.__IEEE 25th International Symposium on Compound Semiconductors__**[B168]**__Y. S. Lin__, and S. S.Lu, "High-Power High-Speed Ga0.51In0.49P/InxGa1-xAs Doped Channel FET’s,"__9TH__, Hyannis, Massachusetts, U.S.A., 1997.*IEEE International Conference on Indium- Phosphide and Related Materials***[B169] S. S. Lu and**__Y. S. Lin__, "Fabrication and Simulation of Ga0.51In0.49P/InxGa1-xAs Doped Channel FET’s and MMIC Amplifiers Grown by GSMBE,", Colorado, U.S.A., 1997.__IEEE Device Research Conference__**[B170]**__Y. S. Lin__and S. S. Lu, "High-Breakdown-Voltage High-Speed Ga0.51In0.49P/ In0.2Ga0.8As Doped Channel FET’s Using Triple-Recessed Gate Structure,"__24TH__, San Diego, U.S.A., 1997.*IEEE International Symposium on Compound Semiconductors***[B171]**__Y. S. Lin__, Y. J. Wang, S. S. Lu and C. C. Meng, "Simulation and Fabrication of High Performance Ga0.51In0.49P/GaAs MISFET’s Grown by GSMBE,"__IEEE GaAs IC Symposium____, Orlando__, U.S.A, 1996.**[B172]**__Y. S. Lin__and S. S. Lu, "High-Frequency High-Breakdown-Voltage Ga0.51In0.49P Channel MISFET’s Grown by GSMBE,"__21TH__*International Infrared and Millimeter Waves Conference**,*Berlin, Germany, 1996.**[B173]**__Y. S. Lin__and S. S. Lu, "Study of Influence of Extrinsic Capacitances on High-Frequency Performance of Ga0.51In0.49P/GaAs MISFETs,", Sinaia, Romania, 1996.__IEEE International Semiconductor Conference__**[B174]**__Y. S. Lin__, S. S. Lu and T. P. Sun, "Ga0.51In0.49P/GaAs Differential Amplifier for High Frequency Application,"__20TH__*International Infrared and Millimeter Waves Conference**,*Orlando, U.S.A., 1995.**[B175] S. S. Lu and**__Y. S. Lin__, "High-Power Ga0.51In0.49P/GaAs Airbridge Gate MISFET Grown by GSMBE,", Sinaia, Romania, 1995.__IEEE International Semiconductor Conference__**[B176]**__Y. S. Lin__, G. Y. Wu and K. M. Hung, "Theoretical Study of Hole Tunneling Under a Transverse Magnetic Field,", 1993__Annual Meeting of R.O.C. Physical Society__

**C. Patents (專利)**

**[C1]**__Yo-Sheng Lin__, and Hsien-Tsung Liu, "Method for making Y-Shaped Multi-Fin Stacked Capacitors For Dynamic Random Access Memory Cells," US patent 006083790A.**[C2]**__Yo-Sheng Lin__, and Hsien-Tsung Liu, "Method for making Y-Shaped Multi-Fin Stacked Capacitors For Dynamic Random Access Memory Cells," ROC patent 117838 (__林佑昇__及劉賢宗，"動態隨機存取記憶體之電容"，中華民國專利，證書號數：117838).**[C3]**__Yo-Sheng Lin__, Yi-Ming Sheu, Da-Wen Lin, and Chi-Hsun Hsieh, "Planarizing Method For Fabricating Gate Electrodes," US patent 006670226.**[C4]**__Yo-Sheng Lin__, Yi-Ming Sheu, Da-Wen Lin, and Chi-Hsun Hsieh, "Planarizing Method For Fabricating Gate Electrodes," ROC patent 02315 (__林佑昇__、許義明、林大文及謝奇勳，"具有不同摻質之複晶矽層的製作方法"，中華民國專利，證書號數：02315).**[C5] Wei-Hsuan Liaw,**__Yo-Sheng Lin__, and Yan-Ru Tseng, "An Effective Method for Reducing the Loss of Semiconductor Silicon Substrate," ROC patent I255489 (廖維軒、__林佑昇__及曾彥儒，"一種有效的降低半導體矽基板損耗之方法"，中華民國專利，證書號數：I255489)。**[C6] Jin-Fa Chang, and**__Yo-Sheng Lin__, "A High-Gain Low-Noise Amplifier," ROC patent I433454 (張錦法及__林佑昇__，"高增益低雜訊放大器"，中華民國專利，證書號數：I433454)。**[C7] Jen-How Lee, and**__Yo-Sheng Lin__, "Down-Conversion Frequency Mixer Circuit," US patent 006083790A.**[C8] Chung-MIing Tsai,**__Yo-Sheng Lin__, and Wei-Chen Wen, "Balanced Frequency Mixer Circuit," US patent 8829974B2.**[C9] Jen-How Lee, and**__Yo-Sheng Lin__, "Down-Conversion Frequency Mixer Circuit," pending application of ROC patent, application number: 102118445 (李仁豪及__林佑昇__，"降頻式混頻電路"，中華民國專利申請中，申請案號：102118445).**[C10] Chung-Ming Tsai,**__Yo-Sheng Lin__, and Wei-Chen Wen, "Balanced Frequency Mixer Circuit," pending application of ROC patent, application number: 102101814 (蔡宗閔、__林佑昇__及溫韙丞，"平衡式混頻電路"，中華民國專利申請中，申請案號：102101814).**[C11]**__Yo-Sheng Lin__, and Chien-Chin Wang, "Frequency-Shift-Keying Receiver," pending application of ROC patent, application number: 102142049 (林佑昇及王建今，"頻移鍵控接收裝置"，中華民國專利申請中，申請案號：102142049).**[C12]**__Yo-Sheng Lin__, and Chien-Chin wang, "Frequency-Shift Keying Receiver," pending application of US patent (application number: 14/282333).**[C13]**__Yo-Sheng Lin__, and Wei-Chen Wen, "Balanced Up-Conversion Frequency Mixer Circuit," pending application of ROC patent, application number: 103100375 (__林佑昇__及溫韙丞，"平衡式升頻混頻電路"，中華民國專利申請中，申請案號：103100375).**[C14]**__Yo-Sheng Lin__, Run-Chi Liu, and Chia-Hsing Wu, "Ultra-Wideband Low-Noise Amplifier Circuit with Low Power Consumption," pending application of US patent (application number: 14/166919).**[C15]**__Yo-Sheng Lin__, Run-Chi Liu, and Chia-Hsing Wu, "Ultra-Wideband Low-Noise Amplifier Circuit with Low Power Consumption," pending application of ROC patent, application number: 103100375 (__林佑昇__、劉潤齊及吳家興，"超寬頻低雜訊放大器電路，"中華民國專利申請中，申請案號：103100375).**[C16]**__Yo-Sheng Lin__, and Run-Chi Liu, "High-Gain Low-Noise Amplifier," pending application of ROC patent (林佑昇及劉潤齊，"高增益低雜訊放大電路，"中華民國專利申請中，申請案號：103116827).**[C17]**__Yo-Sheng Lin__, and Chien-Chin Wang, "An Effective Way to Enhance Gain and Reduce Power of a Frequency-Shift Keying Demodulator," pending application of ROC patent, application number: 103121926 (__林佑昇__及王建今，"頻移鍵控解調裝置"，中華民國專利申請中，申請案號：103121926).**[C18]**__Yo-Sheng Lin__, and Chien-Chin Wang, "Dual-Band Voltage-Controlled Oscillator," pending application of ROC patent (__林佑昇__及王建今，"雙頻帶壓控震盪器電路，"中華民國專利申請中).**[C19]**__Yo-Sheng Lin__, and Kuo-How Li, "Low-Power and High-Conversion-Gain Wideband Down-Conversion Mixer," pending application of ROC patent (林佑昇及李國豪，"低功率高轉換增益寬頻降頻混波器，"中華民國專利申請中).**[C20]**__Yo-Sheng Lin__, and Hsin-Chen Lin, "A Design Method for Effectively Enhancing Output Power and Efficiency of Power Amplifiers," pending application of ROC patent (__林佑昇__及林欣晨，"一種有效提升功率放大器之輸出功率及效率的設計方法，"中華民國專利申請中).**[C21]**__Yo-Sheng Lin__, and Chien-Chin Wang, "Low-Loss and Miniature Balun and Dual Balun," pending application of ROC patent (__林佑昇__及王建今，"低損耗、小面積之差動至單端轉換器及雙重差動至單端轉換器，"中華民國專利申請中).**[C22]**__Yo-Sheng Lin__, and Run-Chi Liu, "Design Method of Low-Power Millimeter-Wave CMOS Double-Balanced Up-Conversion Mixer with High Conversion-Gain and Port-to-Port Isolation," pending application of US patent.**[C23]**__Yo-Sheng Lin__, and Run-Chi Liu, "Design Method of Low-Power Millimeter-Wave CMOS Double-Balanced Up-Conversion Mixer with High Conversion-Gain and Port-to-Port Isolation," pending application of ROC patent (__林佑昇__及劉潤齊，"高轉換增益及隔離度之低功率豪米波CMOS雙平衡式升頻混波器之設計方法，"中華民國專利申請中)

**D、Books or a Chapter of a Book (專書或專書專章)**

**[D1] "The Science and Engineering of Microelectronic Fabrication," by Stephen A. Campbell, Oxford University Press, USA, 2001, translated by**__Yo-Sheng Lin__, and Shey-Shi Lu (__林佑昇__及呂學士譯，"半導體製程 (Stephen A. Campbell 原著)"，台北圖書公司發行，2003年出版).**[D2]**__Yo-Sheng Lin__, and Shey-Shi Lu, "Basic Micromachining Process Modules (chapter 2 of the book: MEMS (Micro Electro Mechanical Systems) Technology and Application)", Published by Instrument Technology Research Center, National Applied Research (NAR) Laboratories, Taiwan, Jul. 2003 (__林佑昇__及呂學士著, "微機電系統技術與應用第二章：基礎微加工製程模組"，國科會精儀中心發行，2003年出版).**[D3]**__Yo-Sheng Lin__, and Shey-Shi Lu, "Micromachined Devices for Wireless Communication (chapter 7 of the book: Novel Technologies for Microwave and Millimeter-Wave Applications),"*Kluwar Academic Publishers*, 2004.**[D4]**__Yo-Sheng Lin__, and Chien-Nan Yeh, "Featured Article: Fabrication and Applications of Inductors and Transformers," Journal of Chinese Institute of Automation Engineers, vol. 4, no. 3, pp. 30-38, Sep. 2004__(____林佑昇__及葉建男，"專題文章：電感器及變壓器之研製與應用"，中華民國自動化科技學會會刊, pp. 30-38, vol. 4, no. 3, 2004年).**[D5] "Electronic Circuit Analysis and Design," third edition, by Donald A. Neamen, The McGraw Hill Companies, USA, 2006, translated by**__Yo-Sheng Lin__, Ron-Chi Yang, and Chi-Wei Liu (__林佑昇__、楊榮吉及劉致為譯(呂學士及劉深淵審閱)，"微電子學(上)&(下)(第三版)"，滄海書局發行，2007年出版).**[D6] Chi-Chen Chen,**__Yo-Sheng Lin__, and Guo-Wei Huang, "Featured Article 7: Design of a K-Band Receiver Front-End with High Isolation," Nano Communications, vol. 17, no. 2, Jun. 2010 (陳志成、__林佑昇__及黃國威，"主題文章7：應用於K頻段之高隔離度射頻接收機前端電路設計"，奈米通訊，17卷，No.2，pp. 36-41，2010年6月。**[D7]**__Yo-Sheng Lin__, Hung-Wei Chiu, and Hsiao-Bin Liang, "RFID Chip Design," Gau Lih Book Co., Ltd., 2010 (__林佑昇__、邱弘緯、梁效彬著，"RFID 晶片設計"，高立圖書公司發行，2010年出版).**[D8] Jen-How Lee, Yong-Chin Chen,**__Yo-Sheng Lin__, and Shey-Shi Lu, "A 21~27 GHz CMOS Receiver Front-End with a Novel Double-Balanced Mixer and an Integrated Balun for Automobile Radar Systems," Nano Communications, vol. 19, no. 3, Sep. 2012 (李仁豪、陳永親、__林佑昇__及呂學士，"用於汽車雷達系統的一個具有新型雙平衡式混波器並整合平衡器之21~27GHz CMOS接收機前端電路"，奈米通訊，19卷，No.3，2012年9月).**[D9]**__Yo-Sheng Lin__, "Ultra-Wideband Circuits, Systems, and Applications," Journal of Electrical and Computer Engineering, vol. 2012, Article ID 567230, 2 pages, 2012. doi:10.1155/2012/567230